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    D10S60 Search Results

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    D10S60 Price and Stock

    Samtec Inc IDSD-10-S-60.00

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-10-S-60.00 Bulk 1
    • 1 $16.73
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    Avnet Americas IDSD-10-S-60.00 Bulk 1
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    Mouser Electronics IDSD-10-S-60.00
    • 1 $16.73
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    Newark IDSD-10-S-60.00 Bulk 1
    • 1 $22.1
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    Master Electronics IDSD-10-S-60.00
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    Sager IDSD-10-S-60.00 1
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    Samtec Inc HCSD-10-S-60.00-01

    IDC SOCKET AND TERMINAL CABLE AS
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    DigiKey HCSD-10-S-60.00-01 Bulk 1
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    Avnet Americas HCSD-10-S-60.00-01 Bulk 1
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    Mouser Electronics HCSD-10-S-60.00-01
    • 1 $18.02
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    Master Electronics HCSD-10-S-60.00-01
    • 1 $22.55
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    Sager HCSD-10-S-60.00-01 1
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    Samtec Inc TCMD-10-S-60.00-01

    2MM DOUBLE ROW MALE IDC ASSEMBLY
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    DigiKey TCMD-10-S-60.00-01 Bulk 1
    • 1 $14.88
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    Avnet Americas TCMD-10-S-60.00-01 Bulk 1
    • 1 $14.88
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    Mouser Electronics TCMD-10-S-60.00-01
    • 1 $14.88
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    Newark TCMD-10-S-60.00-01 Bulk 1
    • 1 $20.16
    • 10 $18.75
    • 100 $11.33
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    Master Electronics TCMD-10-S-60.00-01
    • 1 $18.62
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    Sager TCMD-10-S-60.00-01 1
    • 1 $14.88
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    • 100 $11.11
    • 1000 $10.41
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    Samtec Inc TCSD-10-S-60.00-01

    2MM DOUBLE ROW FEMALE IDC ASSEMB
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    DigiKey TCSD-10-S-60.00-01 Bulk 1
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    Mouser Electronics TCSD-10-S-60.00-01
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    Newark TCSD-10-S-60.00-01 Bulk 1
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    Samtec Inc IDSD-10-S-60.00-ST2

    SLIM BODY DOUBLE-ROW IDC SOCKET
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    DigiKey IDSD-10-S-60.00-ST2 Bulk 1
    • 1 $18.05
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    Mouser Electronics IDSD-10-S-60.00-ST2
    • 1 $25.66
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    D10S60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IDB10S60C

    Abstract: PG-TO220-3-45 D10S60C JESD22
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22

    D10S60C

    Abstract: IDH10S60C JESD22
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C PG-TO220-2 D10S60C D10S60C IDH10S60C JESD22

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO263-3-2) D10S60C

    D10S60C

    Abstract: IDB10S60C JESD22 D10S60
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45) D10S60C D10S60C IDB10S60C JESD22 D10S60

    D10S60C

    Abstract: IDT10S60C JESD22
    Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT10S60C PG-TO220-2-2 D10S60C PG-TO220-2-2: D10S60C IDT10S60C JESD22

    AN 22022

    Abstract: No abstract text available
    Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery


    Original     		PDF SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 AN 22022

    d10s60c

    Abstract: No abstract text available
    Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT10S60C PG-TO220-2-2 IDT10S60C PG-TO220-2-2 D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45 D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45) D10S60C

    d10s60c

    Abstract: W6015 IDT10S60C JESD22
    Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT10S60C PG-TO220-2-2 D10S60C d10s60c W6015 IDT10S60C JESD22

    SDT10S60

    Abstract: No abstract text available
    Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery


    Original     		PDF SDT10S60 P-TO220-2-2. D10S60 Q67040S4643 SDT10S60

    Untitled

    Abstract: No abstract text available
    Text: IDT10S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 24 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 10 A I F @ T C < 100 °C 15 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		PDF IDT10S60C PG-TO220-2-2 20mA2)

    Untitled

    Abstract: No abstract text available
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C IDH10S60C PG-TO220-2 D10S60C

    D10S60

    Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
    Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery


    Original     		PDF SDT10S60 PG-TO220-2-2. D10S60 Q67040S4643 PG-TO-220-2-2 D10S60 DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60

    D10S60C

    Abstract: No abstract text available
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C PG-TO220-2 D10S60C D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C