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Vishay Siliconix SI3445ADV-T1-E3 MOSFET P-CH 8V 4.4A 6TSOP
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DigiKey	SI3445ADV-T1-E3	Digi-Reel			1	1 $0.72 10 $0.72 100 $0.72 1000 $0.72 10000 $0.72	Buy Now
	SI3445ADV-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3445ADV-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI3445ADV-T1-GE3 MOSFET P-CH 8V 4.4A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3445ADV-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI3445ADV-T1-E3
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Bristol Electronics	SI3445ADV-T1-E3		1,428			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI3445ADV Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3445ADV		Vishay Siliconix	MOSFETs		Original	PDF
SI3445ADV-T1-E3		Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI3445ADV-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 4.4A 6-TSOP		Original	PDF
SI3445ADV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 4.4A 6-TSOP		Original	PDF

SI3445ADV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si3445ADV Abstract: Si3445ADV-T1-E3 Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm	Original	Si3445ADV Si3445ADV-T1--E3 S-40582--Rev. 29-Mar-04 Si3445ADV-T1-E3	PDF
Untitled Abstract: No abstract text available Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC	Original	Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
AN609 Abstract: Si3445ADV Text: Si3445ADV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3445ADV AN609 19-Jan-06	PDF
Si3445ADV-T1-E3 Abstract: SI3445ADV Si3445DV Si3445DV-T1 Text: Specification Comparison Vishay Siliconix Si3445ADV vs. Si3445DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3445ADV-T1 Replaces Si3445DV-T1 Si3445ADV-T1-E3 (Lead (Pb)-free version) Replaces Si3445DV-T1-E3	Original	Si3445ADV Si3445DV Si3445ADV-T1 Si3445DV-T1 Si3445ADV-T1-E3 Si3445DV-T1-E3 06-Nov-06	PDF
Si3445ADV Abstract: Si3445ADV-T1-E3 S09-0765-Rev Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC	Original	Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 18-Jul-08 S09-0765-Rev	PDF
Untitled Abstract: No abstract text available Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm	Original	Si3445ADV Si3445ADV-T1--E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC	Original	Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm	Original	Si3445ADV Si3445ADV-T1--E3 18-Jul-08	PDF
ML1220T13RE Abstract: IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T Text: A B C D E ZZZ1 PCB 04/27 Add PCB Panel P/N for MTDAZ@ 04/27 Add PCB Panel P/N DAZ01S00100 07/09 Change PCB Panel P/N from DAZ01S00100 to DAZ01S00200 PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ MTDAZ@ ZZZ25 1 PCB FBDAZ@ 03/28 Change PCB Panel PN from DAZ01W00101 to DAZ01Q00101	Original	DAZ01S00100 DAZ01S00200 DAZ01W00101 DAZ01Q00101 DAZ01Q00102 A30DAZ@ ML1220T13RE IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T	PDF
0.1u_0603_25v7k Abstract: GL831 Sil1392 LA-4761P RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00 Text: A ZZZ1 1 B C D E LA-4761P PCB 1 DAZ06H00100 Compal Confidential KIU10-Tiger M/B Schematics Document 2 2 2009-01-13 REV:1.0 3 3 4 4 Security Classification Classification Issued Date Compal Secret Data Title Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL	Original	LA-4761P DAZ06H00100 KIU10-Tiger CustomKIU10 LA-4761P 0.1u_0603_25v7k GL831 Sil1392 RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8	PDF
TPM infineon SLB 9635 TT Abstract: LA-4241P R472 WPCT200AA0WG KB926QFA1 WPCT ESFC G990P11U kb926 ICS9LPRS387 Text: A B C ZZZ1 ZZZ3 ZZZ4 ZZZ5 ZZZ6 PJP1 PJP1 PCB LA-4241P LS-4243P LS-4244P LS-4249P 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ 14WDAZ@ 14WDA@ 14WDA@ 14WDA@ 14WDA@ D E 1 1 ZZZ2 ZZZ8 ZZZ9 ZZZ10 ZZZ11 ZZZ12 ZZZ13 PCB LA-4241P LS-4242P LS-4243P LS-4244P LS-4245P LS-4246P	Original	14WDAZ@ LA-4241P 14WDA@ LS-4243P LS-4244P LS-4249P ZZZ10 TPM infineon SLB 9635 TT LA-4241P R472 WPCT200AA0WG KB926QFA1 WPCT ESFC G990P11U kb926 ICS9LPRS387	PDF
IFL90 Abstract: G993P1UF LA-3541P LS-354JP ML1220T13RE A3541 ISL6251 FBMA-L11-201209-221LMA30T Cypress touch intel DG 31 crb Text: A B C D E 1 1 Compal Confidential KFW10 Schematics Document 2 2 Intel Merom Processor with Crestline + DDRII + ICH8M With nVIDIA MXM/B 2008-08-25 REV: 2.0 ZZZ12 3 3 PCB 1@ UMA ZZZ1 ZZZ2 ZZZ3 ZZZ4 ZZZ5 PCB PCB PCB PCB PCB FBDAZ@ LA-3541P FBDAZ@ FBDAZ@ LS-3546P	Original	KFW10 ZZZ12 LA-3541P ZZZ13 LS-3546P LS-354DP LS-354EP LS-354GP ZZZ10 ZZZ11 IFL90 G993P1UF LA-3541P LS-354JP ML1220T13RE A3541 ISL6251 FBMA-L11-201209-221LMA30T Cypress touch intel DG 31 crb	PDF
BLM15AG121SN1D Abstract: 0.1u_0603_25v7k KB926QFA1 KB926 X5H027000FG1H mic cr6 100 3p3 LBMA46 LS-4501P RLS4148LL34 SST25LF080A_SO8-200mil Text: A B C D E 1 1 Compal Confidential KIU00 LA-4501P M/B Schematics Document 2 2 2008-08-20 REV:1.0 3 3 4 4 Compal Secret Data Security Classification 2008/05/30 Issued Date 2011/05/30 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL	Original	KIU00 LA-4501P ELECTRONIR75 BLM15AG121SN1D 0.1u_0603_25v7k KB926QFA1 KB926 X5H027000FG1H mic cr6 100 3p3 LBMA46 LS-4501P RLS4148LL34 SST25LF080A_SO8-200mil	PDF