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    Vishay Siliconix SI1303DL-T1-E3

    MOSFET P-CH 20V 670MA SC70-3
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    DigiKey SI1303DL-T1-E3 Cut Tape
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    SI1303DL-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI1303EDL-T1-E3

    MOSFET P-CH 20V 670MA SC70-3
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    DigiKey SI1303EDL-T1-E3 Reel 3,000
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    Vishay Siliconix SI1303DL-T1-GE3

    MOSFET P-CH 20V 670MA SC70-3
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    Samtec Inc FSI-130-03-G-D-AD-SD-K-TR

    Board to Board & Mezzanine Connectors 1.00 mm One-Piece Interface
    Free Sample
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    Mouser Electronics FSI-130-03-G-D-AD-SD-K-TR
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    Vishay Intertechnologies SI1303DLT1

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    Bristol Electronics SI1303DLT1 6,501
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    ComSIT USA SI1303DLT1 2,235
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    SI1303 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si1303DL Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si1303DL SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1303DL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3 Original PDF
    SI1303DL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3 Original PDF
    SI1303EDL Vishay Siliconix MOSFETs Original PDF
    SI1303EDL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3 Original PDF

    SI1303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1303DL-T1-gE3

    Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 11-Mar-11

    AN609

    Abstract: Si1303EDL
    Text: Si1303EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1303EDL AN609 03-May-07

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 08-Apr-05 Si1303DL

    SI1303DL-T1-E3

    Abstract: Si1303DL
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free


    Original     		PDF Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL S-50151Rev. 07-Feb-05

    Si1303DL

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free


    Original     		PDF Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303EDL S-72407Rev. 26-Nov-07

    in 4751

    Abstract: AN609 Si1303DL
    Text: Si1303DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1303DL AN609 22-Mar-07 in 4751

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 18-Jul-08

    Si1303DL-T1-gE3

    Abstract: Si1303DL
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08

    Si1303DL

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free


    Original     		PDF Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3 08-Apr-05

    Si1303DL

    Abstract: 31 MOSFET sot-323
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability


    Original     		PDF Si1303DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 31 MOSFET sot-323

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 18-Jul-08 Si1303DL

    Si1303EDL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303EDL 18-Jul-08

    SI1303DL

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability


    Original     		PDF Si1303DL OT-323 SC-70 08-Apr-05

    S-63639

    Abstract: S-63639-Rev SI1303DL
    Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code


    Original     		PDF Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 S-63639-Rev

    Si1303DL

    Abstract: S-63639
    Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code


    Original     		PDF Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 09-Nov-99 Si1303DL

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 29-May-01

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 29-May-01

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A