Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI1404BDH Search Results

    SF Impression Pixel

    SI1404BDH Price and Stock

    Vishay Siliconix SI1404BDH-T1-E3

    MOSFET N-CH 30V 1.9A/2.37A SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1404BDH-T1-E3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Vishay Siliconix SI1404BDH-T1-GE3

    MOSFET N-CH 30V 1.9A/2.37A SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1404BDH-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Vishay Intertechnologies SI1404BDH-T1-E3

    MOSFETs 30V 1.9A 2.25W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI1404BDH-T1-E3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.236
    Get Quote

    SI1404BDH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1404BDH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.9A SOT363 Original PDF
    SI1404BDH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.9A SOT363 Original PDF

    SI1404BDH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking AF sc70-6

    Abstract: No abstract text available
    Text: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT


    Original
    PDF Si1404BDH SC-70 Si1404BDH-T1--E3 51453--Rev. marking AF sc70-6

    74843

    Abstract: AN609
    Text: Si1404BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si1404BDH AN609 11-Jul-07 74843

    74131

    Abstract: No abstract text available
    Text: SPICE Device Model Si1404BDH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1404BDH 18-Jul-08 74131

    DIODE 76A

    Abstract: SC70-6 Si1404DH Si1404DH-T1 Si1404DH-T1-E3
    Text: Specification Comparison Vishay Siliconix Si1404BDH vs. Si1404DH Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET SC70-6 Identical Part Number Replacements: Si1404BDH-T1-E3 Replaces Si1404DH-T1-E3 Si1404BDH-T1-E3 Replaces Si1404DH-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original
    PDF Si1404BDH Si1404DH SC70-6 Si1404BDH-T1-E3 Si1404DH-T1-E3 Si1404DH-T1 DIODE 76A SC70-6

    marking AF sc70-6

    Abstract: No abstract text available
    Text: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT


    Original
    PDF Si1404BDH SC-70 Si1404BDH-T1--E3 18-Jul-08 marking AF sc70-6

    marking AF sc70-6

    Abstract: No abstract text available
    Text: Si1404BDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.238 at VGS = 4.5 V 1.9 0.380 at VGS = 2.5 V 1.51 VDS (V) 30 Qg (Typ.) 1.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si1404BDH 2002/95/EC SC-70 Si1404BDH-T1-E3 Si1404BDH-T1-GE3 18-Jul-08 marking AF sc70-6

    Untitled

    Abstract: No abstract text available
    Text: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT


    Original
    PDF Si1404BDH SC-70 Si1404BDH-T1--E3 08-Apr-05

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8