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    SI3458 Price and Stock

    Vishay Intertechnologies SI3458BDV-T1-E3

    N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI3458BDV-T1-E3)
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    Avnet Americas SI3458BDV-T1-E3 Reel 9 Weeks 3,000
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    Newark SI3458BDV-T1-E3 Cut Tape 3,000
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    Bristol Electronics SI3458BDV-T1-E3 80
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    TTI SI3458BDV-T1-E3 Reel 3,000
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    EBV Elektronik SI3458BDV-T1-E3 10 Weeks 3,000
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    Vishay Intertechnologies SI3458BDV-T1-GE3

    N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI3458BDV-T1-GE3)
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    Avnet Americas SI3458BDV-T1-GE3 Reel 3,000
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    Newark SI3458BDV-T1-GE3 Cut Tape 3,000
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    SI3458BDV-T1-GE3 Reel 3,000
    • 1 $0.405
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    • 10000 $0.366
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    TTI SI3458BDV-T1-GE3 Reel 3,000
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    TME SI3458BDV-T1-GE3 1,809 1
    • 1 $0.8
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    Chip1Stop SI3458BDV-T1-GE3 3,000
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    SI3458BDV-T1-GE3 3,000
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    SI3458BDV-T1-GE3 2,937
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    EBV Elektronik SI3458BDV-T1-GE3 14 Weeks 3,000
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    Vishay Intertechnologies SI3458BDV-T1-BE3

    N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI3458BDV-T1-BE3)
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    Avnet Americas SI3458BDV-T1-BE3 Reel 3,000
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    Newark SI3458BDV-T1-BE3 Reel 3,000
    • 1 $0.405
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    • 1000 $0.405
    • 10000 $0.366
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    SI3458BDV-T1-BE3 Cut Tape 3,000
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    Bristol Electronics SI3458BDV-T1-BE3 2,723
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    TTI SI3458BDV-T1-BE3 Reel 18,000 3,000
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    EBV Elektronik SI3458BDV-T1-BE3 10 Weeks 3,000
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    Vishay Intertechnologies SI3458BDV-T1-GE3.

    N Ch Mosfet, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W Rohs Compliant: No |Vishay SI3458BDV-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI3458BDV-T1-GE3. Reel 3,000
    • 1 $0.405
    • 10 $0.405
    • 100 $0.405
    • 1000 $0.405
    • 10000 $0.366
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    Vishay Siliconix SI3458BDV-T1-E3

    60V 4.1A 3.3W 100mohm @ 10V | Siliconix / Vishay SI3458BDV-T1-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI3458BDV-T1-E3 Bulk 3,000
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    Find more SI3458 price and stock on Findchips.com

    SI3458 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3458BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 4.1A 6-TSOP Original PDF
    SI3458BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 4.1A 6-TSOP Original PDF
    Si3458DV Vishay Intertechnology N-Channel 60-V (D-S) MOSFET Original PDF
    SI3458DV Vishay Siliconix N-Channel 60-V (D-S) MOSFET Original PDF
    Si3458DV SPICE Device Model Vishay N-Channel 60-V (D-S) MOSFET Original PDF
    SI3458DV-T1 Vishay Intertechnology N-Channel 60-V (D-S) MOSFET Original PDF
    SI3458DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 3.2A 6-TSOP Original PDF

    SI3458 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3458BDV

    Abstract: Si3458BDV-T1-E3
    Text: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS


    Original     		PDF Si3458BDV Si3458BDV-T1-E3 08-Apr-05

    Si3458DV

    Abstract: ISM15
    Text: Si3458DV New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.2 0.13 @ VGS = 4.5 V "2.8 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3458DV S-61517--Rev. 12-Apr-99 ISM15

    Si3458DV-T1

    Abstract: Si3458DV
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6


    Original     		PDF Si3458DV Si3458DV-T1 Si3458DV-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3458BDV-T1-E3

    Abstract: Si3458BDV
    Text: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS


    Original     		PDF Si3458BDV Si3458BDV-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI3458DV-T1-GE3

    Abstract: Si3458DV Si3458DV-T1-E3
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 18-Jul-08

    Si3458BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3458BDV Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3458BDV 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6


    Original     		PDF Si3458DV Si3458DV-T1 Si3458DV-T1--E3 S-50694--Rev. 18-Apr-05

    Si3458DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3458DV 18-Jul-08

    si3458dv-t1-e3

    Abstract: si3458
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3458

    Si3458DV

    Abstract: Si3458DV-T1-GE3 Si3458DV-T1-E3 siln
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 11-Mar-11 siln

    Si3458DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3458DV S-60071Rev. 23-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 11-Mar-11

    SI3458BDV-T1-GE3

    Abstract: Si3458BDV Si3458BDV-T1-E3
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 18-Jul-08

    Si3458BDV

    Abstract: Si3458BDV-T1-E3 Si3458BDV-T1-GE3
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 11-Mar-11

    SI3458BDV-T1-GE3

    Abstract: No abstract text available
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI3458BDV-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6


    Original     		PDF Si3458DV Si3458DV-T1 Si3458DV-T1--E3 18-Jul-08

    Si3458BDV

    Abstract: No abstract text available
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: Si3458DV
    Text: Si3458DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3458DV AN609 28-Mar-07

    8772 P

    Abstract: 8772 AN609 Si3458BDV
    Text: Si3458BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3458BDV AN609 29-Aug-07 8772 P 8772

    Untitled

    Abstract: No abstract text available
    Text: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/96/EC ID (A)


    Original     		PDF Si3458DV 2002/96/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 18-Jul-08

    SI3458

    Abstract: No abstract text available
    Text: - Si3458DV V IS H A Y Vishay Siliconix New Product N-Channel 60-V D-S MOSFET PRODUCT SUMMARY V d s (V) r DS(on) {&) I d (A) ± 3 .2 0 . 1 0 @ V G S = 10 V 60 0.1 3 @ V GS = 4 .5 ± 2 .8


    OCR Scan     		PDF Si3458DV SI3458

    Untitled

    Abstract: No abstract text available
    Text: _ Si3458DV VISHAY ▼ Vishay Siliconix New Product N-Channel 60-V D-S MOSFET PRODUCT SUMMARY r DS(on) (& ) I d (A ) 0 .1 0 @ V GS= 10 V ±3 .2 0.13 @ VGS = 4.5 V ±2 .8 V d s (V) 60 (1,2, 5, 6) D Q TSOP-6 Top View 1 6 2


    OCR Scan     		PDF Si3458DV S-61517â 12-Apr-99