DTC123TKA
Abstract: No abstract text available
Text: DTA113TKA DTC123TKA Transistors I Digital transistor built-in resistors DTA113TKA •F e atu res 1 ) Built-in bias resistors enable the configuration of an inverter circuit without connecting externa! input resistors. 2 ) The bias resistors consist of thin-fHm resistors with complete
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DTA113TKA
DTC123TKA
DTA113TKA
3PEC-C123T)
DTC123TKA
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BUH715
Abstract: GC328
Text: r = 7 m 7# S G S - T H O M S O N R!SDe^ IILie¥IRi®liaD l BUH715 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N APPLICATIONS:
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BUH715
ISOWATT218
E81734
BUH715
P025C
GC328
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MIC2941A
Abstract: No abstract text available
Text: M IC 2 9 4 0 A /2 9 4 1 A 1.25A Low-Dropout Voltage Regulator Prelim inary Inform ation General Description Features The MIC2940A and MIC2941A are “bulletproof” efficient voltage regulators with very low dropout voltage typically 40mV at light loads and 350mV at 1A , and low quiescent
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MIC2940A
MIC2941A
350mV
MIC2940
MIC2940Axx
MIC2940A/2941A
MIC2940A-5
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tip35
Abstract: tip 35c
Text: 7 ^ 5 3 7 002^247 SGS-THOMSON T TIP35/35A/35B/35C TIP36/36A/36B/36C S G S - T H 0 MS 0 N 3QE ] POWER AMPLIFIER AND SWITCHING APPLICATIONS ADVANCE DATA DESCRIPTION The TIP35/TIP35A/TIP35B/TIP35C are silicon epi taxial-base NPN transistors in SOT-93 plastic
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TIP35/35A/35B/35C
TIP36/36A/36B/36C
TIP35/TIP35A/TIP35B/TIP35C
OT-93
TIP36/TIP36A/TIP36B/TIP36C.
TIP36
TIP36A
TIP36B
TIP36C
TIP35
tip 35c
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2n5415
Abstract: No abstract text available
Text: r Z Z SCS-THO M SO N 2N5415 •v# 2N5416 »aii eiR iiLieTK®ioei SILICON PNP TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ PNP TRANSISTOR DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and
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2N5415
2N5416
2N5415,
2N5416
SC088
2N5415
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2SD2470
Abstract: No abstract text available
Text: 2SD2142 K / 2SC2062S 2SD2470 Transistors I High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S •F e atu res • A b so lu te maximum rating« (Ta=25°C) 1 ) Darlington connection for a high hre. (Min. 5 0 0 0 at V ce /Ic =3 V /0 .1 A ) 2 ) H igh input im pedance.
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2SD2142
2SC2062S
2SD2470
2SD2142K
2SC2062S
Taoe25'
-D230)
2SD2470
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D41K1
Abstract: No abstract text available
Text: D41K Series File Number 2340 T E R M IN A L D E S IG N A T IO N S 2-Ampere Silicon P-N-P Power T ransistors \ Com plementary to the D40K Series TAB o F e atu re s: • Operates from IC without predriver Applications: Switching regulator Lamp driver Touch switch
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-202A
D41K-series
300ms
D41K1
D41K3
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K460
Abstract: 1di200
Text: 1DI200ZP-120 200A h 7 ' < * 7 - i> = L - ) V '• Outline Drawings POWER TRANSISTOR MODULE ■ 4# ^ : F e atu res • hFEA^lav,' High DC C urren t Gain • K rt* • seifiSwiffiB&'it ■ f f l i i l : A p p lic a tio n s • i/L ffl-f w < — £ General Purpose Inverter
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1DI200ZP-120
K460
1di200
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Untitled
Abstract: No abstract text available
Text: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten
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73232J7
MJE13006
MJE13007/A
MJE13006,
MJE13007
MJE13007Aare
O-220
MJE13007A
MJE13006
7T2T237
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Untitled
Abstract: No abstract text available
Text: ILH100 SIEMENS HERMETIC PHOTOTRANSISTOR OPTOCOUPLER FE A T U R E S • O p e ra tin g T e m p e ra tu re R ang e, -5 5 ° C to + 125°C • C u rre n t T ran sfe r R atio G u a ra n te ed from -5 5 ° C to + 100°C A m b ie n t T e m p e ra tu re R ang e • H igh C u rre n t T ran sfe r R atio a t Low In p u t C u r
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ILH100
10Ki2
15Ki2
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Untitled
Abstract: No abstract text available
Text: Whp\ HEWLETT mLftM P A C K A R D Herm etically Sealed, High Speed, High CMR, Logic Gate Optocouplers Technical Data 6N134* 81028 HCPL-563X HCPL-663X HCPL-565X 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X *See m atrix fo r available extensions. Features
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6N134*
HCPL-563X
HCPL-663X
HCPL-565X
HCPL-268K
HCPL-665X
HCPL-560X
MIL-PRF-38534
QML-38534,
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2DI75M-120
Abstract: T151 T930 B383
Text: 2DI75M-1 20 75A ' < r7 — h 7 V y X ^ i y ±/n °7-Z î Sd.-JU a — 71/ : Outline Drawings POWER TRANSISTOR MODULE Mounting hole i Features • 12 = ^ = C2E1 High Arm Short Circuit Capability • h F E ^ f t i' /T * V £ / Including Free Wheeling Diode
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2DI75M-1
25-35Kg
E82988
I95t/R89
Shl50
2DI75M-120
T151
T930
B383
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Untitled
Abstract: No abstract text available
Text: HFA1113 S e m iconductor September 1998 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier The HFA1113 is a high speed Buffer featuring user programmable gain and output limiting coupled with ultra high speed performance. This buffer is the ideal choice for
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HFA1113
850MHz,
HFA1113
1600nm
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Untitled
Abstract: No abstract text available
Text: r= Z S C S -T H O M S O N TDA1904 4W AUDIO AMPLIFIER • H IG H O U TPUT UP TO 2A CURRENT C A P A B IL IT Y • PRO TEC TIO N A G A IN S T CHIP O V E R T E M PER ATU R E • LOW NOISE • H IG H SUPPLY V O L T A G E REJECTION • SUPPLY V O L T A G E
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TDA1904
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ‘ Motorola Preferred Device . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications.
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2N6387/D
2N6387
21A-06
O-220AB
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TIP55A
Abstract: TIP58A d03b TIP55 TIP142 40960 rca TIP56A TIP57A TIP56 TIP5
Text: TEXAS INSTR -COPTO* 89^1726 TEXAS "b5 INSTR DE 00 3 ^5 3 ^ COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS 3 3 ~ * l R EV ISED O CTO BE R 1 9 8 4 Min V(BR)CEO 2 5 0 v to 4 0 0 V 50 W a t 100 ° C C ase Temperature 10 A Peak Collector Current
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flcit117Eb
003bfl3b
TIP55A,
TIP56A,
TIP57A,
TIP58A
O-218AA
TIP55A
TIP56A
TIP57A
d03b
TIP55
TIP142
40960 rca
TIP56
TIP5
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TE 2556
Abstract: top 2556 en *A3255
Text: HA-2556 fü HARRIS S E M I C O N D U C T O R 57MHz, W ideband, Four Quadrant, Vo I tag e O u tp u t An al og M u lt ip li e r November 1 9 9 6 Features Description • Hi g h S p e e d V o l t a g e O u t p u t . 4 5 0 V / | i s
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HA-2556
57MHz,
HA-2556
52MHz
57MHz
TE 2556
top 2556 en
*A3255
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Harris DG303
Abstract: HI-3001 HI-383 HI-303 HL30
Text: H arris HARRIS SEMICOND SECTOR 10E $ | 43Q2571 001 34S5 3 | HI-303/883 , . T-51-11 Dual SPDT CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1.
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00134SS
HI-303/883
T-51-11
Mll-Std-883
100nA
DG303
--16V
VlNH-14
H1-304
--15V
Harris DG303
HI-3001
HI-383
HI-303
HL30
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transistor 669
Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor
Text: G E SOLID STATE 01 D E | 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:
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CA3096,
CA3096A,
CA3096C
RCA-CA3096CE,
CA3096E,
CA3096AE
CA3096AE.
92CS-33305
CA3096H
transistor 669
CA3096E
RCA-CA3096CE
CA3096CE
CA3096
CA3096A
CA3096C
thyristor firing circuits
schematic of 2f npn transistor
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Untitled
Abstract: No abstract text available
Text: HA-2546 fü HARRIS S E M I C O N D U C T O R 3 0 M H z , V o lt a g e O u t p u t , Two Q u a d r a n t A n a l o g M u lt ip li e r November 1996 Features Description • Hi g h S p e e d V o l t a g e O u t p u t . 3 0 0 V / | i s
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HA-2546
HA-2546
30MHz
17MHz
-52dB
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Untitled
Abstract: No abstract text available
Text: HFA3600 Semiconductor L o w -N o is e December 1996 A m p lifie r /M ix e r Features Description • LNA The HFA3600 is a silicon Low-Noise Amplifier with high per formance characteristics allowing the design of very sensi tive, wide dynamic-range 900MHz receivers with minimal
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HFA3600
HFA3600
900MHz
900MHz
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2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro
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29B52595F13
52595F09
2N3800
germanium
diode germanium tu 38 e
2n4051 motorola
2N4280
2N3980
1N3492
MC710F
2N4276
2n3817
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transistor GT 1083
Abstract: Hewlett-Packard application note 967 HXTR-5102 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz
Text: PACKARD MM COM PON EN TS LINEAR POWER TRANSISTOR HXTR-5102 Features 20.3 TYP. 0.80 HIGH P1dB LINEAR POWER 29 dBm Typical at 2 GHz 27.5 dBm Typical at 4 GHz 14.2 (0.b6) TYP. 3-05 TYR ( 0 . 12 ) 2.0 (0.0801 HIGH P1dB GAIN 11.5 dB Typical at 2 GHz 7 dB Typical at 4 GHz
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HXTR-5102
HPAC-200
HXTR-5102
HXTR-6101
transistor GT 1083
Hewlett-Packard application note 967
4 ghz transistor
hewlett-packard application note 972
Y2w TRANSISTOR
HP 9605
HP-67
Silicon Bipolar Transistor Hewlett-Packard
transistor amplifier 3 ghz
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TKP 470 M
Abstract: L4562 hp 4562
Text: W fip l H E W L E T T m Lftm P A C K A R D High B andw idth, Analog/Video O ptocouplers Technical Data HCPL-4562 HCNW4562 Features Applications D escription • Wide Bandwidth!1!; 17 MHz HCPL-4562 9 MHz (HCNW4562) • High Voltage Gain!1!; 2.0 (HCPL-4562)
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HCPL-4562
HCNW4562
HCPL-4562)
HCNW4562)
HCPL4562
HCNW4562
TKP 470 M
L4562
hp 4562
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