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    SI4463 Price and Stock

    Silicon Laboratories Inc SI4463-C2A-GMR

    IC RF TXRX ISM<1GHZ 20QFN
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    DigiKey SI4463-C2A-GMR Digi-Reel 113,229 1
    • 1 $9.06
    • 10 $6.986
    • 100 $5.6234
    • 1000 $4.75459
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    SI4463-C2A-GMR Cut Tape 113,229 1
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    • 10 $6.986
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    SI4463-C2A-GMR Reel 112,500 2,500
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    Mouser Electronics SI4463-C2A-GMR 24,780
    • 1 $5.94
    • 10 $5.24
    • 100 $4.5
    • 1000 $4.22
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    Verical SI4463-C2A-GMR 7,500 2,500
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    SI4463-C2A-GMR 35 2
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    Arrow Electronics SI4463-C2A-GMR Cut Strips 35 19 Weeks 1
    • 1 $4.974
    • 10 $4.518
    • 100 $3.924
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    Newark SI4463-C2A-GMR Cut Tape 240 1
    • 1 $5.51
    • 10 $5.18
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    Bristol Electronics SI4463-C2A-GMR 2,500
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    Quest Components SI4463-C2A-GMR 2,000
    • 1 $9.54
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    • 1000 $4.77
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    SI4463-C2A-GMR 311
    • 1 $10.308
    • 10 $10.308
    • 100 $6.3566
    • 1000 $5.6694
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    Symmetry Electronics SI4463-C2A-GMR 1
    • 1 $4.06
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    Win Source Electronics SI4463-C2A-GMR 20,000
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    • 100 $1.4287
    • 1000 $1.1608
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    Silicon Laboratories Inc SI4463-B1B-FMR

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4463-B1B-FMR Cut Tape 46,370 1
    • 1 $9.06
    • 10 $6.986
    • 100 $5.6234
    • 1000 $4.75459
    • 10000 $4.75459
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    SI4463-B1B-FMR Digi-Reel 46,370 1
    • 1 $9.06
    • 10 $6.986
    • 100 $5.6234
    • 1000 $4.75459
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    SI4463-B1B-FMR Reel 42,500 2,500
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    • 10000 $4.0625
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    Mouser Electronics SI4463-B1B-FMR 32,682
    • 1 $4.93
    • 10 $4.69
    • 100 $4.15
    • 1000 $4.07
    • 10000 $4.02
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    Verical SI4463-B1B-FMR 31,790 2
    • 1 -
    • 10 $5.4189
    • 100 $5.4189
    • 1000 $5.4189
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    Arrow Electronics SI4463-B1B-FMR Cut Strips 31,790 12 Weeks 1
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    Newark SI4463-B1B-FMR Cut Tape 1
    • 1 $5.51
    • 10 $5.18
    • 100 $4.43
    • 1000 $4.23
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    Ameya Holding Limited SI4463-B1B-FMR 25,000
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    Win Source Electronics SI4463-B1B-FMR 52,950
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    • 100 $1.8386
    • 1000 $1.5759
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    Vishay Siliconix SI4463BDY-T1-E3

    MOSFET P-CH 20V 9.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4463BDY-T1-E3 Digi-Reel 9,575 1
    • 1 $2.32
    • 10 $1.491
    • 100 $2.32
    • 1000 $0.74633
    • 10000 $0.74633
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    SI4463BDY-T1-E3 Cut Tape 9,575 1
    • 1 $2.32
    • 10 $1.491
    • 100 $2.32
    • 1000 $0.74633
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    SI4463BDY-T1-E3 Reel 8,300 2,500
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    • 10000 $0.64525
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    RS SI4463BDY-T1-E3 Bulk 2,500
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    Bristol Electronics SI4463BDY-T1-E3 84
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    New Advantage Corporation SI4463BDY-T1-E3 2,500 1
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    • 10000 $0.7942
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    Vishay Siliconix SI4463CDY-T1-GE3

    MOSFET P-CH 20V 13.6A/49A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4463CDY-T1-GE3 Cut Tape 8,299 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
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    SI4463CDY-T1-GE3 Reel 5,000 2,500
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    • 10000 $0.38838
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    RS SI4463CDY-T1-GE3 Bulk 2,500
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    Bristol Electronics SI4463CDY-T1-GE3 2
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    Vishay Siliconix SI4463BDY-T1-GE3

    MOSFET P-CH 20V 9.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4463BDY-T1-GE3 Cut Tape 4,957 1
    • 1 $2.32
    • 10 $1.491
    • 100 $2.32
    • 1000 $0.74633
    • 10000 $0.74633
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    SI4463BDY-T1-GE3 Digi-Reel 4,957 1
    • 1 $2.32
    • 10 $1.491
    • 100 $2.32
    • 1000 $0.74633
    • 10000 $0.74633
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    SI4463 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4463-915-DK Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT DEV WIRELESS SI4463 915MHZ Original PDF
    SI4463-B0B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4463-B1B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN Original PDF
    SI4463-B1B-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN Original PDF
    SI4463BDY Vishay Siliconix MOSFETs Original PDF
    Si4463BDY-E3 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si4463BDY-T1-E3 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4463BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9.8A 8-SOIC Original PDF
    SI4463BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9.8A 8SOIC Original PDF
    SI4463-C2A-GM Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN Original PDF
    SI4463-C2A-GMR Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN Original PDF
    SI4463CDY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 2.5V SO8 Original PDF
    SI4463DY Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4463DY Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4463DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4463DY Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4463DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO-8 Scan PDF
    SI4463DY_NL Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4463DY SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4463DY-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) Rated MOSFET Original PDF

    SI4463 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NS4160

    Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original
    Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET PDF

    4463 SO8 MOSFET

    Abstract: 4463 B
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original
    Si4463DY 4463 SO8 MOSFET 4463 B PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4463DY S-51654--Rev. 21-Apr-97 PDF

    95-4066

    Abstract: 3335 9828 AN609 Si4463BDY 69005
    Text: Si4463BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si4463BDY AN609 19-Mar-07 95-4066 3335 9828 69005 PDF

    Si4463DY

    Abstract: 70707
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4463DY 18-Jul-08 70707 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463CDY www.vishay.com Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4463CDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4463BDY

    Abstract: Si4463BDY-T1-E3
    Text: New Product Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 RoHS COMPLIANT S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D


    Original
    Si4463BDY Si4463BDY-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original
    Si4463DY Si4463DY-T1 Si4463DY-T1--E3 S-50694--Rev. 18-Apr-05 PDF

    PF7000

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4463DY 08-Apr-05 PF7000 PDF

    SI4463BDY

    Abstract: No abstract text available
    Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View


    Original
    Si4463BDY Si4463BDY--E3 Si4463BDY-T1--E3 08-Apr-05 PDF

    Si4463BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4463BDY S-51095Rev. 13-Jun-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: AN648 Si4063/Si4463/64 TX M ATCHING 1. Introduction This application note describes the matching methods for the TX Power Amplifier PA on the Si4063/Si4463/64 RFICs. This document does not address the matching procedure for the PA on the Si4060/Si4460/61 RFICs. Since


    Original
    AN648 Si4063/Si4463/64 Si4060/Si4460/61 AN627: PDF

    Si4463BDY-E3

    Abstract: Si4463BDY
    Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View


    Original
    Si4463BDY Si4463BDY--E3 Si4463BDY-T1--E3 S-40433--Rev. 15-Mar-04 Si4463BDY-E3 PDF

    Si4463DY

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4463DY S-51654--Rev. 21-Apr-97 PDF

    Si4463DY

    Abstract: No abstract text available
    Text: Si4463DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 - 20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4463DY S-20117--Rev. 11-Mar-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4463CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    Si4463CDY AN609, 2128m 3734m 2265m 9306u 5449m 3002m 7639m PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4463CDY 18-Jul-08 PDF

    SI4463

    Abstract: SI4463CDY
    Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original
    Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4463 PDF

    Si4463DY

    Abstract: 52525rev Si4463DY SPICE Device Model
    Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4463DY S-52525Rev. 12-Dec-05 52525rev Si4463DY SPICE Device Model PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 - 20 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 • Halogen-free According to IEC 61249-2-21 Available


    Original
    Si4463BDY Si4463BDY-T1-E3 Si4463BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4463DY

    Abstract: Si4463DY-T1 SI4463DY-T1-E3
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original
    Si4463DY Si4463DY-T1 Si4463DY-T1--E3 18-Jul-08 SI4463DY-T1-E3 PDF

    Si4463DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4463DY 18-Jul-08 PDF

    SI4463DY-T1

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4463DY Si4463DY-T1 (with Tape and Reel)


    Original
    Si4463DY Si4463DY-T1 S-31990--Rev. 13-Oct-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original
    Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF