kl2 diode
Abstract: kl4 surface mount diode Marking Stempelung Diode BAT54AW BAT54CW BAT54SW BAT54W kl3 diode kl4 diode doppeldiode
Text: BAT54W .AW .CW .SW Schottky-Diodes Surface mount Schottky-Barrier Double-Diodes Schottky-Barrier Doppel-Dioden für die Oberflächenmontage Version 21.01.2004 Power dissipation – Verlustleistung 2±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung
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BAT54W
OT-323
BAT54W-series
BAT54AW
BAT54CW
BAT54SW
kl2 diode
kl4 surface mount diode
Marking Stempelung Diode
BAT54AW
BAT54CW
BAT54SW
BAT54W
kl3 diode
kl4 diode
doppeldiode
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BAT54c kl3 l43
Abstract: kl3 diode BAT54S kl1 Marking Stempelung Diode BAT54 BAT54A BAT54C BAT54S KL4 SOT-23 kl4 diode
Text: BAT54 .A .C .S Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2004-03-10 Power dissipation – Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung
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BAT54
OT-23
O-236)
BAT54,
BAT54A,
BAT54C,
BAT54S
BAT54C
BAT54A
BAT54c kl3 l43
kl3 diode
BAT54S kl1
Marking Stempelung Diode
BAT54
BAT54A
BAT54C
BAT54S
KL4 SOT-23
kl4 diode
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d08s60
Abstract: diode 8a 600v
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
PG-TO220-2-2.
Q67040S4647
D08S60
d08s60
diode 8a 600v
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Schottky diode TO220
Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
P-TO220-2-2.
D08S60
Q67040S4647
Schottky diode TO220
SDT08S60
6260 thermal
infineon 6260
Single Schottky diode TO-220
Q67040S4647
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kl4 diode
Abstract: kl3 diode BAT54 BAT54A BAT54C BAT54S kl2 diode marking code kl4 k1 diode
Text: BAT54 .A .C .S Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2004-10-08 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Repetitive peak reverse voltage
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BAT54
OT-23
O-236)
BAT54,
BAT54A,
BAT54C,
BAT54S
BAT54C
BAT54A
kl4 diode
kl3 diode
BAT54
BAT54A
BAT54C
BAT54S
kl2 diode
marking code kl4
k1 diode
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Untitled
Abstract: No abstract text available
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
PG-TO220-2-2.
Q67040S4647
D08S60
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Schottky diode TO220
Abstract: Q67040S4647 SDT08S60 D08S60
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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SDT08S60
PG-TO220-2-2.
D08S60
Q67040S4647
PG-TO-220-2-2
Schottky diode TO220
Q67040S4647
SDT08S60
D08S60
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Untitled
Abstract: No abstract text available
Text: C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier IF TC=135˚C = = 8A 27 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • •
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C4D05120A
O-220-2
C4D05120A
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80SQ05
Abstract: No abstract text available
Text: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2004-08-31 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27
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80SQ05
DO-27
UL94V-0
80SQ05
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Untitled
Abstract: No abstract text available
Text: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2005-01-12 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27
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80SQ05
DO-27
UL94V-0
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Untitled
Abstract: No abstract text available
Text: 80SQ05 80SQ05 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-10-28 Ø 5.2 Nominal Current Nennstrom ±0.2 8A ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert
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80SQ05
DO-27
UL94V-0
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SK86 Preliminary DIODE 8A, 60V SCHOTTKY RECTIFIER DESCRIPTION The UTC SK86 is a schottky rectifier diode, it uses UTC’s advanced technology to provide customers with low forward voltage and high current capability, etc.
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SK86-SMC-R
SK86L-SMC-R
QW-R601-093
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SK810
Abstract: SK82 SK83 SK84 SK85 SK86 SK88
Text: SK82 … SK810 Surface Mount Schottky-Rectifiers Schottky-Gleichrichter für die Oberflächenmontage Version 2004-07-29 Nominal current Nennstrom ±0.2 2.1 2.2 ±0.2 ±0.1 7.9 1.2 0.15 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…100 V
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SK810
DO-214AB
UL94V-0
SK810
SK82
SK83
SK84
SK85
SK86
SK88
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Untitled
Abstract: No abstract text available
Text: SK82 … SK810 Surface Mount Schottky-Rectifiers Schottky-Gleichrichter für die Oberflächenmontage Version 2004-07-29 ±0.2 2.2 ±0.2 2.1 ±0.1 7.9 1.2 0.15 Nominal current Nennstrom 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…100 V
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SK810
DO-214AB
UL94V-0
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TSR860
Abstract: schottky 8a TSR835 TSR845 TSR850 rectifier l1 marking
Text: 8A Schottky Rectifier TSR835 – TSR860 8A Schottky Rectifier Features • • • • Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability High temperature soldering guaranteed: 260° C/10 seconds, /.037" 9.5mm lead length
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TSR835
TSR860
DO-201AD
DO-201AD,
MIL-STD-750,
TSR845
TSR850
TSR860
schottky 8a
TSR835
TSR845
TSR850
rectifier l1 marking
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SBL830
Abstract: SBL835 SBL840 SBL845 SBL850 SBL860
Text: SBL830–SBL860 Vishay Lite–On Power Semiconductor 8A Schottky Barrier Rectifiers Features D D D D Schottky barrier chip Guard ring for transient protection Low power loss, high efficiency High current capability and low forward voltage drop D High surge capability
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SBL830
SBL860
SBL830
SBL835
SBL840
SBL845
SBL850
D-74025
24-Jun-98
SBL835
SBL840
SBL845
SBL850
SBL860
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB8U60 Preliminary DIODE 8A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB8U60 is a 8A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with sort, fast switching capability and low forward voltage drop, etc.
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SB8U60
SB8U60
SB8U60L-T27-R
SB8U60G-T27-R
O-277
QW-R202-027
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CREE C3D08060
Abstract: c3d08060 C3D08060G
Text: C3D08060G–Silicon Carbide Schottky Diode VRRM = 600 V Z-REC RECTIFIER IF =8A TC < 150°C Features • • • • • • • Qc Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C3D08060G
600-Volt
O-263-2
00W-1600W
CREE C3D08060
c3d08060
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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Untitled
Abstract: No abstract text available
Text: SDB8200PH Semiconductor Schottky Barrier Rectifier 200V, 8A POWER SCHOTTKY RECTIFIER Features Low forward voltage drop Low power loss and High efficiency Low leakage current High surge capability 1 2 Full lead Pb -free and RoHS compliant device
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SDB8200PH
O-220F-2L
SDB8200PH
KSD-D0Q034-000
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GB05SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features • 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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GB05SHT06-CAU
Mil-PRF-19500
GB05SHT06
99E-17
87E-05
38E-10
00E-10
00E-03
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features • 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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GB05SHT06-CAL
Mil-PRF-19500
GB05SHT06
99E-17
87E-05
38E-10
00E-10
00E-03
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Diode SMD SJ 66A
Abstract: No abstract text available
Text: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint
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OCR Scan
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5545S
Diode SMD SJ 66A
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schematic diagram NAND gates
Abstract: logic gates circuit diagram schematic of TTL OR Gates sama logic schematic diagram AND gates pin configuration of logic gates logic gates pin configuration signetics nand gates Buffers NAND Gates
Text: NAPC/ S I G N E T I C S 8250006 54C D SIGNETICS • bbSBiBM 0021771 CDRP 54C BIPOLAR LSI PRODUCTS tegrated Schottky Logic . ISL combines the features of Schottky and the density of |2L Bipolar technologies. Customer programmable LSI 2016 ISL NAND) gates 72 Schottky buffers
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OCR Scan
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PDF
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8A2176
24-milliampere
schematic diagram NAND gates
logic gates circuit diagram
schematic of TTL OR Gates
sama logic
schematic diagram AND gates
pin configuration of logic gates
logic gates pin configuration
signetics nand gates
Buffers
NAND Gates
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