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    SI4178 Price and Stock

    Vishay Siliconix SI4178DY-T1-GE3

    MOSFET N-CH 30V 12A 8SO
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    DigiKey SI4178DY-T1-GE3 Cut Tape 3,487 1
    • 1 $0.58
    • 10 $0.503
    • 100 $0.58
    • 1000 $0.28191
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    SI4178DY-T1-GE3 Digi-Reel 3,487 1
    • 1 $0.58
    • 10 $0.503
    • 100 $0.58
    • 1000 $0.28191
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    SI4178DY-T1-GE3 Reel 2,500 2,500
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    RS SI4178DY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4178DY-T1-GE3 115,000 1
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    Vishay Siliconix SI4178DY-T1-E3

    MOSFET N-CH 30V 12A 8SO
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    DigiKey SI4178DY-T1-E3 Reel
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    Vishay Intertechnologies SI4178DY-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4178DY-T1-GE3)
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    Avnet Americas SI4178DY-T1-GE3 Reel 7,500 20 Weeks 2,500
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    SI4178DY-T1-GE3 Ammo Pack 113 Weeks, 5 Days 1
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    Mouser Electronics SI4178DY-T1-GE3 6,404
    • 1 $0.57
    • 10 $0.493
    • 100 $0.347
    • 1000 $0.246
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    Verical SI4178DY-T1-GE3 37,500 2,500
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    SI4178DY-T1-GE3 2,500 2,500
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    SI4178DY-T1-GE3 1,975 33
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    • 1000 $0.1811
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    Arrow Electronics SI4178DY-T1-GE3 37,500 20 Weeks 2,500
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    SI4178DY-T1-GE3 2,500 20 Weeks 2,500
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    SI4178DY-T1-GE3 Cut Strips 1,975 20 Weeks 1
    • 1 $0.37
    • 10 $0.3399
    • 100 $0.2593
    • 1000 $0.1811
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    Newark SI4178DY-T1-GE3 Cut Tape 2,500
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    SI4178DY-T1-GE3 Reel 2,500
    • 1 $0.286
    • 10 $0.286
    • 100 $0.286
    • 1000 $0.286
    • 10000 $0.258
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    Bristol Electronics SI4178DY-T1-GE3 9,651
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    SI4178DY-T1-GE3 1,965
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    Quest Components SI4178DY-T1-GE3 234
    • 1 $1.002
    • 10 $1.002
    • 100 $0.6012
    • 1000 $0.501
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    TTI SI4178DY-T1-GE3 Reel 22,500 2,500
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    • 10000 $0.183
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    TME SI4178DY-T1-GE3 2,493 1
    • 1 $0.592
    • 10 $0.592
    • 100 $0.38
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    • 10000 $0.231
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    Chip 1 Exchange SI4178DY-T1-GE3 25,946
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    Avnet Asia SI4178DY-T1-GE3 21 Weeks 2,500
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    Chip1Stop SI4178DY-T1-GE3 37,500
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    SI4178DY-T1-GE3 2,500
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    SI4178DY-T1-GE3 1,975
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    • 10 $0.3399
    • 100 $0.2593
    • 1000 $0.212
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    Component Electronics, Inc SI4178DY-T1-GE3 38
    • 1 $3.85
    • 10 $3.85
    • 100 $2.88
    • 1000 $2.5
    • 10000 $2.5
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    EBV Elektronik SI4178DY-T1-GE3 21 Weeks 2,500
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    Vishay Intertechnologies SI4178DY-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip-Germany GmbH SI4178DY-T1-E3 1,268
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    Vishay Huntington SI4178DY-T1-E3

    MOSFET N-CH 30V 12A 8SO / Trans MOSFET N-CH 30V 12A 8-Pin SO T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4178DY-T1-E3 87,100
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    • 1000 $0.218
    • 10000 $0.189
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    Find more SI4178 price and stock on Findchips.com

    SI4178 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4178DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A SO8 Original PDF
    SI4178DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC Original PDF

    SI4178 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4178DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4178DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4178DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4178DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4178DY 2002/95/EC Si4178DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si41

    Abstract: No abstract text available
    Text: SPICE Device Model Si4178DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4178DY 11-Mar-11 si41

    Si4178DY

    Abstract: 7313 AN609
    Text: Si4178DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4178DY AN609, 25-Feb-10 7313 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4178DY 2002/95/EC Si4178DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4178DY

    Abstract: SI4178DY-T1-GE3
    Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4178DY 2002/95/EC Si4178DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4178DY 2002/95/EC Si4178DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4178DY-T1-E3 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4178DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4178DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4178DY 2002/95/EC Si4178DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4178DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836