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    GB05SHT06 Search Results

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    GB05SHT06 Price and Stock

    GeneSic Semiconductor Inc GB05SHT06-CAU

    SiC Schottky Diodes SiC 650V 5A 225 DegC Au Top and Au Bottom
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GB05SHT06-CAU
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    • 100 $66.2
    • 1000 $66.2
    • 10000 $66.2
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    GeneSic Semiconductor Inc GB05SHT06-CAL

    SiC Schottky Diodes SiC 650V 5A 225Deg C AI Top and Au Bottom
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GB05SHT06-CAL
    • 1 -
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    • 100 $63.84
    • 1000 $63.84
    • 10000 $63.84
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    Navitas Semiconductor GB05SHT06-CAU

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com GB05SHT06-CAU
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    • 100 $139
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    Navitas Semiconductor GB05SHT06-CAL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com GB05SHT06-CAL
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    • 100 $98
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    GB05SHT06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original
    PDF GB05SHT06-CAL Mil-PRF-19500 GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB05SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original
    PDF GB05SHT06-CAU Mil-PRF-19500 GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03

    GB05SHT06-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB05SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013


    Original
    PDF GB05SHT06-CAU GB05SHT06-CAU. 05-SEP-2013 GB05SHT06 99E-17 87E-05 38E-10 00E-10 GB05SHT06-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB05SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original
    PDF GB05SHT06-CAU GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB05SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original
    PDF GB05SHT06-CAL GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03

    GB05SHT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB05SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013


    Original
    PDF GB05SHT06-CAL GB05SHT06-CAL. 05-SEP-2013 GB05SHT06 99E-17 87E-05 38E-10 00E-10 GB05SHT06-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB20SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original
    PDF GB20SHT06-CAU CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB20SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original
    PDF GB20SHT06-CAL CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03