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    SHANDONG YIGUANG ELECTRONIC JOINT STOCK Search Results

    SHANDONG YIGUANG ELECTRONIC JOINT STOCK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    SHANDONG YIGUANG ELECTRONIC JOINT STOCK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1037AK SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: 1 Package:SOT-23 Excellent Hfe Linearity. (3) Complements the 2SC2412K/2SC4081/2SC4617/2SC4617H/


    Original     		PDF 2SA1037AK OT-23 2SC2412K/2SC4081/2SC4617/2SC4617H/ 2SC5658/2SC1740S.

    BC557

    Abstract: transistor marking bc557 BC856A-BC858C BC557 sot-23 BC856BLT1 bc857clt1 T2 BC558 TRANSISTOR
    Text: Shandong Yiguang Electronic Joint stock Co., Ltd SEMICONDUCTOR BC856A-BC858C TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 SURFACE MOUNT SMALL SIGNAL TRANSISTORS * Epitaxial Die Construction * Ideally Suited Automatic Insertion * 310mW Power Dissipation


    Original     		PDF BC856A-BC858C OT-23 310mW BC846-BC848) BC856 BC857 BC858 BC557 transistor marking bc557 BC856A-BC858C BC557 sot-23 BC856BLT1 bc857clt1 T2 BC558 TRANSISTOR

    BAW* diode

    Abstract: diode device data on semiconductor MGA881
    Text: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA BAW156LT1 DUAL SURFACE MOUNT SWITCHING DIODE Medium Switching Time Low Leakage Current Applications Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol


    Original     		PDF BAW156LT1 OT-23 100uAdc) MLB754 MBG525 MGA881 BAW* diode diode device data on semiconductor MGA881

    2SC1815 NPN SOT-23

    Abstract: 2sc1815 sot-23 2sa1015 sot-23 2SC1815 2SC1815LT1
    Text: Shandong Yiguang Electronic Joint stock Co., Ltd SEMICONDUCTOR 2SC1815LT1 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating


    Original     		PDF 2SC1815LT1 OT-23 2SA1015 150mA 2SC1815 NPN SOT-23 2sc1815 sot-23 2sa1015 sot-23 2SC1815 2SC1815LT1

    Untitled

    Abstract: No abstract text available
    Text: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23


    Original     		PDF S9015LT1 S9014LT1 -100mA OT-23 -100mA -10mA 062in 300uS S9015LT1

    JB marking transistor

    Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking
    Text: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo


    Original     		PDF MMBTH10LT1 OT-23 100uA 1000MHz JB marking transistor transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking

    MARKING W2 SOT23 TRANSISTOR

    Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
    Text: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23


    Original     		PDF 2SC2714 550MHz OT-23 CHARACTERIST12 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR

    2sa1015 sot-23

    Abstract: 2sc1815 sot-23 2SA1015LT1 2sa1015 2SA1015L 2sa1015 equivalent 2SA1015M
    Text: 2SA1015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating


    Original     		PDF 2SA1015LT1 OT-23 2SC1815 150mA 2sa1015 sot-23 2sc1815 sot-23 2SA1015LT1 2sa1015 2SA1015L 2sa1015 equivalent 2SA1015M

    Untitled

    Abstract: No abstract text available
    Text: Shandong Yiguang Electronic Joint stock Co., Ltd SEMICONDUCTOR MMBT6428LT1 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Amplifier Transistors Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo


    Original     		PDF MMBT6428LT1 OT-23

    MMBT4403LT

    Abstract: No abstract text available
    Text: MMBT4403LT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Tamb=25℃


    Original     		PDF MMBT4403LT1 OT-23 225mW MMBT4403LT

    CJ 4148

    Abstract: MBG464 1N4148 SOT-23 JEDEC 1N4148 1N4148 surface mount
    Text: MMBD4148 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Package:SOT-23 Fast Switching Speed Electrically Identical to Standard JEDEC 1N4148 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion


    Original     		PDF MMBD4148 OT-23 1N4148 MGD290 MGD004 CJ 4148 MBG464 1N4148 SOT-23 JEDEC 1N4148 1N4148 surface mount

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401LT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT4401LT1 OT-23 225mW

    SURFACE MOUNT DIODE JS 8

    Abstract: MBG381 BAs21 JS power electronic handbook
    Text: BAS21 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Package:SOT-23 Switch diode High Voltage Surface Mount Package Ideally Suited for Automatic Insertion ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF BAS21 OT-23 MBG381 MBG445 BAS21. BAS20. BAS19. MBG447 SURFACE MOUNT DIODE JS 8 MBG381 BAs21 JS power electronic handbook

    2sa1576

    Abstract: 2SA20
    Text: 2SC2412K SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Feature: Package:SOT-23 1 Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/ 2SA1774/2SA1774H/2SA2029/2SA933AS.


    Original     		PDF 2SC2412K OT-23 2SA1037AK/2SA1576/ 2SA1774/2SA1774H/2SA2029/2SA933AS. 32MHZ 2sa1576 2SA20

    MMBT2222ALT1 1P

    Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
    Text: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT2222/ALT1 MMBT2907/ALT1 225mW OT-23 MMBT2222ALT1 1P transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor

    BCW60ALT1

    Abstract: No abstract text available
    Text: BCW60LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Collector Current: Ic= 100mA * High Total Power Dissipation:Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF BCW60LT1 100mA 225mW OT-23 BCW60ALT1

    s8050l

    Abstract: S8050LT1 S8050 S8550LT1
    Text: S8050LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Complement to S8550LT1 Package:SOT-23 Collector Current :Ic= 500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S8050LT1 S8550LT1 OT-23 500mA 225mW 500mA 062in Width300uS s8050l S8050LT1 S8050 S8550LT1

    s8550lt1

    Abstract: s8050l S8050LT1 S8550
    Text: S8550LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S8050LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S8550LT1 S8050LT1 OT-23 -500mA 225mW -500mA -50mA s8550lt1 s8050l S8050LT1 S8550

    s9013

    Abstract: S9013LT1
    Text: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9013LT1 OT-23 S9012LT1 500mA 225Mw 500mA 062in 300uS s9013 S9013LT1

    transistor 25

    Abstract: transistor mmbt5551lt1
    Text: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT5551LT1 225mW OT-23 transistor 25 transistor mmbt5551lt1

    Untitled

    Abstract: No abstract text available
    Text: BCW29/30LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Base Voltage


    Original     		PDF BCW29/30LT1 OT-23

    50K MARKING SOT23

    Abstract: No abstract text available
    Text: MMBTA70LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF MMBTA70LT1 OT-23 50K MARKING SOT23

    BAV99LT1

    Abstract: a7 surface mount diode bav99LT1a7
    Text: BAV99LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA DUAL SURFACE MOUNT SWITCHING DIODE * Fast Switching Speed * High Conductance * Surface Mount Package Ideally Suited for Automatic Insertion ABSOLUTE MAXIMUM RATINGS at T=25℃


    Original     		PDF BAV99LT1 OT-23 BAV99LT1 a7 surface mount diode bav99LT1a7

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -150V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT5401LT1 OT-23 225mW -150V