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    kkz 10

    Abstract: BUV48
    Text: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO­ WER MOS will, in many applications, gradually re­ place power bipolar devices due to the numerous


    OCR Scan     		SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48 PDF