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    SBL835 Price and Stock

    Diodes Incorporated SBL835

    DIODE SCHOTTKY 35V 8A TO220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SBL835 Tube 50
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    SBL835 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SBL835 Diodes RECTIFIER SCHOTTKY SINGLE 8A 35V 200A-ifsm 0.55V-vf 0.5mA-ir TO220AC 50/TUBE Original PDF
    SBL835 Diodes 8.0A SCHOTTKY BARRIER RECTIFIER Original PDF
    SBL835 Diodes Short Form Selection Guide Original PDF
    SBL835 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF
    SBL835 Lite-On Technology 35V, 8.0A schottky barrier rectifier Original PDF
    SBL835 Sirectifier Low VF Schottky Barrier Rectifiers Original PDF
    SBL835 Vishay Schottky Diod Original PDF
    SBL835 Diodes Schottky Barrier Rectifiers Scan PDF

    SBL835 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MODELS 830, 860

    Abstract: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860
    Text: SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 Features • · · · · · · Schottky Barrier Chip Guard Ring for Transient Protection Low Power Loss, High Efficiency High Current Capability, Low VF


    Original     		PDF SBL830 SBL860 SBL835 SBL840 SBL845 SBL850 O-220AC MIL-STD-202, MODELS 830, 860 SBL860

    SBL830

    Abstract: SBL835 SBL840 SBL845
    Text: SBL830 thru SBL845 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 SBL830 SBL835 SBL840 SBL845 Symbol VRMS V 21 24.5 28 31.5 Dim. VDC V 30 35 40 45 Characteristics


    Original     		PDF SBL830 SBL845 O-220AC SBL830 SBL835 SBL840 300ua 300us SBL835 SBL840 SBL845

    SBL830

    Abstract: SBL835 SBL840 SBL845
    Text: SBL830 thru SBL845 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 SBL830 SBL835 SBL840 SBL845 Symbol VRMS V 21 24.5 28 31.5 Dim. VDC V 30 35 40 45 Characteristics


    Original     		PDF SBL830 SBL845 O-220AC SBL830 SBL835 SBL840 300ua 300us SBL835 SBL840 SBL845

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODELS: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring for Transient Protection TO-220AC Low Power Loss, High Efficiency L High Current Capability, Low VF


    Original     		PDF SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 O-220AC

    Untitled

    Abstract: No abstract text available
    Text: SBL835 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage35 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)8.0


    Original     		PDF SBL835 Voltage35 Voltage550m Current500u Current50m StyleTO-220AC

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


    Original     		PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    SBL1040T

    Abstract: SBL4040PT TO-247ad SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 SBL830
    Text: Schottky Barrier Diodes Low VF Schottky Barrier Diodes Tj=-40°C~+125C, Tjm=+125°C Òype VR=VRRM IFAV Electrical Characteristics IR @ VR=VRRM IFSM 125°C 125°C A mA mA V A SBL530 30 5 175 0.5 SBL535 35 5 175 SBL540 40 5 SBL545 45 SBL550 VFmax @ IFM Package Style


    Original     		PDF SBL530 SBL535 SBL540 SBL545 SBL550 O-220AC SBL1040T SBL4040PT TO-247ad SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 SBL830

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: July 24, 2006 August 1, 2006 Discrete Semiconductor Marking Change DCS/PCN-1046 PCN #: PCN #: 1046 TITLE Improved Marking IMPACT NONE DESCRIPTION OF CHANGE Upgrade part marking to Laser marking from ink markings


    Original     		PDF DCS/PCN-1046 SBL1640 SBL1640CT SBL1640CT-02 SBL1645 SBL1650 SBL1650CT SBL1660 SBL1660CT SBL2030CT

    SBL830

    Abstract: SBL835 SBL840 SBL845 SBL850 SBL860
    Text: LITE-ON SEMICONDUCTOR SBL830 thru SBL860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


    Original     		PDF SBL830 SBL860 O-220AC SBL830 SBL845 SBL850 300ua 300us SBL835 SBL840 SBL845 SBL850 SBL860

    SBL830

    Abstract: SBL835 SBL840 SBL845 SBL850 SBL860
    Text: LITE-ON SEMICONDUCTOR SBL830 thru SBL860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


    Original     		PDF SBL830 SBL860 O-220AC O-220AC SBL830 SBL845 SBL850 300ua 300us SBL835 SBL840 SBL845 SBL850 SBL860

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Rectifiers Type Num ber M axim um Average Rectified Current @ Half-Wave Resistive Load 60Hz M axim um Forward Peak Surge Current @ 8.3ms Superim posed PRV l0 @ Tc lFM Surge M axim um Reverse Current @ PRV M axim um Forward Voltage @ 2 5 ° Tc


    OCR Scan     		PDF MBR730 MBR735 MBR740 MBR745 MBR750 MBR760 Schottky/T0-220A SBL1645 SBL1650 SBL1660

    Untitled

    Abstract: No abstract text available
    Text: LITE ? I SEMICONDUCTORS SBL8 SBR8 SERIES TO-220 FEATURES Î3 9 3 531 • P lastic package has U /L • F la m m a b ility C la ssifica tio n 9 4 V -0 • Exceeds e n v iro n m e n ta l standards o f M IL -S -1 9 5 0 0 • M etal o f s ilic o n re c tifie r, m a jo rity ca rrie r c o n d u c tio n


    OCR Scan     		PDF O-220 D0201AD

    PBL302

    Abstract: kbp 3510 m5818 r 1504 C3510W
    Text: ALPHANUMERICAL INDEX PARTS NO. PAG E PARTS PAG E PARTS PAG E PARTS NO. NO. NO. NO. NO. N O. N O. 1N 4001 . . . . . . 150 . 128 E R 1007 . . . . . . 84 K BP 01G . . . . 1N 5401G . . . . . . . . 126 1 N 4 0 0 1 G L . . . . . 12 4 1N5402 . . . . . 158 A R 2 5 0 8 G . . . . . 136


    OCR Scan     		PDF 5401G 5402G 1N5402 5403G 5404G 1N5405 5406G 5408G PBL302 kbp 3510 m5818 r 1504 C3510W

    Untitled

    Abstract: No abstract text available
    Text: S BL830-S BL860 Vishay Lite-On Power Semiconductor 8A Schottky Barrier Rectifiers Features • S chottky barrier chip • Guard ring fo r tran sien t protection • Low pow er loss, high efficiency • High current capability and low forw ard voltage drop


    OCR Scan     		PDF BL830-S BL860 SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 D-74025 24-Jun-98

    Untitled

    Abstract: No abstract text available
    Text: llA IE t ilWU SCHOTTKY BARRIER RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C Maximum Average Rectified Current @ Half-Wave Resistive Load Maximum :|i TYPE î H IM qÜ ; Â I î .}! PRV lo @ T q * Q_ > a av ;i Maximum F orw ard; >Peak Surge Current;


    OCR Scan     		PDF SCHOTTKY/TO-22QA SBL830 SBL835 SBL840 SBLB45 SBL650 SBL860 OTTKY/TI0-220 SBL1630CT SBL1635CT

    FBU4K

    Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
    Text: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL


    OCR Scan     		PDF 1N4001 N4001 1N4001G 4001L 1N4002 1N4002G 1N4002GL 1N4002L 1N4003 FBU4K FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406