shinetsu
Abstract: KMC288 SLL-28 EN-4088Z KMC-166 TEXAS INSTRUMENTS, Mold EPIC-1S
Text: TEXAS INSTRUMENTS Final Notification for the Qualification of Shinetsu KMC-288 Mold Compound at the Hiji, Malaysia, and Mexico Assembly/Test Facilities May 19, 1998 Abstract Texas Instruments, Mixed Signal and Logic group, is qualifying Shinetsu KMC-288 mold
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KMC-288
KMC-288
KMC-166
SN74ACT16241DGG
JESD22
KMC-166
SN74ACT16841DGG
SN74ABT16823DGV
shinetsu
KMC288
SLL-28
EN-4088Z
TEXAS INSTRUMENTS, Mold
EPIC-1S
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shinetsu
Abstract: TEXAS INSTRUMENTS, Mold Compound Compound Texas Instruments packaging material KMC288 KMC166 SN74CBT16211 SN74HCT245 TEXAS INSTRUMENTS, Mold
Text: TEXAS INSTRUMENTS Initial Notification for the qualification of Shinetsu-KMC288 Mold Compound at the Malaysia and Mexico Assembly/Test Facilities December 11, 1997 Abstract Texas Instruments, Standard Linear and Logic group, is qualifying Shinetsu KMC288 mold
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Shinetsu-KMC288
KMC288
KMC166
shinetsu
TEXAS INSTRUMENTS, Mold Compound
Compound
Texas Instruments packaging material
SN74CBT16211
SN74HCT245
TEXAS INSTRUMENTS, Mold
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shinetsu G746
Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal
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AN-GEN-001
25deg
6x10E-3
2x10E14
150deg
shinetsu G746
G746
shinetsu
shinetsu G746 rohs
G746 shinetsu
ANGEN001
G746 rohs
thermal conductivity
shin-etsu
shin-etsu Chemical
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LS013B7DH01
Abstract: d143 T transistor Zebra stripe s TSSCS lcd tv parts Zebra stripe sharp TFT LCD tv driver LCP-2110019B Industrial Devices L168 V144H
Text: No. LCP-2110019B Date 16th Aug 2010 Technical Literature For TFT-LCD Module Model No. LS013B7DH01 Notice The technical Literature is subject to change without any prior notice for the purpose of product improvement. Please contact Sharp or its representative before designing
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LCP-2110019B
LS013B7DH01
Celsius/95
-30degrees
200V200pF
LS013B7DH01
d143 T transistor
Zebra stripe s
TSSCS
lcd tv parts
Zebra stripe
sharp TFT LCD tv driver
Industrial Devices L168
V144H
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Dow Corning 747
Abstract: 2a265vac 2A265 s202t01f S202T01 shin-etsu g747 sharp S202T02 2A125VAC s202t02 origin 4pin
Text: S102T01 Series S202T01 Series IT rms ≤2A, Non-Zero Cross type Low profile SIP 4pin Triac output SSR S102T01 Series S202T01 Series ∗ Zero cross type is also available. (S102T02 Series/ S202T02 Series) • Description ■ Agency approvals/Compliance S102T01 Series and S202T01 Series Solid State
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S102T01
S202T01
S102T02
S202T02
UL508,
E94758
Dow Corning 747
2a265vac
2A265
s202t01f
shin-etsu g747
sharp S202T02
2A125VAC
origin 4pin
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sma6822
Abstract: sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260
Text: SMA6822MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply
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SMA6822MP
24-pin)
SMA6822MP
sma6822
sma6822m
SMA6820
2451 mosfet
B105
CF35
G746
SC102
SMA6820MP
YG6260
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor MPC8349EEC Rev. 2, 5/2005 Advance Information MPC8349E PowerQUICC II Pro Integrated Host Processor Hardware Specifications The MPC8349E contains a PowerPC processor core with system logic required for networking, storage, and general-purpose embedded applications. For functional
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MPC8349EEC
MPC8349E
MPC8349E
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F 2452 mosfet
Abstract: SMA6862M B105 CF35 G746 SC102 SMA6800M YG6260
Text: SMA6862M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating
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SMA6862M
24-pin)
SMA6862M
F 2452 mosfet
B105
CF35
G746
SC102
SMA6800M
YG6260
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M100 TRIAC
Abstract: No abstract text available
Text: TMA16xP Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 16 ARMS on-state current
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TMA16xP
M100 TRIAC
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3025Z
Abstract: 02578 SC102 diode G746 SC102 SI-3025ZD SI-3025ZF SSJ-02578
Text: SI-3025ZF Data Sheet 27468.27* ar ors e n t Li ula g e R High-Current, Low-Dropout, 2.5 V Regulator Designed to meet the high-current requirements in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office equipment, the SI-3025ZF voltage regulator offers the
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SI-3025ZF
SI-3025ZF
3025Z
02578
SC102 diode
G746
SC102
SI-3025ZD
SSJ-02578
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3phase MOSFET INVERTER
Abstract: sla68 B105 CF35 G746 SC102 SMA6861M YG6260 INVERTER ALLEGRO 24 samsung flyback pin diagram
Text: SMA6851M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating power supply Built-in protection circuit for controlling power supply
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SMA6851M
24-pin)
SMA6851M
3phase MOSFET INVERTER
sla68
B105
CF35
G746
SC102
SMA6861M
YG6260
INVERTER ALLEGRO 24
samsung flyback pin diagram
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sma6863
Abstract: sma6863m samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet
Text: SMA6863M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating
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SMA6863M
24-pin)
SMA6863M
sma6863
samsung electrolytic capacitor
B105
CF35
G746
SC102
SMA6800M
YG6260
F 2452 mosfet
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CF35
Abstract: FM20 G746 SC102 TMA54S-L TMA56S-L YG6260 6562-9 samsung washing machine circuit diagram
Text: TMA5x Series Triac Bidirectional Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 400 or 600 V ▪ 5 ARMS on-state current
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E118037)
O-220F)
CF35
FM20
G746
SC102
TMA54S-L
TMA56S-L
YG6260
6562-9
samsung washing machine circuit diagram
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samsung flyback pin diagram
Abstract: flyback samsung B105 CF35 G746 SC102 YG6260
Text: SCM1101MF High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others ▪ Protection against simultaneous high- and low-side turning on ▪ Bootstrap diodes with series resistors for suppressing
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SCM1101MF
samsung flyback pin diagram
flyback samsung
B105
CF35
G746
SC102
YG6260
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor MPC8349EEC Rev. 8, 2/2007 Technical Data MPC8349E PowerQUICC II Pro Integrated Host Processor Hardware Specifications The MPC8349E PowerQUICC™ II Pro is a next generation PowerQUICC II integrated host processor. The MPC8349E contains a PowerPC™ processor core built on Power
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MPC8349EEC
MPC8349E
MPC8349E
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MPC8533EEC Rev. 0, 04/2008 MPC8533E PowerQUICC III Integrated Processor Hardware Specifications 1 MPC8533E Overview This section provides a high-level overview of MPC8533E features. Figure 1 shows the major functional units within
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MPC8533EEC
MPC8533E
MPC8533E
32-bit
32-Kbyte
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor MPC8347EEC Rev. 2, 5/2005 Advance Information MPC8343E PowerQUICC II Pro Integrated Host Processor Hardware Specifications The MPC8343E contains a PowerPC processor core with system logic required for networking, storage, and general-purpose embedded applications. For functional
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MPC8347EEC
MPC8343E
MPC8349E
MPC8343EEC
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Untitled
Abstract: No abstract text available
Text: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-6606S Preliminary Features Package The CTXS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.45
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CTXS-6606S
CTXS-6606S
O-247-3L
CTXS-6606S-DS
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Untitled
Abstract: No abstract text available
Text: Dropper Type - Application Note •Heat Radiation and Reliability Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink,
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SI-3000N
SI-3001N
SI-3002N
SI-3000B
SI-3000F
SI-3000C
SI-3000J
SI-3000R
SI-3000P
SI-3000V
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marking r55
Abstract: No abstract text available
Text: Off-Line PWM Controllers with Integrated Power MOSFET STR4A100 Series General Descriptions Package The STR4A100 series are power ICs for switching power supplies, incorporating a sense MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the
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STR4A100
marking r55
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Untitled
Abstract: No abstract text available
Text: Primary Side Regulation Off-Line PWM Controllers with Integrated Power MOSFET STR5A100D Series General Descriptions Package The STR5A100D series is power IC with primary side regulation for switching power supplies, incorporating a sense MOSFET and a current mode PWM controller IC.
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STR5A100D
STR5A100D-DS
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Untitled
Abstract: No abstract text available
Text: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6606S Preliminary Features Package The CTNS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15
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CTNS-6606S
CTNS-6606S
O-247-3L
CTNS-6606S-DS
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PPAP level submission requirement table
Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure
Text: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage
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TO-126LP
Abstract: No abstract text available
Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle
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