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    ATF10 Price and Stock

    My Cable Mart FE-VGATF-10

    10ft VGA Thin w/Ferrites M/M Cbl
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    DigiKey FE-VGATF-10 Bulk 100 1
    • 1 $10.86
    • 10 $9.12
    • 100 $8.22
    • 1000 $7.59
    • 10000 $7.43
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    Taitien Electronics Co Ltd TLEARKJATF-10.000000

    XTAL OSC VCTCXO 10MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TLEARKJATF-10.000000 20
    • 1 -
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    • 100 $34.652
    • 1000 $34.652
    • 10000 $34.652
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    Taitien Electronics Co Ltd TLEAMLJATF-10.000000

    XTAL OSC VCTCXO 10MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TLEAMLJATF-10.000000 1
    • 1 $45.45
    • 10 $39.31
    • 100 $34.9125
    • 1000 $34.9125
    • 10000 $34.9125
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    NIC Components Corp NATF101M16V6.3X6.3NLBYF

    Surface Mount Aluminum Electrolytic Capacitors - Tape and Reel (Alt: NATF101M16V6.3X6.3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NATF101M16V6.3X6.3NLBYF Reel 13 Weeks 5,000
    • 1 -
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    • 10000 $0.1477
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    NIC Components Corp NATF101M50V8X10.8NLBYF

    Surface Mount Aluminum Electrolytic Capacitors - Tape and Reel (Alt: NATF101M50V8X10.8N)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NATF101M50V8X10.8NLBYF Reel 14 Weeks 1,500
    • 1 -
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    • 10000 $0.22168
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    Find more ATF10 price and stock on Findchips.com

    ATF10 Datasheets (108)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ATF-10100 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10100-GP3 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10100-GP3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10135 Avantek 2-12 GHz Low Noise Gallium Arsenide FET Scan PDF
    ATF10135 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF10136 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10136-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10136-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10136-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10170 Avantek Gallium Arsenide FET Scan PDF
    ATF10170 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10235 Avantek 2-12 GHz Low Noise Gallium Arsenide FET Scan PDF
    ATF10235 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF10236 Agilent Technologies 0.5?12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10236 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10236 Avantek TRANSISTOR,JFET,N-CHANNEL,70MA I(DSS),MICRO-X Scan PDF

    ATF10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ANSALDO THYRISTOR

    Abstract: ATF1047
    Text: ANSALDO Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori FAST SWITCHING THYRISTOR ATF1047 FINAL SPECIFICATION Repetitive voltage up to


    Original     		PDF ATF1047 ANSALDO THYRISTOR ATF1047

    ATF1047

    Abstract: ATF1047s
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF1047 FINAL SPECIFICATION


    Original     		PDF ATF1047 ATF1047 ATF1047s

    ANSALDO THYRISTOR

    Abstract: ATF1040
    Text: ANSALDO Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori FAST SWITCHING THYRISTOR ATF1040 FINAL SPECIFICATION Repetitive voltage up to


    Original     		PDF ATF1040 ANSALDO THYRISTOR ATF1040

    ATF1040

    Abstract: TO 48 THYRISTOR FAST SWITCHING
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF1040 FINAL SPECIFICATION


    Original     		PDF ATF1040 ATF1040 TO 48 THYRISTOR FAST SWITCHING

    ATF-10136

    Abstract: gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		PDF ATF-10136 ATF-10136 5965-8701E gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136

    gaas fet micro-X Package

    Abstract: ATF-10236 36 Micro-X ATF-10236-STR ATF-10236-TR1 GA109 10236
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    Original     		PDF ATF-10236 ATF-10236 5965-8697E gaas fet micro-X Package 36 Micro-X ATF-10236-STR ATF-10236-TR1 GA109 10236

    GHZ micro-X ceramic Package

    Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		PDF ATF-10736 ATF-10736 5965-8698E GHZ micro-X ceramic Package ATF-10736-STR ATF-10736-TR1 10736

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100

    ATF-10100

    Abstract: ATF-10100-GP3 ATF10100
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise


    Original     		PDF ATF-10100 ATF-10100 ATF-10100-GP3 ATF10100

    ATF-10136-TR1

    Abstract: ATF-10136 ATF-10136-STR 36 Micro-X
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		PDF ATF-10136 ATF-10136 ATF-10136-TR1 ATF-10136-STR 36 Micro-X

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original     		PDF ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet

    ATF-10736

    Abstract: ATF-10736-STR ATF-10736-TR1 ATF10
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features Description • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective


    Original     		PDF ATF-10736 ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF10

    Untitled

    Abstract: No abstract text available
    Text: Low Noise Gallium Arsenide FET Reliability Data ATF-10XXX ATF-13XXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the


    Original     		PDF ATF-10XXX ATF-13XXX MIL-STD-883. Ambie11 5966-0233E 5966-2942E

    NE24483

    Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC


    Original     		PDF S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119

    ATF-10100

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz


    OCR Scan     		PDF TF-10100 ATF-10100

    Untitled

    Abstract: No abstract text available
    Text: What mLliM HEWLETT* PACKARD 0.5-12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features • High Associated Gain: 13.0 dB Typical at 4 GHz • Low Bias: VDS = 2V,IDS=25 mA • High Output Power: 20.0 dBm typical PldB at 4 GHz • Low Noise Figure:


    OCR Scan     		PDF ATF-10736 ATF-10736isa

    ATF-10135

    Abstract: Avantek 10135 ATF10135 avantek ATF101
    Text: GbE D I AVANTEK INC AVANTEK im n b fa 00G 5% 4 4 | T-31-25 ATF-10135 2-12 GHz Low Noise Gallium Arsenide FET Avantek micro-X Package Features • Low Noise Figure 0.5 dB typical at 4 GHz • Low Bias V d s = 2 V , I d s = 2 0 mA • High Associated Gain


    OCR Scan     		PDF T-31-25 ATF-10135 ATF-10135 Avantek 10135 ATF10135 avantek ATF101

    25C1815

    Abstract: No abstract text available
    Text: WhoI ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET H EW LETT WL'HM PACKARD Features • • • • Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA High Assosiated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical


    OCR Scan     		PDF ATF-10100 nit122 25C1815

    W1A sot23 transistor

    Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
    Text: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.


    OCR Scan     		PDF

    S parameters for ATF 10136

    Abstract: AVANTEK transistor Avantek atf-1323
    Text: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-10136 0D0kiS35 31O-371-0717or31O-371-8478 S parameters for ATF 10136 AVANTEK transistor Avantek atf-1323

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA


    OCR Scan     		PDF ATF-10100 T31-2S AVANTEK transistor

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC Ot.E D im n b t. OGGSibt. ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET 0AVANTEK Ö | T-31-25 Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-10235 T-31-25

    R68560P

    Abstract: D718A Rockwell R68560 ats38 R68560 rockwell collins connector 608 AE442 4800Q modem v.32 25BIS
    Text: o RC9696AC-E Modem Designer’s Guide Rockwell Table of Contents 1 2 3 4 S u m m a r y . 1 1.1 F e a tu re s . 1


    OCR Scan     		PDF RC9696AC-E R68560P D718A Rockwell R68560 ats38 R68560 rockwell collins connector 608 AE442 4800Q modem v.32 25BIS

    KY 500 ATX

    Abstract: rc144dpg rockwell l39
    Text: RC144ACG Modem Designer’s Guide Preliminary Rockwell International Digital Communications Division 1993 Rockwell International All Rights Reserved Printed in U.S.A. Order No.1008 December 10,1993 RC144ACG Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility


    OCR Scan     		PDF RC144ACG KY 500 ATX rc144dpg rockwell l39