IDW40G120C5B
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW40G120C5B
IDW40G120C5B
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Untitled
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW20G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW20G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW20G120C5B
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BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
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BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
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1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a
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M3D891
1PS10SB63
OD882
MDB391
SCA75
613514/01/pp7
1PS10SB63
MARKING S4 diode schottky
MLE118
S4 DIODE schottky
Schottky barrier sot-23 Marking s4
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d02s60c
Abstract: Infineon power diffusion process Schottky diode TO220 ThinQ JESD22 d02s60
Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the
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IDV02S60C
IDVxxS60C
O220FullPAK
d02s60c
Infineon power diffusion process
Schottky diode TO220
ThinQ
JESD22
d02s60
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the
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IDV02S60C
IDVxxS60C
O220FullPAK
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ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10mA DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
Schottky Diode 40V 1A
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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ZLLS400
Abstract: ZLLS400TA ZHCS400 ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
OD323
swit26100
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ZLLS400TA
ZHCS400
ZLLS400TC
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ZLLS400
Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
IR610
ZHCS400
ZLLS400TA
ZLLS400TC
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SDT10S60
Abstract: No abstract text available
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
P-TO220-2-2.
D10S60
Q67040S4643
SDT10S60
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ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC FSM12
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
FSM12
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1PS10SB82
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB82 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB82 FEATURES DESCRIPTION • Low forward voltage An epitaxial Schottky barrier diode encapsulated in a
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M3D891
1PS10SB82
OD882
MDB391
SCA75
613514/01/pp7
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D10S60
Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
PG-TO220-2-2.
D10S60
Q67040S4643
PG-TO-220-2-2
D10S60
DIODE 200A 600V schottky
PG-TO-220-2-2
Schottky diode TO220
SDT10S60
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D10S60
Abstract: pg-to220-2-2
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
PG-TO220-2-2.
Q67040S4643
D10S60
D10S60
pg-to220-2-2
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
OD882
MDB391
SCA75
613514/01/pp8
S3 DIODE schottky
SOD882
S3 marking DIODE
BAT54L
Marking s3 Schottky barrier
Marking "s3" Schottky barrier
MARKING C SOD882
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Schottky Diode 40V 2A
Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schottky Diode 40V 2A
marking ma sot23-6
ZHCS2000
320 sot236
ZLLS1000TA
ZLLS1000TC
ZLLS2000
marking L10
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MARKING C SOD882
Abstract: nxp Standard Marking
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
MDB391
BAT54L
OD882
613514/01/pp7
771-BAT54L-T/R
MARKING C SOD882
nxp Standard Marking
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