9d5n20f
Abstract: khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking
Text: SEMICONDUCTOR KHB9D5N20F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D5N20F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB9D5N20F2 KHB9D5N20F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009
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KHB9D5N20F2
O-220IS
9D5N20F
9d5n20f
khb 9d5n20f
semiconductor 9d5n20f
9D5N20
KHB9D5N20F2
KHB9D5N20F
TO-220IS
laser
marking
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khb*9D5N20P
Abstract: KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE
Text: SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D5N20P1/F1/F2
KHB9D5N20P1
Fig15.
Fig16.
Fig17.
khb*9D5N20P
KHB9D5N20P1
KHB9D5N20F1
khb9D5N20P
KHB9D5N20F2
KHB9D5N20F
D 92 M - 02 DIODE
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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khb9D5N20P
Abstract: semiconductor KHB9d5n20f KHB9D5N20F khb*9D5N20P
Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D5N20P/F/F2
KHB9D5N20P
KHB9D5N20F
KHB9D5N20F
KHB9D5N20F2
khb9D5N20P
semiconductor KHB9d5n20f
khb*9D5N20P
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khb*9D5N20P
Abstract: KHB9D5N20F khb9D5N20P KHB9D5N20F2
Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D5N20P/F/F2
KHB9D5N20P
Fig15.
Fig16.
Fig17.
khb*9D5N20P
KHB9D5N20F
khb9D5N20P
KHB9D5N20F2
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KHB9D5N20F
Abstract: khb*9D5N20P
Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D5N20P/F/F2
KHB9D5N20P
Fig15.
Fig16.
Fig17.
KHB9D5N20F
khb*9D5N20P
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