GG 06
Abstract: VN35010
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35
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UFN733
2N6759
SFN333
MTM5N35
MTP5N35
VN35010
GG 06
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Untitled
Abstract: No abstract text available
Text: 3QE » • 7^237 OQBQIMb 1 SCS-THOMSON * 15 ELEgTOMS L_.“ SGSP341 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 5 2 x5 3 mils METALLIZATION: Top Al Back A u/C r/N I/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils
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SGSP341
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Untitled
Abstract: No abstract text available
Text: 3 C ü T m d e S G S - 7 T ^ H 2 O 3 M 7 S O 2 ^ 7 3 t N * J i n, . li]0 ^©[l[L[E©TF^ Q i0(gi_ SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Ds s ^D S(on) SGSP341 400 V 20 ß 0.6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING
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SGSP341
T-39-07
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sgsp341
Abstract: No abstract text available
Text: / = T SGS-THOMSON SGSP341 CHIP HD g^ [l[L[l(g7^©MD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 52 x5 3 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox
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SGSP341
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Untitled
Abstract: No abstract text available
Text: 7 Æ 7 * # S . M G S ô - T m H i e O T M M S O O N Ê S S G S P 3 4 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on Id SGSP341 400 V 20 ß 0.6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
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SGSP341
O-220
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SGSP341
Abstract: No abstract text available
Text: rz7 SCS-THOMSON * IM, M Ê M itiÊ T M lIg S SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S on SGSP341 400 V 20 n Id 0.6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:
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SGSP341
O-220
SGSP341
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IRF740 smd
Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36
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IRF523
IRF523FI
IRF521
IRF521FI
IRF533
IRF533FI
IRF531
IRF531FI
IRF543
IRF543FI
IRF740 smd
tsd4m350v
TSD4M250V
SGSP363
irf740 mosfet
IRF540
SGSP461
tsd4m250
IRF823
SGS100MA010D1
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ISOWATT220
Abstract: No abstract text available
Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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O-220
ISOWATT220
ISOWATT22Q
STH107N50
STH10N50
STHI10N50
STHI10N50FI
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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P-220
ISOWATT220
O-220
O-220
STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
sgs*P381
ISOWATT218 IGBT
STLT20
MTP3055AFI
SGSP381
IRFP453FI
SGSP579
SGSP591
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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p341
Abstract: P241 sgsp240 SGSP241 SP140 SGSP141 sgsp341 p141 05 SGSP SGSP140
Text: 7^5^237 GQl7fln i S G S-THOMSON 07E 73C 1 7 3 1 6 7 '- 3 ^ - 0 7 HIGH SPEED SW IT C H IN G APPLICATIONS ' dm • (DLM (.) f\ot Tstg TJ R DS(ON) 3 5 0 V /4 0 0 V 20Q 0 .6 A 450V 25Q 0 .6 A TO-39 SOT-82 TO -220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KQ)
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SGSP14
/PI41/P142
SGSPZ40/P241/P242
SGSP340/P341/P342
SGSP142
SGSP242
SGSP342
OT-82
SGSP140
SGSP240
p341
P241
SGSP241
SP140
SGSP141
sgsp341
p141 05
SGSP
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TSD4M450V
Abstract: TSD4M250V IRF740 smd Isotop SGS100MA010D1 SGSP363 TSD4M150V IRF621 IRF621FI IRF622
Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100
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IRFP150
IRFP150FI
SGS100MA010D1
TSD4M150V
SGS150MA010D1
IRF623
IRF623FI
IRF621
IRF621FI
IRF622
TSD4M450V
TSD4M250V
IRF740 smd
Isotop
SGSP363
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
O-220
ISOWATT22Û
ISOWATT22Q
ISOWATT220
MTP3055AFI
IRF722FI
IRFP453FI
SGSP579
SGSP591
SGS35MA050D1
SGSP382
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IRFP 740
Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7
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IRF742FI
IRF740
IRF740FI
SGSP475
SGSP575
IRF350
IRFP350FI
TSD4M350V
IRF823
IRF823FI
IRFP 740
SGSP364
sgsp369
TSD4M250V
IRF 810
IRFP150
SGS100MA010D1
TSD4M351V
220 to 110 power
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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O-220
ISOWATT220
ISOWATT220
STH107N50
STH10N50
STHI10N50
STHI10N50FI
ISOWATT-220
mtp15n05
BU210A
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
IRFp150 To3 package
bu245a
BR 1300
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IRF740 smd
Abstract: TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF621 IRF621FI IRF622 IRF622FI
Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100
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IRFP150
IRFP150FI
SGS100MA010D1
TSD4M150V
SGS150MA010D1
IRF623
IRF623FI
IRF621
IRF621FI
IRF622
IRF740 smd
TSD4M250V
IRF6205
IRF722FI
SGS BUZ32
SGSP475
IRF622FI
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transistor D 667
Abstract: No abstract text available
Text: SGS-THOMSON ^ 7 # . lüülDa@imi g?SGSP341 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATIO N: Top Back BACKSIDE THICKNESS: D IE T H IC K N E S S : PASSIVATION: BONDING PAD SIZE: Source Gate 5 2 x 5 3 m ils
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SGSP341
transistor D 667
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