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    SE 110N Search Results

    SE 110N Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ADUM110N0BRZ-RL7 Analog Devices 1 Channel 3kV Digital Isolator Visit Analog Devices Buy
    ADUM110N0BRZ Analog Devices 1 Channel 3kV Digital Isolator Visit Analog Devices Buy
    ADUM110N1BRZ Analog Devices 1 Channel 3kV Digital Isolator Visit Analog Devices Buy
    ADUM110N1BRZ-RL7 Analog Devices 1 Channel 3kV Digital Isolator Visit Analog Devices Buy

    SE 110N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SE110N Sanken Electric Error Amplifier ICs Original PDF
    SE110N Sanken Electric Error Amplifier IC Original PDF
    SE110N-T Allegro MicroSystems IC ERROR AMPLIFIER ICS Original PDF

    SE 110N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SE 130N

    Abstract: datasheet se 110n SE005N se 115n se 135n 1-30N 070N datasheet SE 125N SE 135 015N
    Text: •Error Amplifier ICs SE series Absolute Maximum Ratings (Ta=25°C) Part No. Collector-Ground Voltage Collector Current VCGO (V) Ic (mA) SE005N Operating Temperature TOP (°C) 12 Electrical Characteristics (Ta=25°C) Output Detection Voltage VS (V) Remarks


    Original     		PDF SE005N SE 130N datasheet se 110n SE005N se 115n se 135n 1-30N 070N datasheet SE 125N SE 135 015N

    Untitled

    Abstract: No abstract text available
    Text: Se a le d Y ESC 1 .5 x 0 .8 SPECI FI CAT I ON S Connector Male Terminal Female Terminal Operating Temperature Range Voltage Drop Isolation resistance Dielectric Resistance Material Applicable Wire Size Terminal Pitch Sealing Performance Air Leak Pressure


    Original     		PDF 500VDC, 1000VAC 22AWG 16AWG 48kPa 28kPa

    REL 561

    Abstract: abb fox 6 abb fox 20 SPA-ZC21 under ground cable fault distance locator ael 1200 abb "fox 6 plus" English Electric relay cage RK795 232-C
    Text: - REL 561 * 1.2 Line differential 1MRK 506 006-BEN Pan" 1 November 1997 Changed since October 1997 Dala subjecI lo change without nolice protec:tion terminal ABB Network Partner SE 95 02 12 Features .Phase segregated line differential protection .Current differential measurement evaluating


    Original     		PDF 006-BEN 295-CA 295-DA 078-AA 876-KA 876-EA 003-BEN 006-REN 1MRK511014-BEN 034-BEN REL 561 abb fox 6 abb fox 20 SPA-ZC21 under ground cable fault distance locator ael 1200 abb "fox 6 plus" English Electric relay cage RK795 232-C

    7116-4152-02

    Abstract: 7114-4152-02 7114-4150-02
    Text: Se a le d Y ESC 2 .8 x 0 .8 SPECI FI CAT I ON S Connector Male Terminal Female Terminal Operating Temperature Range Voltage Drop Isolation resistance Dielectric Resistance Material Applicable Wire Size Terminal Pitch Sealing Performance Air Leak Pressure


    Original     		PDF 500VDC, 1000VAC 22AWG 14AWG 48kPa 28kPa 7116-4152-02 7114-4152-02 7114-4150-02

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF 2N3723 ry10n

    GN01046B

    Abstract: No abstract text available
    Text: GaAs MMICs GN01046B GaAs IC with built-in ferroelectric For front-end amplifier of the PHS receiving section unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		PDF GN01046B GN01046B

    Untitled

    Abstract: No abstract text available
    Text: Low Pr ofile 3 0 W a t t Sin e W a ve Telephone Ring Generator 40REN@86Vrms to 100REN@45Vrms PC- R3 0 2 Se r ie s !" !" !" !" PCR- 3 0 2 - 9 2 5 PCR- 3 0 2 - 9 2 6 PCR- 3 0 2 - 8 2 5 PCR- 3 0 2 - 5 4 3 PC-R302 Series LOW PROFILE 30 Watt Sine Wave Telephone Ring Generator


    Original     		PDF 40REN 86Vrms 100REN 45Vrms PC-R302 45-86Vrms1 L-P-393A MIL-P-81390

    ADQ12

    Abstract: ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N S72NS-N 7d8l S72NS512ND0
    Text: S72NS-N Based MCPs Stacked Multi-Chip Product MCP MirrorBitTM Flash Memory & DRAM 128 Mb (8 M x 16 bit)/256 Mb (16 M x 16 bit), 110nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory and 128/256-Mb (8/16-M x 16-bit) DDR DRAM


    Original     		PDF S72NS-N 110nm 128/256-Mb 8/16-M 16-bit) S72NS128 256ND0 ADQ12 ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N 7d8l S72NS512ND0

    A2918SW

    Abstract: SLA7020M SMA7029M diode ry 10 A SE005N 2-Phase Stepper Motor Driver sla7021m
    Text: Error Amplifier ICs SE series Absolute Maximurrr Ratings TjfpeM o ^óflw ^or-Q round VoSage Collector Current V kso(V) lo(mA) SE 005N Electrical Characteristics Ta«-25'C * Operating Temperature T o p (C : 1 Remarks Output Defection VòRage V-(V> 12 5 .0 ± 0.1


    OCR Scan     		PDF SDK03M A2918SW 7230M SI-7502 SLA5011) SLA6503Ì SLA18Pm 20Pin 27Pin SLA7020M SMA7029M diode ry 10 A SE005N 2-Phase Stepper Motor Driver sla7021m

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE MODULE PC100F6 PD100F6 100A / 600V/trr:110nsec FEATURES 3-M5 SCREW -41 1.61 — o Isolated B a se o D ual D iodes - C athode Common :PC100F6 Doubler :PD100F6 o Super F a s t Recovery 20(079) • *41.5(163) tp - ; S .j . L o High Su rge C apability


    OCR Scan     		PDF PC100F6 PD100F6 00V/trr 110nsec PC100F PD100F bblS123

    Untitled

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM374F804BS Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F804BS Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF KMM374F804BS 8Mx72 4Mx16 74F804B KMM374F804BS x72bits

    2SK1214

    Abstract: 5N60 bt353 bt353s5 H3228
    Text: Power F-MOS FET 2SK1214 2SK1214 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R Ds on : RDs (on) l = 0 .0 6 f i (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 110ns (ty p .) • N o se c o n d a ry b re a k d o w n


    OCR Scan     		PDF 2SK1214 110ns bT353S5 0G17140 2SK1214 5N60 bt353 H3228

    NN5116

    Abstract: No abstract text available
    Text: NN511661 /NN511667series ED O Hyper Page Mode CM O S 64Kx 16bit Dynamic RAM NPN>a( D ESCRIPTIO N The NN511661/1667 se ries is a high performance CM OS Dynam ic Random A ccess Memory organized as 65,536 words by 16 bits. The NN511661/1667 series is fabricated with advanced CM OS technology and designed with innovative design


    OCR Scan     		PDF NN511661 /NN511667series 16bit NN511661/1667 QD01515 /A/571661 NN511667 NN5116

    Untitled

    Abstract: No abstract text available
    Text: M O SE L VITELIC PRELIMINARY V53C404H 1M x 4 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)


    OCR Scan     		PDF V53C404H 110ns cycles/16 26/20-pin

    RUR30120

    Abstract: MOSFET 1200v 30a
    Text: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons


    OCR Scan     		PDF RUR30120 110ns) 1-800-4-HARRIS RUR30120 MOSFET 1200v 30a

    AVW12

    Abstract: No abstract text available
    Text: M O SE L V IT EL IC V53C16258H 2 5 6 K X 16 PAG E MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE Max. RAS Access Time, tRAC Max. Column Address Access Time, O caa) PRELIM INARY 40 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns


    OCR Scan     		PDF V53C16258H 110ns 16-bit 16258H 40-pin AVW12

    2SK1796

    Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
    Text: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id


    OCR Scan     		PDF 2SK1772 2SK1773 2SK1774 2SK1775 2SK1784 30nstyp 2SK183S 25nstyp 2SK1834 105ns 2SK1796 2SK1804 2SK1713 2SK1794 2SK1785

    trw 810

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM374F80 8 3BK1 Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F80(8)3BK1 Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Rem oved tw o A C param eters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .


    OCR Scan     		PDF KMM374F80 8Mx72 374F80 8Mx72bits 400mil 08Max) trw 810

    Untitled

    Abstract: No abstract text available
    Text: KM41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,194,304 x 1 bit Static C olum n M ode CM O S DRAM s. Static C olum n M ode offers high speed random or se q u en tia l access of m em ory cells w ithin th e sam e row. A ccess tim e -5, -6, -7 or -8 and


    OCR Scan     		PDF KM41C4002C

    28F400B1

    Abstract: TS0P48
    Text: PRELIMINARY MICRON MT28F400B1 256K x 16 512K x 8 F L A S H M EM O RY I FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Sev en era se b lo ck s: 1 6 K B /8 K -w o rd b o o t blo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s


    OCR Scan     		PDF MT28F400B1 110ns, 150ns 16-bit 28F400B1 TS0P48

    Micron Quantum Devices

    Abstract: No abstract text available
    Text: ADVANCE MT28SF200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Fiv e era se blocks: 1 6 K B /8 K -w o rd bo o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m eter b lo ck s T w o m ain m em o ry b lo ck s


    OCR Scan     		PDF MT28SF200 100ns 110ns, 150ns 16-bit MT2SSF200 Micron Quantum Devices

    siliconix an603

    Abstract: No abstract text available
    Text: T em ic AN603 Siliconix Designing With the SÌ9978DW Configurable H-Bridge Controller C u rren tly , th e re a rc a n u m b e r o f fully in te g ra te d H -b rid g es o n th e m a rk e t. B o th b ip o la r an d M O S tech n o lo g ies have b e en u sed to c rc a tc th e se p arts.


    OCR Scan     		PDF AN603 9978DW Si9978D Si9978DW siliconix an603

    DINA 6

    Abstract: 10005G
    Text: 1 I u se d for: M ic ro T C A P O W ER CO NNECTOR 23.3±0.2 & 4444 - r o t n f t - -tftt 4444 m i ttft- -tftt m [m] i : l4 4 4 ttft- -tftt 444 4 -444 - - m 11.871 m r^i 0O.6O±O.O5 TYP 100.05 g I X I ^ Y n n m E A F T E R PLA TIN G 7 PLC R E C O M M E N D E D PC B O A R D D IM E N S IO N S


    OCR Scan     		PDF 47K1A00002 DINA 6 10005G

    2048x8 RAM

    Abstract: 6216 static ram
    Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec


    OCR Scan     		PDF 2048x8 S10307FDS 110ns MA6116) MA6216) 5x10s 5x1010 100pA ma6H6/6216 2048x8 RAM 6216 static ram