Untitled
Abstract: No abstract text available
Text: SGSP141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)0.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)
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SGSP141
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Untitled
Abstract: No abstract text available
Text: SGSP142 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V) I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)
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SGSP142
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GG 06
Abstract: VN35010
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35
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UFN733
2N6759
SFN333
MTM5N35
MTP5N35
VN35010
GG 06
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p341
Abstract: P241 sgsp240 SGSP241 SP140 SGSP141 sgsp341 p141 05 SGSP SGSP140
Text: 7^5^237 GQl7fln i S G S-THOMSON 07E 73C 1 7 3 1 6 7 '- 3 ^ - 0 7 HIGH SPEED SW IT C H IN G APPLICATIONS ' dm • (DLM (.) f\ot Tstg TJ R DS(ON) 3 5 0 V /4 0 0 V 20Q 0 .6 A 450V 25Q 0 .6 A TO-39 SOT-82 TO -220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KQ)
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SGSP14
/PI41/P142
SGSPZ40/P241/P242
SGSP340/P341/P342
SGSP142
SGSP242
SGSP342
OT-82
SGSP140
SGSP240
p341
P241
SGSP241
SP140
SGSP141
sgsp341
p141 05
SGSP
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SP249
Abstract: sgsp248 sgsp349 P249 P349 sgsp348 SGSP148
Text: S G S-TH O nSO N 73C 0 7 E 1 7 3 2 4" D D | 7 ^ 5 3 7 r - 3 ? - 0 0 1 7 0 2 7 0 7 > ^ Ì T l l Ì ? r'SGSP1487ÌP149 SGSP248/P249 SGSP348/P349 |*^ * N-CHANNEL POWER MOS TRANSISTORS " - ' - l i HIGH SPEED SW ITCHING APPLICATIONS ABSOLUTE M A X IM U M RATINGS
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SP1487
SGSP248/P249
SGSP348/P349
SP148
SP248
SP348
SP149
SP249
SP349
300/zs,
sgsp248
sgsp349
P249
P349
sgsp348
SGSP148
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