74285
Abstract: RG 265 si1073 SC-89
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
11-Mar-11
74285
RG 265
si1073
SC-89
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74285
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
74285
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Untitled
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
11-Mar-11
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74876
Abstract: SI1073X
Text: SPICE Device Model Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si1073X
S-71044Rev.
21-May-07
74876
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74285
Abstract: SC-89 SI1073X
Text: Si1073X Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.25 RoHS
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Original
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PDF
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Si1073X
SC-89
Si1073X-T1-E3
08-Apr-05
74285
SC-89
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Untitled
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
18-Jul-08
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Si1073X VISHAY
Abstract: SI1073X
Text: SPICE Device Model Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si1073X
18-Jul-08
Si1073X VISHAY
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Untitled
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
74285
Abstract: SC-89 SI1073X
Text: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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PDF
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Si1073X
SC-89
Si1073X-T1-E3
Si1073X-T1-GE3
18-Jul-08
74285
SC-89
|
74285
Abstract: SI1073X
Text: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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PDF
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Si1073X
SC-89
Si1073X-T1-E3
Si1073X-T1-GE3
18-Jul-08
74285
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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