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    Vishay Siliconix SI4324DY-T1-E3

    MOSFET N-CH 30V 36A 8SO
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    RS SI4324DY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4324DY-T1-GE3

    MOSFET N-CH 30V 36A 8SO
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    SI4324DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4324DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 36A 8-SOIC Original PDF
    SI4324DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 36A 8-SOIC Original PDF

    SI4324DY Datasheets Context Search

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    Si4324DY

    Abstract: Si4324DY-T1-E3
    Text: Si4324DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4324DY Si4324DY-T1-E3 Si4324DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4324DY Si4324DY-T1-E3 Si4324DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES (A)a ID rDS(on) (W) 0.0032 @ VGS = 10 V 36 0.0042 @ VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 25 5 nC 25.5 Termination


    Original     		PDF Si4324DY Si4324DY--E3 Si4324DY-T1--E3 S-50576--Rev. 04-Apr-05

    Si4324DY

    Abstract: Si4324DY-T1-E3 si4324 S-6108
    Text: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 25.5 nC APPLICATIONS


    Original     		PDF Si4324DY Si4324DY-T1-E3 S-61089-Rev. 19-Jun-06 si4324 S-6108

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 25.5 nC APPLICATIONS


    Original     		PDF Si4324DY Si4324DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 (A)a ID rDS(on) (W) 0.0032 @ VGS = 10 V 36 0.0042 @ VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 25 5 nC 25.5 APPLICATIONS


    Original     		PDF Si4324DY Si4324DY-T1--E3 S-50576--Rev. 04-Apr-05

    AN609

    Abstract: Si4324DY
    Text: Si4324DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4324DY AN609 29-Aug-05

    7334-1

    Abstract: Si4324DY
    Text: SPICE Device Model Si4324DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4324DY 18-Jul-08 7334-1

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 25.5 nC APPLICATIONS


    Original     		PDF Si4324DY Si4324DY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4324DY Si4324DY-T1-E3 Si4324DY-T1-GE3 70trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 (A)a ID rDS(on) (W) 0.0032 @ VGS = 10 V 36 0.0042 @ VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 25 5 nC 25.5 APPLICATIONS


    Original     		PDF Si4324DY Si4324DY-T1--E3 08-Apr-05

    foxconn g41

    Abstract: G781P8F foxconn bios flash header PCI8402 TPS2231 MBX 146 mbx 202 schematic kb3910 KB3910SF Foxconn MS01
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Title of Schematics Page Schematics Page Index Block Diagram Yonah(HOST BUS) 1/2


    Original     		PDF 74AHC1G08GW 1R-0000102-J200 pin81 pin176 R519/R520 1R-0000220-F200 MS60-1-05 MBX-163) foxconn g41 G781P8F foxconn bios flash header PCI8402 TPS2231 MBX 146 mbx 202 schematic kb3910 KB3910SF Foxconn MS01

    foxconn g41

    Abstract: INTEL 945 crb schematics p15sd PCI8402 foxconn circuit diagram TPS2231 PZ4782A-2743-01 mbx 202 schematic foxconn 945 crb schematics foxconn
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Page 36 37 38 39 40 41 42 43 44 45 46 47 Title of Schematics Page Rev. Date 0.20 06/5/22 DC_IN/Charger (MAX1909) SYSPWR(+3VALW/+5VALW) 0.20 06/5/22 SYSPWR(+1_5VRUN/+1_05VRUN) 0.20 06/5/22 VHCORE(ISL6262)


    Original     		PDF 74AHC1G08GW 1R-0000102-J200 pin81 pin176 R519/R520 1R-0000220-F200 MS60-1-05 MBX-163) foxconn g41 INTEL 945 crb schematics p15sd PCI8402 foxconn circuit diagram TPS2231 PZ4782A-2743-01 mbx 202 schematic foxconn 945 crb schematics foxconn

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    mbx 202 schematic

    Abstract: foxconn g41 9LPR321BKLF FCI2012F-100K KB3910SF-C1 FCI2012F-1R0K kb3910 C535C mbx 171 rev 1.0 Q13MC3061001800
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Title of Schematics Page Rev. Date 0.20 06/5/22 DC_IN/Charger (MAX1909) SYSPWR(+3VALW/+5VALW) 0.20 06/5/22 SYSPWR(+1_5VRUN/+1_05VRUN) 0.20 06/5/22 VHCORE(ISL6262) 0.20 06/5/22 Others power plan


    Original     		PDF 74AHC1G08GW 1R-0000102-J200 pin81 pin176 R519/R520 1R-0000220-F200 10Kohm 1R-0000000-J200 MS60-1-05 MBX-163) mbx 202 schematic foxconn g41 9LPR321BKLF FCI2012F-100K KB3910SF-C1 FCI2012F-1R0K kb3910 C535C mbx 171 rev 1.0 Q13MC3061001800