Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SGSP361 Search Results

    SGSP361 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SGSP361 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP361 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SGSP361 STMicroelectronics Shortform Data Book 1988 Short Form PDF

    SGSP361 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3QE { = J *w Æ u D _WÊ_ 7 ^ 5 3 ? S C S -T H O M S O N Q Ü S W S s fi 1 • ' " p 3 < :M 3 > S’ ,H # " S M H D ^ © [l[L i© ¥ ^ © iD g i S G S P 3 6 1 S G S P 3 6 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 V qss


    OCR Scan     		PDF SGSP361 SGSP362 SGSP361

    SGSP362

    Abstract: transistor ph-18 schematic diagram UPS
    Text: SGSP361 SGSP362 / T T SGS-THOM SON ^ 7 # . RS10 glSi lilLI(S?[S©HO(Si N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on SGSP361 SGSP362 100 V 80 V 0.15 Q 0.1 fi Id 18 A 22 A • • • • HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS


    OCR Scan     		PDF SGSP361 SGSP362 SQSP361 250FA SGSP362 transistor ph-18 schematic diagram UPS

    lsd 513

    Abstract: SGSP361 SGSP362
    Text: r Z 7 SG S-TtiO M SO N ^7# MœimHÊÏÏCMDÊS SGSP361 SGSP362 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on 'd SGSP361 SGSP362 100 V 80 V 0.15 Q 0.1 U 18 A 22 A • • • • HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS


    OCR Scan     		PDF SGSP361 SGSP362 lsd 513 SGSP362

    p461

    Abstract: P561 SGSP461 transistors C106 SGSP561 bv42 sgsp302
    Text: S G S-TH O M SO N . ; D7E ; . 73C •* h I "■ SGSP361/P461/P561 ] ;A h SGSP302/P4B2/P562. : l , 1 j D g 17379 7^5^537 HIGH SPEED SWITCHING APPLICATIONS V DSS TO-220 SOT-93 TO-3 A B S O L U T E M A X IM U M R A T IN G S Drain-source voltage VGS = 0 Drain-gate voltage (RGS = 20KD )


    OCR Scan     		PDF SGSP361/P461/P561 SGSP302/P4B2/P562. O-220 OT-93 SGSP361 SGSP461 SGSP561 SGSP362 SGSP462 SGSP562 p461 P561 transistors C106 bv42 sgsp302

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


    OCR Scan     		PDF O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


    OCR Scan     		PDF P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591

    SGSP321

    Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
    Text: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*


    OCR Scan     		PDF MTP3055AFI STLT20* STLT20FI SGSP321 IRF153 IRFP153 IRFP153FI STLT30* SGSP381 SGSP481 sgs*P381 SGSP201 STLT20 STLT20FI BUZ11S2FI SGSP591

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    mos Turn-off Thyristor

    Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
    Text: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


    OCR Scan     		PDF

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    ISOWATT220

    Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
    Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00


    OCR Scan     		PDF STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI O-220 ISOWATT22Û ISOWATT22Q ISOWATT220 MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382

    sgs*P381

    Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
    Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50


    OCR Scan     		PDF OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239

    sef530

    Abstract: SEF532 SEF531 60v 9A c243s
    Text: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS


    OCR Scan     		PDF SEF530 SEF531 SEFS32 sif533 00V/60V 00V/60V SEF532/SEF533 300ms, SGSP361 C-243 SEF532 60v 9A c243s

    bow94c

    Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF IRF530FI SGSP361 SGSP461 BUZ21 BUZ25 IRF142 IRF542 IRF542FI IRF152 IRFP152 bow94c BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SMD SJ 87 b0334 BUZ10

    ISOWATT-220

    Abstract: mtp15n05 BU210A ISOWATT220
    Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00


    OCR Scan     		PDF O-220 ISOWATT220 ISOWATT220 STH107N50 STH10N50 STHI10N50 STHI10N50FI ISOWATT-220 mtp15n05 BU210A

    sgs*P381

    Abstract: IRFp150 To3 package bu245a BR 1300
    Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50


    OCR Scan     		PDF OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 IRFp150 To3 package bu245a BR 1300

    diode c248

    Abstract: sef542 C246 SGSP381 SEF541 C-247 SEF543 C247 sgs*P381 C245
    Text: S G S-THOMSON 0 7 E 1 | 7 ^ 3 1 2 3 ? 0 0 1 6 0 2 5 3 ' 73C 17522 D /T SEF541 SEFS42 SEFS43 N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V D SS R D S ON) 60V 0.085 Q 27A 100 V/60V 0.11 24A SEF541 SEF542 These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SEF541 SEFS42 SEFS43 SEF542 SEF543 SEF542/SEF543 300/us, SEF541, SGSP381 SEF542/SEF543, diode c248 C246 C-247 C247 sgs*P381 C245

    irf520 mosfet

    Abstract: IRF521 IRF543FI IRF540FI IRF523 IRF530 mosfet IRF530FI IRF540 IRF540 smd MOSFET IRF540
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI irf520 mosfet IRF540FI IRF530 mosfet IRF530FI IRF540 IRF540 smd MOSFET IRF540

    IRF521

    Abstract: SGSP461 SGSP591 IRF540 smd SGSP381 IRF540FI sgsp321 BUZ11S2FI SGSP462 t0218
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI SGSP461 SGSP591 IRF540 smd SGSP381 IRF540FI sgsp321 BUZ11S2FI SGSP462 t0218

    pnp transistor 1000v

    Abstract: mos Turn-off Thyristor applications of mos controlled thyristor 1000V 2A BJT SGSP363
    Text: n ^ rz 7 # , S G S -T H O M S O N 5 [L [I T [H ] M D © Ì T E C H N IC A L N O TE AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS (High Injection MOS) devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


    OCR Scan     		PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    sef130

    Abstract: SEF130/SEF131
    Text: S G S-THÔHSON 0?E D I 7 C1 2 C\ B 3 7 r 73C 17462 D i C i u 'r N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS These products are diffused multi-cell silicon gate N-Channef enhancement mode Power-Mos field effect transistors. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF SEF131 SEF132. SEFI33 00V/60V 00V/60V jun/SEF131 SEF132/SEF133 SEF130/SEF131 300jiis, sef130