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    SEMICONDUCTOR KHB9D5N20F Search Results

    SEMICONDUCTOR KHB9D5N20F Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR KHB9D5N20F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    semiconductor 9d5n20f

    Abstract: 9d5n20f khb 9d5n20f KHB9D5N20F 9D5N20 semiconductor KHB9d5n20f TO-220IS 15Item
    Text: SEMICONDUCTOR KHB9D5N20F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D5N20F 515 No. 2005. 11. 15 2 Item Marking Description Device Name KHB9D5N20F KHB9D5N20F Lot No. 515 Revision No : 1 5 Year 0~9 : 2000~2009 15


    Original     		PDF KHB9D5N20F O-220IS 9D5N20F semiconductor 9d5n20f 9d5n20f khb 9d5n20f KHB9D5N20F 9D5N20 semiconductor KHB9d5n20f TO-220IS 15Item

    9d5n20f

    Abstract: khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking
    Text: SEMICONDUCTOR KHB9D5N20F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D5N20F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB9D5N20F2 KHB9D5N20F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009


    Original     		PDF KHB9D5N20F2 O-220IS 9D5N20F 9d5n20f khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking

    khb9D5N20P

    Abstract: semiconductor KHB9d5n20f KHB9D5N20F khb*9D5N20P
    Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D5N20P/F/F2 KHB9D5N20P KHB9D5N20F KHB9D5N20F KHB9D5N20F2 khb9D5N20P semiconductor KHB9d5n20f khb*9D5N20P

    khb*9D5N20P

    Abstract: KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE
    Text: SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D5N20P1/F1/F2 KHB9D5N20P1 Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE

    KHB9D5N20F

    Abstract: khb*9D5N20P
    Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D5N20P/F/F2 KHB9D5N20P Fig15. Fig16. Fig17. KHB9D5N20F khb*9D5N20P

    khb*9D5N20P

    Abstract: KHB9D5N20F khb9D5N20P KHB9D5N20F2
    Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D5N20P/F/F2 KHB9D5N20P Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20F khb9D5N20P KHB9D5N20F2