Untitled
Abstract: No abstract text available
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4925BDY
2002/95/EC
Si4925BDY-T1-E3
Si4925BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches
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Si4925BDY
Si4925BDY--T1
Si4925BDY--E3
Si4925BDY-T1--E3
S-50366--Rev.
28-Feb-05
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SI4925BDY marking
Abstract: Si4925BDY Si4925BDY-T1
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches
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Si4925BDY
Si4925BDY--T1
Si4925BDY--E3
Si4925BDY-T1--E3
08-Apr-05
SI4925BDY marking
Si4925BDY-T1
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Untitled
Abstract: No abstract text available
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches
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Si4925BDY
Si4925BDY--T1
Si4925BDY--E3
Si4925BDY-T1--E3
18-Jul-08
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70105
Abstract: Si4925BDY
Text: SPICE Device Model Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4925BDY
18-Jul-08
70105
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Si4925BDY-T1-GE3
Abstract: Si4925BDY Si4925BDY-T1-E3
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4925BDY
2002/95/EC
Si4925BDY-T1-E3
Si4925BDY-T1-GE3
11-Mar-11
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Si4925BDY-T1-GE3
Abstract: SI4925B
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4925BDY
2002/95/EC
Si4925BDY-T1-E3
Si4925BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4925B
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Untitled
Abstract: No abstract text available
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4925BDY
2002/95/EC
Si4925BDY-T1-E3
Si4925BDY-T1-GE3
11-Mar-11
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SI4925BDY-T1
Abstract: Si4925BDY Si4925BDY-T1-E3 Si4925BDY-T1-GE3
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4925BDY
2002/95/EC
Si4925BDY-T1-E3
Si4925BDY-T1-GE3
18-Jul-08
SI4925BDY-T1
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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LTC4100
Abstract: LTC4100 sample code 5 pin transistor for 12v 3 amp RDS ENCODER PC 845 MOTHERBOARD CIRCUIT diagram Si4925DY 30v P-mosfet adapter 12v 5a ADAPTER circuit AC TO DC 19v H 547 magnetic sensor
Text: LTC4100 Smart Battery Charger Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Single Chip Smart Battery Charger Controller 100% Compliant Rev. 1.1 SMBus Support Allows for Operation with or without Host SMBus Accelerator Improves SMBus Timing
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LTC4100
10-Bit
11-Bit
LTC4008
LTC4412
4100fa
LTC4100
LTC4100 sample code
5 pin transistor for 12v 3 amp
RDS ENCODER
PC 845 MOTHERBOARD CIRCUIT diagram
Si4925DY
30v P-mosfet
adapter 12v 5a
ADAPTER circuit AC TO DC 19v
H 547 magnetic sensor
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Untitled
Abstract: No abstract text available
Text: LTC4100 Smart Battery Charger Controller Features Description Single Chip Smart Battery Charger Controller n 100% Compliant Rev. 1.1 SMBus Support Allows for Operation with or without Host n SMBus Accelerator Improves SMBus Timing n Wide Output Voltage Range: 3.5V to 26V
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LTC4100
10-Bit
11-Bit
LTC4008
LTC4101
LTC4412
com/LTC4100
4100fc
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LTC4100
Abstract: AC adapter 19V LTC4100 sample code SI4925BDY marking LTC4100EG LTC4101 lithium battery charger si4925
Text: LTC4100 Smart Battery Charger Controller FEATURES DESCRIPTION n The LTC 4100 Smart Battery Charger is a single chip charging solution that dramatically simplifies construction of an SBS compliant system. The LTC4100 implements a Level 2 charger function whereby the charger can be
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LTC4100
LTC4100
LTC4008
LTC4101
LTC4412
4100fb
AC adapter 19V
LTC4100 sample code
SI4925BDY marking
LTC4100EG
LTC4101
lithium battery charger
si4925
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Untitled
Abstract: No abstract text available
Text: LTC4100 Smart Battery Charger Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION Single Chip Smart Battery Charger Controller 100% Compliant Rev. 1.1 SMBus Support Allows for Operation with or without Host SMBus Accelerator Improves SMBus Timing
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LTC4100
10-Bit
11-Bit
LTC4101
LTC4412
4100fb
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