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    SI2331DS Price and Stock

    Vishay Siliconix SI2331DS-T1-E3

    MOSFET P-CH 12V 3.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2331DS-T1-E3 Reel 3,000
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    • 10000 $0.25998
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    Vishay Siliconix SI2331DS-T1-GE3

    MOSFET P-CH 12V 3.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2331DS-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.25998
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    SI2331DS Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2331DS Vishay Siliconix MOSFETs Original PDF
    SI2331DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si2331DS SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI2331DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3 Original PDF
    SI2331DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3 Original PDF

    SI2331DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2331DS

    Abstract: No abstract text available
    Text: Si2331DS Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • TrenchFET Power MOSFETS Pb-free APPLICATIONS


    Original     		PDF Si2331DS O-236 OT-23) Si2331DS-T1 Si2331DS-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS


    Original     		PDF Si2331DS O-236 OT-23) Si2331DS-T1-E3 Si2331DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si2331DS

    Abstract: E1 marking 7215-2 E1 marking code 72152
    Text: Si2331DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.048 @ VGS = - 4.5 V - 3.6 0.062 @ VGS = - 2.5 V - 3.2 0.090 @ VGS = - 1.8 V - 2.7 APPLICATIONS D Load Switch


    Original     		PDF Si2331DS O-236 OT-23) Si2331DS-T1 70ulse S-03594--Rev. 31-Mar-03 E1 marking 7215-2 E1 marking code 72152

    74289

    Abstract: SI2333DS-T1-E3 Si2333DS Si2331DS Si2333DS-T1
    Text: Specification Comparison Vishay Siliconix Si2333DS vs. Si2331DS Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SOT-23 Identical Part Number Replacements Si2333DS-T1-E3 Replaces Si2331DS-T1-E3 Si2333DS-T1 Replaces Si2331DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si2333DS Si2331DS OT-23 Si2333DS-T1-E3 Si2331DS-T1-E3 Si2333DS-T1 Si2331DS-T1 31-Oct-06 74289

    Si2331DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2331DS 23-May-03

    AN609

    Abstract: Si2331DS 29121 74655 20535-5
    Text: Si2331DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2331DS AN609 04-May-07 29121 74655 20535-5

    Si2331DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2331DS S-50383Rev. 21-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS


    Original     		PDF Si2331DS O-236 OT-23) Si2331DS-T1-E3 Si2331DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2331DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.048 @ VGS = - 4.5 V - 3.6 0.062 @ VGS = - 2.5 V - 3.2 0.090 @ VGS = - 1.8 V - 2.7 APPLICATIONS D Load Switch


    Original     		PDF Si2331DS O-236 OT-23) Si2331DS-T1 08-Apr-05

    72307

    Abstract: Si2331DS
    Text: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2331DS 30-Apr-04 72307

    Si2331DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2331DS 18-Jul-08

    Si2331DS

    Abstract: No abstract text available
    Text: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS


    Original     		PDF Si2331DS O-236 OT-23) Si2331DS-T1-E3 Si2331DS-T1-GE3 18-Jul-08

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent