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Vishay Siliconix SI3456CDV-T1-E3 MOSFET N-CH 30V 7.7A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3456CDV-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
Vishay Siliconix SI3456CDV-T1-GE3 MOSFET N-CH 30V 7.7A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3456CDV-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
Vishay Intertechnologies SI3456CDVT1E3 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI3456CDVT1E3		2,011			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI3456C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3456CDV-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP		Original	PDF
SI3456CDV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP		Original	PDF

SI3456C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
S-80735 Abstract: Si3456CDV Text: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3456CDV 18-Jul-08 S-80735	PDF
Untitled Abstract: No abstract text available Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si3456DDV Abstract: SI3456CDV Si3456CDV-T1-E3 Si3456CDV-T1-GE3 SI3456DDV-T1-GE3 si3456dd Text: Specification Comparison Vishay Siliconix Si3456DDV vs. Si3456CDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456DDV-T1-GE3 replaces Si3456CDV-T1-GE3 Si3456DDV-T1-E3 or Si3456DDV-T1-GE3 replaces Si3456CDV-T1-E3	Original	Si3456DDV Si3456CDV Si3456DDV-T1-GE3 Si3456CDV-T1-GE3 Si3456DDV-T1-E3 Si3456CDV-T1-E3 20-Jul-09 si3456dd	PDF
68341 Abstract: that 2159 AN609 Si3456CDV 32-1014 Text: Si3456CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3456CDV AN609 03-Jan-08 68341 that 2159 32-1014	PDF
Si3456CDV Abstract: Si3456CDV-T1-E3 Si3456CDV-T1-GE3 Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 18-Jul-08	PDF
SI3456C Abstract: No abstract text available Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3456C	PDF
Si3456CDV Abstract: Si3456CDV-T1-E3 Text: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch	Original	Si3456CDV Si3456CDV-T1-E3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 11-Mar-11	PDF
SI3456CDV Abstract: No abstract text available Text: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch	Original	Si3456CDV Si3456CDV-T1-E3 08-Apr-05	PDF
Si3456BDV Abstract: Si3456CDV Si3456BDV-T1-E3 Si3456CDV-T1-E3 Text: Specification Comparison Vishay Siliconix Si3456CDV vs. Si3456BDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456CDV-T1-E3 replaces Si3456BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si3456CDV Si3456BDV Si3456CDV-T1-E3 Si3456BDV-T1-E3 29-Feb-08	PDF
BSS138 NXP Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250 Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety	Original	OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250	PDF