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    KHB9D5N20F1 Datasheets (1)

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    KHB9D5N20F1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

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    KF5N50

    Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
    Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41


    Original     		OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50 PDF

    khb*9D5N20P

    Abstract: KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE
    Text: SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB9D5N20P1/F1/F2 KHB9D5N20P1 Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE PDF