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    SHANTOU HUASHAN ELECTRONIC DEVICES Search Results

    SHANTOU HUASHAN ELECTRONIC DEVICES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SHANTOU HUASHAN ELECTRONIC DEVICES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Shantou Huashan Electronic Devices

    Abstract: HCP6C60
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP6C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCP6C60 Shantou Huashan Electronic Devices HCP6C60

    HFP840

    Abstract: diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220
    Text: HFP840 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,


    Original     		PDF HFP840 O-220 IRF840 width300S HFP840 diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220

    HFP730

    Abstract: HFP730 equivalent IRF730 transistor IRF730
    Text: HFP730 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,


    Original     		PDF HFP730 O-220 IRF730 width300S HFP730 HFP730 equivalent IRF730 transistor IRF730

    hfp640

    Abstract: IRF640 equivalent irf640
    Text: HFP640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,


    Original     		PDF HFP640 O-220 IRF640 width300S hfp640 IRF640 equivalent irf640

    HBS170

    Abstract: No abstract text available
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They


    Original     		PDF HBS170 500mA 100uA 200mA HBS170

    "Silicon Controlled Rectifier"

    Abstract: HCP8C60 gate voltage control circuit dc voltage
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP8C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =8A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCP8C60 "Silicon Controlled Rectifier" HCP8C60 gate voltage control circuit dc voltage

    SCR 40A 600V

    Abstract: HCP20C60 cicuit SCR 20A 600V
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP20C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCP20C60 SCR 40A 600V HCP20C60 cicuit SCR 20A 600V

    HCP16C60

    Abstract: No abstract text available
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP16C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =16A) * Low On-State Voltage (1.35V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCP16C60 HCP16C60

    HFP830

    Abstract: IRF830 DIODE HALF BRIDGE TO-220
    Text: HFP830 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to


    Original     		PDF HFP830 O-220 IRF830 HFP830 IRF830 DIODE HALF BRIDGE TO-220

    transistor equivalent irf740

    Abstract: full bridge irf740 HFP740 irf740 equivalent IRF740 mosfet irf740
    Text: HFP740 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize


    Original     		PDF HFP740 O-220 IRF740 width300S 10Apk transistor equivalent irf740 full bridge irf740 HFP740 irf740 equivalent IRF740 mosfet irf740

    HJP1645CT

    Abstract: No abstract text available
    Text: HJP1645CT Shantou Huashan Electronic Devices Co.,Ltd. 16A SCHOTTKY BARREIER RECTIFIER █ Features „ „ „ „ „ „ █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability


    Original     		PDF HJP1645CT O-220 die60HZ. 25unless HJP1645CT

    HJP10100CT

    Abstract: No abstract text available
    Text: HJP10100CT Shantou Huashan Electronic Devices Co.,Ltd. 10A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ Features █ Package „ Schottky Barrier Chip „ Guard Ring Die Construction for Transient Protection „ Low Power Loss,High Efficiency „ High Surge Capability


    Original     		PDF HJP10100CT O-220 HJP10100CT

    HCP12C60

    Abstract: gate voltage control dc
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP12C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCP12C60 HCP12C60 gate voltage control dc

    HCN6C60

    Abstract: No abstract text available
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCN6C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCN6C60 HCN6C60

    FQP30N06

    Abstract: fqp30n06 equivalent hfp30n06
    Text: HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize


    Original     		PDF HFP30N06 O-220 FQP30N06 Tempe0N06 FQP30N06 fqp30n06 equivalent hfp30n06

    relay 6v 100 ohm

    Abstract: electronic relay 6v phase control trigger ht138f IT15A
    Text: HT138F-600 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F


    Original     		PDF HT138F-600 O-220F O-220F HBT138F-600 relay 6v 100 ohm electronic relay 6v phase control trigger ht138f IT15A

    H2N7000

    Abstract: No abstract text available
    Text: H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products


    Original     		PDF H2N7000 500mA 200mA H2N7000

    HJP20100CT

    Abstract: No abstract text available
    Text: HJP20100CT Shantou Huashan Electronic Devices Co.,Ltd. 20A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ Features █ Package „ Schottky Barrier Chip „ Guard Ring Die Construction for Transient Protection „ Low Power Loss,High Efficiency „ High Surge Capability


    Original     		PDF HJP20100CT O-220 HJP20100CT

    c25 rectifier

    Abstract: 10A high efficiency rectifier
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HKP1040CT 10A SCHOTTKY BARREIER RECTIFIER █ Features █ Package n Metal of silicon rectifier,majority carrier conducton n Guard ring for transient protection n Low power loss, high efficiency n High current capability, low VF


    Original     		PDF HKP1040CT O-220 300us c25 rectifier 10A high efficiency rectifier

    electronic relay 6v

    Abstract: No abstract text available
    Text: HTF16A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=16A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F


    Original     		PDF HTF16A60 O-220F O-220F electronic relay 6v

    scr 600V 10A

    Abstract: No abstract text available
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HCF10C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description


    Original     		PDF HCF10C60 scr 600V 10A

    6V relay

    Abstract: electronic relay 6v Triac 3a 600v HTF6A60
    Text: HTF6A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=6A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F █ General Description


    Original     		PDF HTF6A60 O-220F O-220F 6V relay electronic relay 6v Triac 3a 600v HTF6A60

    diode 28v, amps

    Abstract: HKP3040CT c125 diode
    Text: Shantou Huashan Electronic Devices Co.,Ltd. HKP3040CT 30A SCHOTTKY BARREIER RECTIFIER █ Features █ Package n 30 Amps Total 15 Amps Per Diode Leg n Guard Ring Die Construction for Transient Protection n Low Power Loss,High Efficiency n High Surge Capability


    Original     		PDF HKP3040CT O-220 diode 28v, amps HKP3040CT c125 diode

    electronic relay 6v

    Abstract: triac 600V 80A triac 1500v relay 6v 150 ohm 6v 150 ohm relay Triac 3a 600v triac 600v 3a
    Text: HBT137F-600 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=8A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F


    Original     		PDF HBT137F-600 O-220F O-220F electronic relay 6v triac 600V 80A triac 1500v relay 6v 150 ohm 6v 150 ohm relay Triac 3a 600v triac 600v 3a