GHZ micro-X ceramic Package
Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-10736
ATF-10736
5965-8698E
GHZ micro-X ceramic Package
ATF-10736-STR
ATF-10736-TR1
10736
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ATF-13100
Abstract: ATF-13100-GP3 atf13100 2-18 GHz Low Noise Gallium Arsenide FET
Text: 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-13100
ATF-13100
proc56
ATF-13100-GP3
atf13100
2-18 GHz Low Noise Gallium Arsenide FET
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ATF-26836
Abstract: ATF-26836-STR ATF-26836-TR1 gaas fet micro-X Package
Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features Description • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-26836
ATF-26836
ATF-26836-STR
ATF-26836-TR1
gaas fet micro-X Package
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PDF
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ATF-10736
Abstract: ATF-10736-STR ATF-10736-TR1 ATF10
Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features Description • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective
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ATF-10736
ATF-10736
ATF-10736-STR
ATF-10736-TR1
ATF10
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ATF-13736
Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective
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ATF-13736
ATF-13736
5965-8722E
5967-5771E
DB1415
ATF-13736-STR
ATF-13736-TR1
ATF13736
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PDF
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ATF-13336
Abstract: No abstract text available
Text: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise
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ATF-13336
ATF-13336
5965-8724E
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8724e
Abstract: P 55 NFO ATF-13336 ATF-13336-STR ATF-13336-TR1 gaas fet micro-X Package
Text: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise
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ATF-13336
ATF-13336
8724e
P 55 NFO
ATF-13336-STR
ATF-13336-TR1
gaas fet micro-X Package
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Untitled
Abstract: No abstract text available
Text: SGL34-20 THRU SGL34-60 o 0.8 AMP SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS VOLTAGE RANGE 20 to60Volts CURRENT 0.8Ampere FEATURES *Lowforwardvoltagedrop *Lowleakagecurrent *Highreliability DO-213AA GL34 MECHANICAL DATA .14(3.6) .13(3.3) SOLDERABLE ENDS .015(.4)
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SGL34-20
SGL34-60
to60Volts
DO-213AA
UL94V-0rateflameretardant
015grams
PulseWidth300us
NUMBEROFCYCLESAT60Hz
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ATF-13736
Abstract: ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package
Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective
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Original
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ATF-13736
ATF-13736
ATF-13736-STR
ATF-13736-TR1
gaas fet micro-X Package
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PDF
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Untitled
Abstract: No abstract text available
Text: SGL34-20 THRU SGL34-60 o 0.8 AMP SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS VOLTAGE RANGE 20 to60Volts CURRENT 0.8Ampere FEATURES *Lowforwardvoltagedrop *Lowleakagecurrent *Highreliability DO-213AA GL34 MECHANICAL DATA .14(3.6) .13(3.3) SOLDERABLE ENDS .015(.4)
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SGL34-20
SGL34-60
to60Volts
DO-213AA
UL94V-0rateflameretardant
015grams
deratecurrentby20%
PulseWidth300us
NUMBEROFCYCLESAT60Hz
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8724e
Abstract: ATF-13336-TR1 ATF13336-STR gaas fet micro-X Package ATF-13336 ATF-13336-STR P1 260 ATF
Text: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise
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Original
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ATF-13336
ATF-13336
5965-8724E
8724e
ATF-13336-TR1
ATF13336-STR
gaas fet micro-X Package
ATF-13336-STR
P1 260 ATF
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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Original
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ATF-26836
ATF-26836
5965-8704E
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PDF
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Untitled
Abstract: No abstract text available
Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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Original
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ATF-10736
ATF-10736
5965-8698E
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PDF
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gaas fet micro-X Package
Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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Original
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ATF-26836
ATF-26836
metallizati200
5965-8704E
gaas fet micro-X Package
ATF-26836-STR
ATF-26836-TR1
oscillator 77 GHZ
atf26836tr1
ATF26836-STR
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PDF
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Untitled
Abstract: No abstract text available
Text: 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-13100
ATF-13100
5965-8694E
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F2683
Abstract: No abstract text available
Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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TF-26836
ATF-26836
5965-8704E
44475A4
DD1771Ö
F2683
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Untitled
Abstract: No abstract text available
Text: L ALLEGRO MI C R O S Y S T E M S INC =13 » 0SD433Û G0037ÖD IALGR T-91-01 PROCESS BKF Process BKF Schottky Diode P roce ss B K F is a high-speed silicon Schottkybarrier diode. It has a typical breakdown-voltage rat ing of 7 0 V and can operate with up to 200 m A of
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0SD433Ã
G0037Ã
T-91-01
10M-A
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Untitled
Abstract: No abstract text available
Text: W hnì HEW LETT m L'fià P A C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13336 Features D escription • Low N oise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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OCR Scan
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ATF-13336
ATF-13336
44475A4
0D17baS
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PDF
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Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD 0.5-12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 F e atu res D escription • High A ssociated Gain: 13.0 dB Typical at 4 GHz The ATF-10736isa high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-10736
ATF-10736isa
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PDF
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A1058
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 050433A 0003778 0 ■ AL GR T-91-01 PROCESS BKA Process BKA Schottky Diode Process BKA is a silicon high-speed Schottkybarrier junction diode. It has a typical breakdownvoltage rating of 60 V and can operate with a forward
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OCR Scan
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0DG377Ã
T-91-01
-H057
A1058
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PDF
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ATF-13736
Abstract: No abstract text available
Text: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor m ance gallium arsenide Schottkybarrier-gate field effect transistor
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OCR Scan
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ATF-13736
ATF-13736
5965-8722E
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PDF
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CJ 4148
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D 050433Û 000377=1 H • T-91-01 PROCESS BKD Process BKD Schottky Diode Process BKD is a silicon, high-speed Schottkybarrier junction diode with a typical breakdown-voltage rating of 80 V. It can sustain forward currents of up
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T-91-01
111UU
CJ 4148
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Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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OCR Scan
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ATF-26836
ATF-26836
sy-25
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L20r
Abstract: No abstract text available
Text: TIBPAL20L8-20M, TIBPAL20R4 20M, T1BPAL20RB-20M, T1BPAL20R8 20M TIBPAL20L8-15C, TIBPAL20R4-15C, TIBPAL20R615C, TIBPAL20R8 15C HIGH PERFORMANCE IMPACT1*PAL CIRCUITS D 2 9 2 0 , JUNE 1 9 8 6 -R E V IS E D DECEMBER 1 9 8 7 • High Performance: fmax feedback
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TIBPAL20L8-20M,
TIBPAL20R4
T1BPAL20RB-20M,
T1BPAL20R8
TIBPAL20L8-15C,
TIBPAL20R4-15C,
TIBPAL20R615C,
TIBPAL20R8
TIBPAL20R'
L20r
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