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    SI4412DY Price and Stock

    Vishay Intertechnologies SI4412DY

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    Bristol Electronics SI4412DY 150
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    SI4412DY 120
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    Vishay Siliconix SI4412DY

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    Quest Components SI4412DY 618
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    SI4412DY 1,040
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    Vishay Siliconix SI4412DY-T1

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    Bristol Electronics SI4412DY-T1 1,131
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    SI4412DY-T1 2,390 5
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    SI4412DY-T1 7,510
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    Quest Components SI4412DY-T1 1,738
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    SI4412DY-T1 6,000
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    SI4412DY-T1 1,912
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    SI4412DY-T1 904
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    Vishay Intertechnologies SI4412DY-T1

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    Bristol Electronics SI4412DY-T1 2,500
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    Quest Components SI4412DY-T1 1,302
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    SI4412DY-T1 2,000
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    Fairchild Semiconductor Corporation SI4412DY

    MOSFET Transistor, N-Channel, SO
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    Quest Components SI4412DY 1,912
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    SI4412DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si4412DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4412DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    Si4412DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4412DY Vishay 30-V (D-S) Single Original PDF
    Si4412DY Vishay Intertechnology N-Channel 30-V (D-S) Rated MOSFET Original PDF
    SI4412DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8 Scan PDF
    SI4412DY_NL Fairchild Semiconductor 30V Single N-Channel, Logic Level, PowerTrench MOSFET Original PDF

    SI4412DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S44176Rev.

    SI4412DY

    Abstract: No abstract text available
    Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 18-Jul-08

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S-47958--Rev. 15-Apr-96

    9959

    Abstract: SI4412DY 9a2a
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY 9959 9a2a

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY 18-Jul-08

    9959

    Abstract: No abstract text available
    Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY 9959

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Diode HER 507

    S-49534

    Abstract: Si4412DY
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY Drai50 S-49534--Rev. 06-Oct-97 S-49534

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 11-Mar-11 Diode HER 507

    SI4412DY

    Abstract: S-49534
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY 08-Apr-05 S-49534

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY

    SI4412DY-T1

    Abstract: SI4412DY-T1-E3 SI4412DY Si4412ADY Si4412ADY-T1 Si4412ADY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4412ADY vs. Si4412DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4412ADY-T1-E3 Replaces Si4412DY-T1-E3 Si4412ADY-T1 Replaces Si4412DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4412ADY Si4412DY Si4412ADY-T1-E3 Si4412DY-T1-E3 Si4412ADY-T1 Si4412DY-T1 31-Oct-06

    S-49534

    Abstract: Si4412DY
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S-49534--Rev. 06-Oct-97 S-49534

    CEP1238R0MC

    Abstract: ZENER DIODE t2d 50V 20A step down regulator T2D DIODE 49 fet alternator regulator circuit T2D DIODE FDS6680A LTC1628 LTC3707 LTC3707EGN
    Text: LTC3707 High Efficiency, 2-Phase Synchronous Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3707 is a high performance dual step-down switching regulator controller that drives N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3707 300kHz. LTC1735 16-Pin LTC1736 24-Pin LTC1929 3707f CEP1238R0MC ZENER DIODE t2d 50V 20A step down regulator T2D DIODE 49 fet alternator regulator circuit T2D DIODE FDS6680A LTC1628 LTC3707 LTC3707EGN

    THCR70E1H226ZT

    Abstract: LTC1625 LTC1775 LTC1775C LTC1775CGN LTC1775CS LTC1775I LTC1775IGN MBRS340 SUD50N03-10
    Text: LTC1775 High Power No RSENSE Current Mode Synchronous Step-Down Switching Regulator TM U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1775 is a synchronous step-down switching regulator controller that drives external N-channel power


    Original     		PDF LTC1775 LTC1625, LTC1775 150kHz LTC1702 500kHz; LTC1735 16-Pin 1775f THCR70E1H226ZT LTC1625 LTC1775C LTC1775CGN LTC1775CS LTC1775I LTC1775IGN MBRS340 SUD50N03-10

    TM 1628 28 pins

    Abstract: LTC1628IG FDS6680A LTC1628 LTC1628C LTC1628CG LTC1628I 28 pin ic TM 1628
    Text: LTC1628 High Efficiency, 2-Phase Synchronous Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1628 is a high performance dual step-down switching regulator controller that drives all N-Channel


    Original     		PDF LTC1628 300kHz. LTC1703 LTC1736 24-Pin LTC1929 1628f TM 1628 28 pins LTC1628IG FDS6680A LTC1628 LTC1628C LTC1628CG LTC1628I 28 pin ic TM 1628

    LT1438

    Abstract: rectifier diode m7 regulator ic 6562 LTC1439 CC2A m5d3 IRLML2803 LTC1438 LTC1438CG LTC1438CG-ADJ
    Text: LTC1438/LTC1439 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1438/LTC1439 are dual, synchronous stepdown switching regulator controllers which drive external


    Original     		PDF LTC1438/LTC1439 1438/LTC1439 400kHz Effic6/LTC1436-PLL/ LTC1437 16-Pin LT1510 LTC1538-AUX LTC1539 14389fa LT1438 rectifier diode m7 regulator ic 6562 LTC1439 CC2A m5d3 IRLML2803 LTC1438 LTC1438CG LTC1438CG-ADJ

    Si9730

    Abstract: No abstract text available
    Text: Product is End of Life 12/2014 Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC DESCRIPTION FEATURES The Si9730 monitors the charging and discharging of dualcell lithium-ion battery packs carbon or coke chemistry ensuring that battery capacity is fully utilized while ensuring


    Original     		PDF Si9730 Si9730 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    LTC3727

    Abstract: LTC3727E-1 FDS6680A LTC3727-1 LTC3727EG LTC3727EG-1 T2D 68 zener diode
    Text: LTC3727/LTC3727-1 High Efficiency, 2-Phase Synchronous Step-Down Switching Regulators U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 14V Out-of-Phase Controllers Reduce Required Input


    Original     		PDF LTC3727/LTC3727-1 250kHz 550kHz LTC3727 LTC3728 550kHz, LTC3731 600kHz 3727f LTC3727E-1 FDS6680A LTC3727-1 LTC3727EG LTC3727EG-1 T2D 68 zener diode

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic Si4412DY Semiconductors N-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±7.0 0.042 @ VGs = 4.5 V ±5.8 D D D D SO-8 s s s N-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si4412DY S-49534â 06-Oct-97 S2SM735 DD17flflT