SE 130N
Abstract: datasheet se 110n SE005N se 115n se 135n 1-30N 070N datasheet SE 125N SE 135 015N
Text: •Error Amplifier ICs SE series Absolute Maximum Ratings (Ta=25°C) Part No. Collector-Ground Voltage Collector Current VCGO (V) Ic (mA) SE005N Operating Temperature TOP (°C) 12 Electrical Characteristics (Ta=25°C) Output Detection Voltage VS (V) Remarks
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SE005N
SE 130N
datasheet se 110n
SE005N
se 115n
se 135n
1-30N
070N
datasheet SE 125N
SE 135
015N
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Untitled
Abstract: No abstract text available
Text: Se a le d Y ESC 1 .5 x 0 .8 SPECI FI CAT I ON S Connector Male Terminal Female Terminal Operating Temperature Range Voltage Drop Isolation resistance Dielectric Resistance Material Applicable Wire Size Terminal Pitch Sealing Performance Air Leak Pressure
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500VDC,
1000VAC
22AWG
16AWG
48kPa
28kPa
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REL 561
Abstract: abb fox 6 abb fox 20 SPA-ZC21 under ground cable fault distance locator ael 1200 abb "fox 6 plus" English Electric relay cage RK795 232-C
Text: - REL 561 * 1.2 Line differential 1MRK 506 006-BEN Pan" 1 November 1997 Changed since October 1997 Dala subjecI lo change without nolice protec:tion terminal ABB Network Partner SE 95 02 12 Features .Phase segregated line differential protection .Current differential measurement evaluating
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006-BEN
295-CA
295-DA
078-AA
876-KA
876-EA
003-BEN
006-REN
1MRK511014-BEN
034-BEN
REL 561
abb fox 6
abb fox 20
SPA-ZC21
under ground cable fault distance locator
ael 1200
abb "fox 6 plus"
English Electric relay cage
RK795
232-C
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7116-4152-02
Abstract: 7114-4152-02 7114-4150-02
Text: Se a le d Y ESC 2 .8 x 0 .8 SPECI FI CAT I ON S Connector Male Terminal Female Terminal Operating Temperature Range Voltage Drop Isolation resistance Dielectric Resistance Material Applicable Wire Size Terminal Pitch Sealing Performance Air Leak Pressure
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500VDC,
1000VAC
22AWG
14AWG
48kPa
28kPa
7116-4152-02
7114-4152-02
7114-4150-02
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PDF
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Untitled
Abstract: No abstract text available
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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2N3723
ry10n
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GN01046B
Abstract: No abstract text available
Text: GaAs MMICs GN01046B GaAs IC with built-in ferroelectric For front-end amplifier of the PHS receiving section unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN01046B
GN01046B
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Untitled
Abstract: No abstract text available
Text: Low Pr ofile 3 0 W a t t Sin e W a ve Telephone Ring Generator 40REN@86Vrms to 100REN@45Vrms PC- R3 0 2 Se r ie s !" !" !" !" PCR- 3 0 2 - 9 2 5 PCR- 3 0 2 - 9 2 6 PCR- 3 0 2 - 8 2 5 PCR- 3 0 2 - 5 4 3 PC-R302 Series LOW PROFILE 30 Watt Sine Wave Telephone Ring Generator
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40REN
86Vrms
100REN
45Vrms
PC-R302
45-86Vrms1
L-P-393A
MIL-P-81390
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ADQ12
Abstract: ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N S72NS-N 7d8l S72NS512ND0
Text: S72NS-N Based MCPs Stacked Multi-Chip Product MCP MirrorBitTM Flash Memory & DRAM 128 Mb (8 M x 16 bit)/256 Mb (16 M x 16 bit), 110nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory and 128/256-Mb (8/16-M x 16-bit) DDR DRAM
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S72NS-N
110nm
128/256-Mb
8/16-M
16-bit)
S72NS128
256ND0
ADQ12
ADQ14
Multi-Chip Package MEMORY
F12 MARK
MICRON mcp
NS512
S29NS-N
7d8l
S72NS512ND0
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A2918SW
Abstract: SLA7020M SMA7029M diode ry 10 A SE005N 2-Phase Stepper Motor Driver sla7021m
Text: Error Amplifier ICs SE series Absolute Maximurrr Ratings TjfpeM o ^óflw ^or-Q round VoSage Collector Current V kso(V) lo(mA) SE 005N Electrical Characteristics Ta«-25'C * Operating Temperature T o p (C : 1 Remarks Output Defection VòRage V-(V> 12 5 .0 ± 0.1
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SDK03M
A2918SW
7230M
SI-7502
SLA5011)
SLA6503Ì
SLA18Pm
20Pin
27Pin
SLA7020M
SMA7029M
diode ry 10 A
SE005N
2-Phase Stepper Motor Driver
sla7021m
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PDF
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE MODULE PC100F6 PD100F6 100A / 600V/trr:110nsec FEATURES 3-M5 SCREW -41 1.61 — o Isolated B a se o D ual D iodes - C athode Common :PC100F6 Doubler :PD100F6 o Super F a s t Recovery 20(079) • *41.5(163) tp - ; S .j . L o High Su rge C apability
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PC100F6
PD100F6
00V/trr
110nsec
PC100F
PD100F
bblS123
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Untitled
Abstract: No abstract text available
Text: DRAM M ODULE KMM374F804BS Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F804BS Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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KMM374F804BS
8Mx72
4Mx16
74F804B
KMM374F804BS
x72bits
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PDF
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2SK1214
Abstract: 5N60 bt353 bt353s5 H3228
Text: Power F-MOS FET 2SK1214 2SK1214 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R Ds on : RDs (on) l = 0 .0 6 f i (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 110ns (ty p .) • N o se c o n d a ry b re a k d o w n
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2SK1214
110ns
bT353S5
0G17140
2SK1214
5N60
bt353
H3228
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PDF
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NN5116
Abstract: No abstract text available
Text: NN511661 /NN511667series ED O Hyper Page Mode CM O S 64Kx 16bit Dynamic RAM NPN>a( D ESCRIPTIO N The NN511661/1667 se ries is a high performance CM OS Dynam ic Random A ccess Memory organized as 65,536 words by 16 bits. The NN511661/1667 series is fabricated with advanced CM OS technology and designed with innovative design
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NN511661
/NN511667series
16bit
NN511661/1667
QD01515
/A/571661
NN511667
NN5116
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Untitled
Abstract: No abstract text available
Text: M O SE L VITELIC PRELIMINARY V53C404H 1M x 4 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)
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V53C404H
110ns
cycles/16
26/20-pin
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PDF
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RUR30120
Abstract: MOSFET 1200v 30a
Text: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons
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RUR30120
110ns)
1-800-4-HARRIS
RUR30120
MOSFET 1200v 30a
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PDF
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AVW12
Abstract: No abstract text available
Text: M O SE L V IT EL IC V53C16258H 2 5 6 K X 16 PAG E MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE Max. RAS Access Time, tRAC Max. Column Address Access Time, O caa) PRELIM INARY 40 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns
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V53C16258H
110ns
16-bit
16258H
40-pin
AVW12
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PDF
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2SK1796
Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
Text: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id
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2SK1772
2SK1773
2SK1774
2SK1775
2SK1784
30nstyp
2SK183S
25nstyp
2SK1834
105ns
2SK1796
2SK1804
2SK1713
2SK1794
2SK1785
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PDF
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trw 810
Abstract: No abstract text available
Text: DRAM M ODULE KMM374F80 8 3BK1 Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F80(8)3BK1 Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Rem oved tw o A C param eters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .
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KMM374F80
8Mx72
374F80
8Mx72bits
400mil
08Max)
trw 810
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PDF
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Untitled
Abstract: No abstract text available
Text: KM41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,194,304 x 1 bit Static C olum n M ode CM O S DRAM s. Static C olum n M ode offers high speed random or se q u en tia l access of m em ory cells w ithin th e sam e row. A ccess tim e -5, -6, -7 or -8 and
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KM41C4002C
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28F400B1
Abstract: TS0P48
Text: PRELIMINARY MICRON MT28F400B1 256K x 16 512K x 8 F L A S H M EM O RY I FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Sev en era se b lo ck s: 1 6 K B /8 K -w o rd b o o t blo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s
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MT28F400B1
110ns,
150ns
16-bit
28F400B1
TS0P48
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PDF
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Micron Quantum Devices
Abstract: No abstract text available
Text: ADVANCE MT28SF200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Fiv e era se blocks: 1 6 K B /8 K -w o rd bo o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m eter b lo ck s T w o m ain m em o ry b lo ck s
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MT28SF200
100ns
110ns,
150ns
16-bit
MT2SSF200
Micron Quantum Devices
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PDF
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siliconix an603
Abstract: No abstract text available
Text: T em ic AN603 Siliconix Designing With the SÌ9978DW Configurable H-Bridge Controller C u rren tly , th e re a rc a n u m b e r o f fully in te g ra te d H -b rid g es o n th e m a rk e t. B o th b ip o la r an d M O S tech n o lo g ies have b e en u sed to c rc a tc th e se p arts.
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AN603
9978DW
Si9978D
Si9978DW
siliconix an603
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DINA 6
Abstract: 10005G
Text: 1 I u se d for: M ic ro T C A P O W ER CO NNECTOR 23.3±0.2 & 4444 - r o t n f t - -tftt 4444 m i ttft- -tftt m [m] i : l4 4 4 ttft- -tftt 444 4 -444 - - m 11.871 m r^i 0O.6O±O.O5 TYP 100.05 g I X I ^ Y n n m E A F T E R PLA TIN G 7 PLC R E C O M M E N D E D PC B O A R D D IM E N S IO N S
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47K1A00002
DINA 6
10005G
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PDF
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2048x8 RAM
Abstract: 6216 static ram
Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec
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2048x8
S10307FDS
110ns
MA6116)
MA6216)
5x10s
5x1010
100pA
ma6H6/6216
2048x8 RAM
6216 static ram
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