Untitled
Abstract: No abstract text available
Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Original
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Si3403DV
2002/95/EC
Si3403DV-T1-E3
Si3403DV-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC
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Original
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Si3403DV
Si3403DV-T1-E3
08-Apr-05
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PDF
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74404
Abstract: Si3403DV-T1-E3 SI3403DV
Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Original
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Si3403DV
2002/95/EC
Si3403DV-T1-E3
Si3403DV-T1-GE3
18-Jul-08
74404
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PDF
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marking code AE
Abstract: No abstract text available
Text: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC
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Original
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Si3403DV
Si3403DV-T1-E3
18-Jul-08
marking code AE
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PDF
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74657
Abstract: AN609 613812
Text: Si3403DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si3403DV
AN609
04-May-07
74657
613812
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Original
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Si3403DV
2002/95/EC
Si3403DV-T1-E3
Si3403DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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74404
Abstract: si3403
Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Original
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Si3403DV
2002/95/EC
Si3403DV-T1-E3
Si3403DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
74404
si3403
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PDF
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