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    SI140 Price and Stock

    Vishay Siliconix SI1401EDH-T1-GE3

    MOSFET P-CH 12V 4A SC70-6
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    DigiKey SI1401EDH-T1-GE3 Cut Tape 17,762 1
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    SI1401EDH-T1-GE3 Digi-Reel 17,762 1
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    SI1401EDH-T1-GE3 Reel 15,000 3,000
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    New Advantage Corporation SI1401EDH-T1-GE3 6,000 1
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    Vishay Siliconix SI1403BDL-T1-GE3

    MOSFET P-CH 20V 1.5A SC70-6
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    DigiKey SI1403BDL-T1-GE3 Cut Tape 11,687 1
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    SI1403BDL-T1-GE3 Digi-Reel 11,687 1
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    SI1403BDL-T1-GE3 Reel 6,000 3,000
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    Vishay Siliconix SI1403BDL-T1-BE3

    MOSFET P-CH 20V 1.4A SC70-6
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    DigiKey SI1403BDL-T1-BE3 Reel 6,000 3,000
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    SI1403BDL-T1-BE3 Digi-Reel 6,000 1
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    SI1403BDL-T1-BE3 Cut Tape 6,000 1
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    Vishay Siliconix SI1403BDL-T1-E3

    MOSFET P-CH 20V 1.4A SC70-6
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    DigiKey SI1403BDL-T1-E3 Digi-Reel 4,618 1
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    SI1403BDL-T1-E3 Cut Tape 4,618 1
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    SI1403BDL-T1-E3 Reel 3,000 3,000
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    ES Components SI1403BDL-T1-E3
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    Vishay Siliconix SI1401EDH-T1-BE3

    MOSFET P-CH 12V 4A/4A SC70-6
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    DigiKey SI1401EDH-T1-BE3 Cut Tape 2,000 1
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    SI1401EDH-T1-BE3 Digi-Reel 2,000 1
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    Find more SI140 price and stock on Findchips.com

    SI140 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1400DL Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI1400DL Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    Si1400DL SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI1400DL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC70-6 Original PDF
    SI1400DL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC-70-6 Original PDF
    SI1401EDH-T1-BE3 Vishay Siliconix MOSFET P-CH 12V 4A/4A SC70-6 Original PDF
    SI1401EDH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4A SC-70-6 Original PDF
    SI1402DH Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI1402DH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363 Original PDF
    SI1402DH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363 Original PDF
    SI1403BDL-T1-BE3 Vishay Siliconix MOSFET P-CH 20V 1.4A SC70-6 Original PDF
    SI1403BDL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 1.4A SC70-6 Original PDF
    SI1403BDL-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 1.5A SC70-6 Original PDF
    SI1403CDL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.1A SC-70-6 Original PDF
    Si1403DL Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1403DL Vishay Siliconix MOSFETs Original PDF
    SI1403DL-DS Vishay Telefunken DS-Spice Model for Si1403DL Original PDF
    Si1403DL SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1403DL-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1404BDH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.9A SOT363 Original PDF

    SI140 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1405DL

    Abstract: No abstract text available
    Text: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 18-Jul-08

    Si1406DH

    Abstract: No abstract text available
    Text: Si1406DH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 0.075 @ VGS = 2.5 V 3.6 0.096 @ VGS = 1.8 V 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original     		PDF Si1406DH SC-70 OT-363 SC-70 S-04475--Rev. 13-Aug-01

    Qrr20

    Abstract: No abstract text available
    Text: Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.150 @ VGS = −4.5 V −1.5 0.175 @ VGS = −3.6 V −1.4 0.265 @ VGS = −2.5 V −1.2 D TrenchFETr Power MOSFET Qg (Typ) 2.9 SOT-363


    Original     		PDF Si1403BDL OT-363 SC-70 Si1403BDL-T1--E3 S-50137--Rev. 24-Jan-05 Qrr20

    TB-17

    Abstract: No abstract text available
    Text: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS


    Original     		PDF Si1405BDH OT-363 SC-70 Si1405BDH-T1-E3 08-Apr-05 TB-17

    74888

    Abstract: No abstract text available
    Text: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1405BDH S-71490Rev. 23-Jul-07 74888

    Si1400DL

    Abstract: Si1400DL-T1-E3
    Text: New Product Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • TrenchFET Power MOSFET: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363


    Original     		PDF Si1400DL OT-363 SC-70 Si1400DL-T1 Si1400DL-T1-E3 18-Jul-08

    marking AF sc70-6

    Abstract: No abstract text available
    Text: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT


    Original     		PDF Si1404BDH SC-70 Si1404BDH-T1--E3 51453--Rev. marking AF sc70-6

    sc 0645

    Abstract: No abstract text available
    Text: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc 0645

    Si1401

    Abstract: SI1401EDH-T1-GE3 si1401e
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 18-Jul-08 Si1401 si1401e

    AN609

    Abstract: No abstract text available
    Text: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1405BDH AN609 19-Dec-07

    Si1407DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1407DL 18-Jul-08

    74843

    Abstract: AN609
    Text: Si1404BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1404BDH AN609 11-Jul-07 74843

    74131

    Abstract: No abstract text available
    Text: SPICE Device Model Si1404BDH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1404BDH 18-Jul-08 74131

    DIODE 76A

    Abstract: SC70-6 Si1404DH Si1404DH-T1 Si1404DH-T1-E3
    Text: Specification Comparison Vishay Siliconix Si1404BDH vs. Si1404DH Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET SC70-6 Identical Part Number Replacements: Si1404BDH-T1-E3 Replaces Si1404DH-T1-E3 Si1404BDH-T1-E3 Replaces Si1404DH-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si1404BDH Si1404DH SC70-6 Si1404BDH-T1-E3 Si1404DH-T1-E3 Si1404DH-T1 DIODE 76A SC70-6

    transistor 6822

    Abstract: 6822 transistors 6822 6822 transistor 6822 equivalent 9940 SI1402DH AN609
    Text: Si1402DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1402DH AN609 22-Mar-07 transistor 6822 6822 transistors 6822 6822 transistor 6822 equivalent 9940

    4946

    Abstract: 4946 mosfet AN609 Si1407DL
    Text: Si1407DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1407DL AN609 12-Mar-07 4946 4946 mosfet

    Si1404DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1404DH Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1404DH 27-Aug-04

    Si1400DL SPICE Device Model

    Abstract: Si1400DL
    Text: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1400DL S-50151Rev. 07-Feb-05 Si1400DL SPICE Device Model

    Si1405DL

    Abstract: 71500 uA 072
    Text: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1405DL 24-Apr-04 71500 uA 072

    Si1403DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1403DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1403DL 24-Apr-04

    Si1406DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1406DH 18-Sep-01

    Si1400DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1400DL network30 10-Sep-01

    Si1403DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1403DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1403DL 14-Oct-99

    Untitled

    Abstract: No abstract text available
    Text: Si1400DL Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 2.5 V Rated


    Original     		PDF Si1400DL 2002/95/EC OT-363 SC-70 Si1400DL-T1-E3 Si1400DL-T1-GE3 18-Jul-08