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    SI106 Price and Stock

    Vishay Siliconix SI1062X-T1-GE3

    MOSFET N-CH 20V SC89-3
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    DigiKey SI1062X-T1-GE3 Reel 93,000 3,000
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    SI1062X-T1-GE3 Cut Tape 2,490 1
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    SI1062X-T1-GE3 Digi-Reel 1
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    New Advantage Corporation SI1062X-T1-GE3 6,000 1
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    Silicon Laboratories Inc SI1062-A-GMR

    IC RF TXRX+MCU ISM<1GHZ 36QFN
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    DigiKey SI1062-A-GMR Reel 2,500 2,500
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    SI1062-A-GMR Cut Tape 1,381 1
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    Mouser Electronics SI1062-A-GMR
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    Symmetry Electronics SI1062-A-GMR 1
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    Silicon Laboratories Inc SI1062-A-GM

    IC RF TXRX+MCU ISM<1GHZ 36QFN
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    DigiKey SI1062-A-GM Tray 2,442 1
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    Mouser Electronics SI1062-A-GM 674
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    Newark SI1062-A-GM Bulk 1
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    Symmetry Electronics SI1062-A-GM 1
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    Silicon Laboratories Inc SI1061-A-GM

    IC RF TXRX+MCU ISM<1GHZ 36QFN
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    DigiKey SI1061-A-GM Tray 2,430 1
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    Mouser Electronics SI1061-A-GM 2,440
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    Arrow Electronics SI1061-A-GM 309 98 Weeks 1
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    Newark SI1061-A-GM Bulk 21 1
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    Chip1Stop SI1061-A-GM 50
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    Symmetry Electronics SI1061-A-GM 1
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    Silicon Laboratories Inc SI1064-A-GM

    IC RF TXRX+MCU ISM<1GHZ 36QFN
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    DigiKey SI1064-A-GM Tray 2,420 1
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    Chip1Stop SI1064-A-GM 60
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    Symmetry Electronics SI1064-A-GM 1
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    Find more SI106 price and stock on Findchips.com

    SI106 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI106 Unknown SMT Power Inductor Original PDF
    SI1060-A-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU 64KB 4KB RAM 36QFN Original PDF
    SI1060-A-GMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU 64KB 4KB RAM 36QFN Original PDF
    SI106-100 Unknown SMT Power Inductor Original PDF
    SI106-100 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-101 Unknown SMT Power Inductor Original PDF
    SI106-101 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-120 Unknown SMT Power Inductor Original PDF
    SI106-120 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-121 Unknown SMT Power Inductor Original PDF
    SI106-121 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-150 Unknown SMT Power Inductor Original PDF
    SI106-150 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-151 Unknown SMT Power Inductor Original PDF
    SI106-151 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-180 Unknown SMT Power Inductor Original PDF
    SI106-180 Xinwang Electronics SMT Power Inductor Original PDF
    SI106-181 Unknown SMT Power Inductor Original PDF
    SI106-181 Xinwang Electronics SMT Power Inductor Original PDF
    SI1061-A-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU 32KB 4KB RAM 36QFN Original PDF

    SI106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1069X 2002/95/EC SC-89 Si1069X-T1-GE3 18-Jul-08

    SI1067X

    Abstract: No abstract text available
    Text: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1067X 2002/95/EC SC-89 Si1067X-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1062X-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si1062X-GE3 AN609, 0989u 0055m 1616m 6464m 08-May-12

    Untitled

    Abstract: No abstract text available
    Text: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1069X 2002/95/EC SC-89 Si1069X-T1-GE3 11-Mar-11

    SC-89

    Abstract: Si1065X Si1065X-T1-GE3 si1065
    Text: Si1065X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1065X 2002/95/EC SC-89 Si1065X-T1-GE3 11-Mar-11 SC-89 si1065

    Si1067X

    Abstract: Si1067 SC-89
    Text: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1067X 2002/95/EC SC-89 Si1067X-T1-GE3 11-Mar-11 Si1067 SC-89

    74322

    Abstract: Si1067X 82489 "marking code X" SC-89 Si1067 RthJA
    Text: New Product Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si1067X SC-89 Si1067X-T1-E3 Si1067X-T1-GE3 18-Jul-08 74322 82489 "marking code X" SC-89 Si1067 RthJA

    Si1065X-T1-GE3

    Abstract: Si1065X SC-89
    Text: New Product Si1065X Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si1065X SC-89 Si1065X-T1-E3 Si1065X-T1-GE3 18-Jul-08 SC-89

    Si1069X

    Abstract: No abstract text available
    Text: SPICE Device Model Si1069X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1069X S-71045Rev. 21-May-07

    Untitled

    Abstract: No abstract text available
    Text: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1069X 2002/95/EC SC-89 Si1069X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1069X 2002/95/EC SC-89 Si1069X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1069X 2002/95/EC SC-89 Si1069X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1065X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1065X 2002/95/EC SC-89 Si1065X-T1-GE3 18-Jul-08

    Si1067

    Abstract: AN609 Si1067X
    Text: Si1067X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1067X AN609 19-Dec-07 Si1067

    SI1067X

    Abstract: No abstract text available
    Text: New Product Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si1067X SC-89 Si1067X-T1-E3 Si1067X-T1-GE3 08-Apr-05

    Si1069X

    Abstract: SC-89
    Text: New Product Si1069X Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1069X SC-89 Si1069X-T1-E3 Si1069X-T1-GE3 18-Jul-08 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si106x/108x Ultra-Low Power MCU with Integrated High-Performance Sub-1 GHz Transceiver Ultra-low power 8051 µC Core - 25 MHz, single-cycle 8051 compatible CPU - 25 MIPS peak throughput with 25 MHz clock - Industry's lowest active and sleep currents - 160 µA/MHz: active mode


    Original     		PDF Si106x/108x 36-pin 10-bnsequential

    SI106

    Abstract: No abstract text available
    Text: SMT Power Inductor SI106 Type Features Low profile 5.9mm max. height SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    Original     		PDF SI106

    74365

    Abstract: 74365 data sheet Si1067X
    Text: SPICE Device Model Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1067X 18-Jul-08 74365 74365 data sheet

    Si1069X

    Abstract: No abstract text available
    Text: SPICE Device Model Si1069X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1069X 18-Jul-08

    SI1067X

    Abstract: No abstract text available
    Text: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1067X 2002/95/EC SC-89 Si1067X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si1067X

    Abstract: 74365 Si1067 74365 data sheet
    Text: SPICE Device Model Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1067X S-71561Rev. 30-Jul-07 74365 Si1067 74365 data sheet

    Si1065X

    Abstract: S-70174 A-29 diode 518s
    Text: SPICE Device Model Si1065X Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1065X S-70174Rev. 29-Jan-07 S-70174 A-29 diode 518s

    SI106

    Abstract: SI106-100 SI106-101 SI106-120 SI106-121 SI106-150 SI106-151 SI106-180 SI106-181
    Text: SMT Power Inductor_ _ _ _ _ _ _ SI106 Type Features • Low profile 5.9mm max. height SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter,


    OCR Scan     		PDF SI106 SI106-100 SI106-120 SI106-150 SI106-180 S1106 SI106-151 SI106-181 SI106-101 SI106-121