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    SI191 Price and Stock

    Vishay Siliconix SI1913DH-T1-E3

    MOSFET 2P-CH 20V 0.88A SC70-6
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    Vishay Siliconix SI1912EDH-T1-E3

    MOSFET 2N-CH 20V 1.13A SC70-6
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    RS SI1912EDH-T1-E3 Bulk 3,000
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    Quest Components SI1912EDH-T1-E3 12
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    ES Components SI1912EDH-T1-E3
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    Vishay Siliconix SI1917EDH-T1-E3

    MOSFET 2P-CH 12V 1A SC70-6
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    Vishay Siliconix SI1913EDH-T1-E3

    MOSFET 2P-CH 20V 0.88A SC70-6
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    Alliance Sensors Group GHSI-19-100-A-02-20-S

    SENSOR LINEAR 101.6MM CONNECTOR
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    DigiKey GHSI-19-100-A-02-20-S Tube 1
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    SI191 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si1912EDH Vishay Intertechnology N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF
    SI1912EDH Vishay Siliconix MOSFETs Original PDF
    Si1912EDH SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF
    SI1912EDH-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.13A SC70-6 Original PDF
    SI1913DH Vishay Siliconix MOSFETs Original PDF
    Si1913DH SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI1913DH-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6 Original PDF
    Si1913EDH Vishay Intertechnology Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI1913EDH Vishay Siliconix MOSFETs Original PDF
    Si1913EDH SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI1913EDH-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6 Original PDF
    Si1917EDH Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET with Copper Leadframe Original PDF
    SI1917EDH Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    Si1917EDH SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI1917EDH-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 1A SC70-6 Original PDF

    SI191 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI1912EDH-T1-E3

    Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA"
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original
    PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191lectual 18-Jul-08 SI1912EDH-T1-E3 Si1912EDH-T1-GE3 "MARKING CODE CA"

    Si1917EDH

    Abstract: si1917edh-t1-e3 marking code 3K
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1917EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 si1917edh-t1-e3 marking code 3K

    Si1917EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1917EDH Dual P-Channel 12-V D-S MOSFET with Copper Leadframe Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original
    PDF Si1917EDH

    S101-05

    Abstract: AN816 SI1912EDH-T1
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original
    PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC S101-05 AN816 SI1912EDH-T1

    Untitled

    Abstract: No abstract text available
    Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si1913EDH

    Abstract: No abstract text available
    Text: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS


    Original
    PDF Si1913EDH SC-70 OT-363 SC-70 18-Jul-08

    Si1912EDH

    Abstract: s0317
    Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original
    PDF Si1912EDH SC-70 OT-363 SC-70 18-Jul-08 s0317

    71492

    Abstract: Si1913EDH
    Text: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1913EDH 14-Feb-01 71492

    Si1913EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1913EDH S-51866Rev. 12-Sep-05

    Si1912EDH

    Abstract: Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original
    PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191 11-Mar-11 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1

    Si1913EDH-T1-E3

    Abstract: 3K MARKING CODE Si1913EDH
    Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1913EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 Si1913EDH-T1-E3 3K MARKING CODE

    Si1913EDH

    Abstract: No abstract text available
    Text: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS


    Original
    PDF Si1913EDH SC-70 OT-363 SC-70 S-03175--Rev. 05-Mar-01

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    marking WE SC70-6

    Abstract: No abstract text available
    Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 Si1913DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking WE SC70-6

    Si1912EDH

    Abstract: No abstract text available
    Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original
    PDF Si1912EDH SC-70 OT-363 SC-70 S-03176--Rev. 05-Mar-01

    Si1912EDH

    Abstract: 113aa
    Text: SPICE Device Model Si1912EDH Vishay Siliconix N-Channel 20-V D-S MOSFET with Copper Leadframe CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1912EDH 14-Feb-01 113aa

    Si1913DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1913DH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1913DH 25-Oct-02

    AN609

    Abstract: Si1913DH
    Text: Si1913DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si1913DH AN609 28-Mar-07

    AN609

    Abstract: Si1913EDH
    Text: Si1913EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si1913EDH AN609 28-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si1912EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1912EDH N-Channel 20-V D-S MOSFET with Copper Leadframe Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original
    PDF Si1912EDH

    Si1913DH

    Abstract: No abstract text available
    Text: Si1913DH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.490 @ VGS = -4.5 V -1.0 0.750 @ VGS = -2.5 V - 0.81 1.10 @ VGS = -1.8 V - 0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original
    PDF Si1913DH SC-70 OT-363 SC-70 S-21482--Rev. 26-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1913EDH SC-70 2002/95/EC OT-363 SC-70 Si1913EDH-T1-E3 Si1913EDH-T1-GE3 11-Mar-11

    Si1917EDH

    Abstract: No abstract text available
    Text: Si1917EDH New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.370 @ VGS = –4.5 V –1.15 APPLICATIONS


    Original
    PDF Si1917EDH SC-70 OT-363 SC-70 S-03174--Rev. 07-Mar-01