RUR30120
Abstract: RURP30120
Text: RURP30120 Data Sheet January 2000 File Number 3397.3 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar
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RURP30120
RURP30120
110ns)
110ns
RUR30120
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RUR30120
Abstract: RURP30120
Text: RURP30120 S E M I C O N D U C T O R 30A, 1200V Ultrafast Diode April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <110ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURP30120
110ns
O-220AC
110ns)
RUR30120
RURP30120
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RURP30120
Abstract: RUR30120
Text: RURP30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP30120
RURP30120
110ns)
110ns
175oC
RUR30120
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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RUR30120
Abstract: RURP30120
Text: RURP30120 Data Sheet January 2000 File Number 3397.3 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar
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Original
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PDF
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RURP30120
RURP30120
110ns)
110ns
RUR30120
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RUR30120
Abstract: MOSFET 1200v 30a
Text: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons
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OCR Scan
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PDF
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RUR30120
110ns)
1-800-4-HARRIS
RUR30120
MOSFET 1200v 30a
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Untitled
Abstract: No abstract text available
Text: H A R R IS X RURP30120 Semiconductor 30A, 1200V Ultrafast Diode April 1995 Features Package • U Itrafast with Soft JEDEC TQ-220AC • Operating
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RURP30120
110ns
TQ-220AC
110ns)
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