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    SI4835D Price and Stock

    Rochester Electronics LLC SI4835DY

    P-CHANNEL MOSFET
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    DigiKey SI4835DY Bulk 1,298
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    Skyworks Solutions Inc SI4835-DEMO

    BOARD DEMO SI4831 SI4835 24-SSOP
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    DigiKey SI4835-DEMO Bulk 1
    • 1 $37.88
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    onsemi SI4835DY

    Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount - Bulk (Alt: SI4835DY)
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    Vishay Intertechnologies SI4835DDY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 84R8059)
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    Avnet Americas SI4835DDY-T1-GE3 Ammo Pack 17 Weeks, 4 Days 1
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    SI4835DDY-T1-GE3 Ammo Pack 18 Weeks, 4 Days 1
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    SI4835DDY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4835DDY-T1-GE3 3,354
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    Newark SI4835DDY-T1-GE3 Cut Tape 423 1
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    SI4835DDY-T1-GE3 Reel 2,500
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    Bristol Electronics SI4835DDY-T1-GE3 1,327
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    SI4835DDY-T1-GE3 70
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    Quest Components SI4835DDY-T1-GE3 1,061
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    TTI SI4835DDY-T1-GE3 Reel 2,500 2,500
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    TME SI4835DDY-T1-GE3 696 1
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    Avnet Asia SI4835DDY-T1-GE3 12,500 21 Weeks 2,500
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    Chip1Stop SI4835DDY-T1-GE3 2,500
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    SI4835DDY-T1-GE3 1,971
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    EBV Elektronik SI4835DDY-T1-GE3 18 Weeks 2,500
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    Vishay Intertechnologies SI4835DDY-T1-E3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4835DDY-T1-E3)
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    Avnet Americas SI4835DDY-T1-E3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4835DDY-T1-E3 7,496
    • 1 $1.18
    • 10 $0.966
    • 100 $0.751
    • 1000 $0.519
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    Newark SI4835DDY-T1-E3 Reel 2,500
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    SI4835DDY-T1-E3 Cut Tape 2,500
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    Bristol Electronics SI4835DDY-T1-E3 1,027
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    SI4835DDY-T1-E3 50
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    Quest Components SI4835DDY-T1-E3 821
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    SI4835DDY-T1-E3 4
    • 1 $0.98
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    TTI SI4835DDY-T1-E3 Reel 5,000 2,500
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    TME SI4835DDY-T1-E3 3,402 1
    • 1 $1.137
    • 10 $0.713
    • 100 $0.591
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    Avnet Asia SI4835DDY-T1-E3 21 Weeks 2,500
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    EBV Elektronik SI4835DDY-T1-E3 18 Weeks 2,500
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    Find more SI4835D price and stock on Findchips.com

    SI4835D Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4835DDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A 8-SOIC Original PDF
    SI4835DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A 8-SOIC Original PDF
    SI4835-DEMO Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO SI4831 SI4835 24-SSOP Original PDF
    SI4835DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4835DY Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si4835DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    Si4835DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4835DY-T1 Vishay Telefunken FET Transistor, P Channel, 1 VThreshold, ID ±8 A, SOP, Tape and Reel Original PDF

    SI4835D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4835BDY-T1-E3

    Abstract: Si4835DY SI4835BDY Si4835BDY-E3 Si4835BDY-T1 Si4835DY-T1 15TR13
    Text: Specification Comparison Vishay Siliconix Si4835BDY vs. Si4835DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4835BDY Replaces Si4835DY Si4835BDY-E3 (Lead (Pb)-free version) Replaces Si4835DY Si4835BDY-T1 Replaces Si4835DY-T1


    Original     		PDF Si4835BDY Si4835DY Si4835BDY-E3 Si4835BDY-T1 Si4835DY-T1 Si4835BDY-T1-E3 15TR13

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 18-Jul-08

    1232n-s

    Abstract: 1232ns Si4835DY P-Channel 30 V D-S MOSFET
    Text: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4835DY 30-Nov-98 1232n-s 1232ns P-Channel 30 V D-S MOSFET

    PC515

    Abstract: PC-515 PD500 2n7002 SFPJ-73 PR503 pc513 1U-0805 PQ501 PC511
    Text: 1 2 3 4 7 8 1 L2 PQ2 SI4835DY SO8 L3 PL503 BEAD 0805C PF500 6.5A/32VDC 1206 PD1 RLZ24D MLL34B PC500 100U 25V PR5 0.02_1% 2512 PL505 75UH . L1 ADINP S D 3 2 1 6 ADINP 25 PL500 BEAD 0805C 1 5 PD504 SFPJ-73 DC2010 L5. L4 L6 BATT 25 G CONN_JACK20 PJ500 PC1 0.1U


    Original     		PDF PL500 0805C PL503 PF500 A/32VDC RLZ24D MLL34B PC500 SI4835DY PC515 PC-515 PD500 2n7002 SFPJ-73 PR503 pc513 1U-0805 PQ501 PC511

    Si4835DDY

    Abstract: Si4835DDY-T1-GE3 Si4835BDY Si4835BDY-T1-E3 Si4835DDY-T1-E3 SI4835 Si4835BDY-T1 dsa0020630
    Text: Specification Comparison Vishay Siliconix Si4835DDY vs. Si4835BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1-E3 Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1


    Original     		PDF Si4835DDY Si4835BDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 Si4835BDY-T1-E3 Si4835BDY-T1 SI4835 dsa0020630

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    60703

    Abstract: Si4835DY
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "8.0 0.033 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4835DY S-60703--Rev. 30-Nov-98 60703

    Si4835DDY-T1-E3

    Abstract: Si4835DDY 80433
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 08-Apr-05 80433

    4835 fairchild

    Abstract: 4835 mosfet mosfet 4835 Si4835DY 4835 so-8 4835 b
    Text: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4835DY 4835 fairchild 4835 mosfet mosfet 4835 4835 so-8 4835 b

    4835 fairchild

    Abstract: 4835 mosfet Si4835DY 4835 b 19-NC
    Text: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF FDS6685 Si4835DY 4835 fairchild 4835 mosfet 4835 b 19-NC

    Si4835DDY

    Abstract: a4022 FS 0245
    Text: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4835DDY S-81937-Rev. 01-Sep-08 a4022 FS 0245

    Si4835DY

    Abstract: Si4835DY-T1
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


    Original     		PDF Si4835DY Si4835DY-T1 08-Apr-05

    Si4835DDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4835DDY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V "8.0 0.033 @ VGS = - 4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4835DY S-60703--Rev. 30-Nov-98

    Si4835DDY-T1-E3

    Abstract: Si4835DDY Si4835DDY-T1-GE3
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 11-Mar-11

    4835 fairchild

    Abstract: mosfet 4835 4835 mosfet 4835 aa CBVK741B019 F011 F63TNR F852 L86Z Si4835DY
    Text: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4835DY 4835 fairchild mosfet 4835 4835 mosfet 4835 aa CBVK741B019 F011 F63TNR F852 L86Z

    Si4835D

    Abstract: SI4835ddy S-090 Si4835DDY-T1-GE3
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si4835D S-090

    Si4835DY-T1

    Abstract: Si4835DY Si4835D
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


    Original     		PDF Si4835DY Si4835DY-T1 18-Jul-08 Si4835D

    Si4835DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4835DY 18-Jul-08

    C 4977

    Abstract: 85831 7193 c 8817 AN609 Si4835DDY 324383
    Text: Si4835DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4835DDY AN609 25-Mar-08 C 4977 85831 7193 c 8817 324383

    Si4835DY

    Abstract: v223
    Text: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4835DY S-52525Rev. 12-Dec-05 v223

    Si4835DY

    Abstract: Si4835DY-T1
    Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


    Original     		PDF Si4835DY Si4835DY-T1 S-31062--Rev. 26-May-03

    si4835ddy

    Abstract: No abstract text available
    Text: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4835DDY Si4835DDY-T1-E3 Si4835DDY-T1-GE3 11-Mar-11