SPRAGUE 725M
Abstract: SBE 715p CARBON COMP RESISTOR SPRAGUE 716p capacitor polyester ORANGE Sprague Orange Drop 779p 716P 192P sprague 763M 770P
Text: SB E SBE, Inc. 131 South Main Street Barre, Vermont 05641-4854 USA L CTR E O N T 802-476-4146 F 802-476-4149 web site: www.SBElectronics.com e-mail: Info@SBElectronics.com IC S SBE Orange Drop , Radial Lead P O LY P R O P Y L E N E — Performance. F R O M
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500igned
/461M
/463M
SPRAGUE 725M
SBE 715p
CARBON COMP RESISTOR
SPRAGUE 716p
capacitor polyester ORANGE
Sprague Orange Drop 779p
716P
192P sprague
763M
770P
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MIDWEC capacitor
Abstract: 298P Metallized Polyester Film Capacitor 192P 461M104910 polystyrene capacitors industrial midwec variable resistor 727M 461M60491 METALLIZED POLYESTER FILM CAPACITORS
Text: Type 461M Type 461M Metallized Polyester Film Capacitors Metallized Polyester Film Capacitors Type 461M Axial Lead Pressed/Oval Profile Metallized Polyester Film Capacitors Specifications Insulation Resistance: At +25°C: 10,000 MΩ for C ≤ 1.0 µF 10,000 MΩ-µF for C > 1.0 µF
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UL510
UL94V-0
460M/461M
462M/463M
MIDWEC capacitor
298P
Metallized Polyester Film Capacitor
192P
461M104910
polystyrene capacitors
industrial midwec
variable resistor 727M
461M60491
METALLIZED POLYESTER FILM CAPACITORS
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MIDWEC capacitor
Abstract: sbe760m WE 251 sbe 192P 763M industrial midwec 4854 106J 192P 192P sprague
Text: Type 760M Metallized Polypropylene Film Capacitors Type 760M Axial Lead Round Profile Metallized Polypropylene Film Capacitors Specifications Insulation Resistance measured at 100 VDC : At +25°C: 400,000 MΩ for C ≤ 0.5 µF 200,000 MΩ-µF for C > 0.5 µF
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UL510
UL94V-0
460M/461M
462M/463M
MIDWEC capacitor
sbe760m
WE 251
sbe 192P
763M
industrial midwec
4854
106J
192P
192P sprague
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MIDWEC capacitor
Abstract: industrial midwec 106k 250v 192P 460M55692 779P midwec variable resistor 727M
Text: Type 460M Metallized Polyester Film Capacitors Type 460M Axial Lead Round Profile Metallized Polyester Film Capacitors Specifications Capacitance Range: 0.0047 to 100.0 F Capacitance Tolerance: ±5% and ±10%, standard other tolerances available Insulation Resistance:
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UL510
UL94V-0
MIDWEC capacitor
industrial midwec
106k 250v
192P
460M55692
779P
midwec
variable resistor 727M
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MIDWEC capacitor
Abstract: MIDWEC 4 331 1 6 Midwec 3 476 capacitor 106J 192P 192P sprague Film Capacitors Introduction industrial midwec Metallized Polyester Film Capacitor AC
Text: Type 761M Metallized Polypropylene Film Capacitors Type 761M Axial Lead Pressed/Oval Profile Metallized Polypropylene Film Capacitors Specifications Insulation Resistance measured at 100 VDC : At +25°C: 400,000 MΩ for C ≤ 0.5 µF 200,000 MΩ-µF for C > 0.5 µF
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UL510
UL94V-0
460M/461M
462M/463M
MIDWEC capacitor
MIDWEC 4 331 1 6
Midwec 3
476 capacitor
106J
192P
192P sprague
Film Capacitors Introduction
industrial midwec
Metallized Polyester Film Capacitor AC
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E180N
Abstract: E060CK E180N SBE HS19F500B HS5F7.5AS HS20F500B HS5F5AS Sola/transformer 3000 kVA C1047 E180CK
Text: Sola/Hevi-Duty General Purpose and Buck Boost Transformers General Purpose Electrical Transformers c Free Shielding c Fast, Easy Installation Single Phase, 10 KVA Ñ 240 ´ 480 Volt Primary, 120/240 Secondary, 60 Hz c UL-3R Enclosures c Highly Versatile Hevi-Duty General Purpose Transformers are the industryÕs workhorses.
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HS1B50
HS1B100
HS1B150
HS1B250
HS1F500B
HS1F750B
E1100
E060CK
E180CK
E380CK
E180N
E180N SBE
HS19F500B
HS5F7.5AS
HS20F500B
HS5F5AS
Sola/transformer 3000 kVA
C1047
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MB87Q3140
Abstract: MB87Q3141 MB87Q3141RB-GE1 xbee TRC1000 program eeprom 24c32
Text: Fujitsu Microelectronics America, Inc. 1601 Trapelo Road Suite 273 Waltham, Ma 02451 July 19, 2006 Thuan Nguyen Qualcomm Incorporated 5775 Morehouse Drive San Diego, CA 92121-1714 Dear Thuan: The following information is intended to alleviate some confusion that has resulted regarding
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MB87Q3140RB-G.
MB87Q3141RB-G.
Node1006
Node1003
Node1007
MB87Q3140
MB87Q3141
MB87Q3141RB-GE1
xbee
TRC1000
program eeprom 24c32
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BYX46
Abstract: 7Z10045 diode 10di T50 thyristor BYX46-600 BYX46-200 BYX46-200R BYX46-600R D696
Text: BYX46 SERIES PHILIPS SbE D INTERNATIONAL • 7110a2b 0041b3D S32 ■ P H I N _ FAST SOFT-RECOVERY RECTIFIER DIODES - r t ^ * • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily
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BYX46
711002h
0041b3D
BYX46-200
BYX46-600.
BYX46-200R
BYX46-600R
T-03-19
7Z10045
diode 10di
T50 thyristor
BYX46-600
BYX46-600R
D696
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BDS945
Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors
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711002b
BDS943/945/947
T-33-0?
OT223)
BDS944/946/948.
BDS943
BDS945
BDS947
m lc 945
J 3305
DDM317S
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S4KW12KA-3
Abstract: S4KW16KA-4 S4KW20KA-5 S4KW24KA-6 DS179 ha 1758
Text: SBE D SEMTECH CORP û ia T ia T KUJ-lPfn 000 27Ô3 S4KW4KA-1 STD. RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER 112 S4K8WKA-2 S4KW12KA-3 S4KW16KA-4 S4KW20KA-5 S4KW24KA-6 HIGH VOLTAGE, HIGH CURRENT, HIGH DENSITY, STANDARD RECOVERY RECTIFIER ASSEMBLY QUICK REFERENCE
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600cfm
S4KW12KA-3
S4KW16KA-4
S4KW20KA-5
S4KW24KA-6
S4KW12KA-3
S4KW16KA-4
S4KW20KA-5
S4KW24KA-6
DS-179
DS179
ha 1758
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BSS38
Abstract: IEC134
Text: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.
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BSS38
BSS38
IEC134
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SbE D • 711DflSb DDMbSTti DTO ■ P H I N Philips Components RZ3135B42W Data sheet status date ofIssue Preliminary specification June 1992 NPN silicon planar epitaxial microwave power transistor D E S C R IP T IO N A P P L IC A T IO N
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711DflSb
RZ3135B42W
711005b
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PLD intel
Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program
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Q07bBbl
28F010
1024K
NonvolaF010-120
TN28F010-120
P28F010-150
N28F010-150
N28F010-90V05
E28F010-120
E28F010-150
PLD intel
intel 28F010
07B27
interfacing eprom and eeprom
28f010-150
intel PLD
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intel 28F020
Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
Text: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program
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007L5<
2048K
Nonvol020-200
F28F020-150
F28F020-200
TE28F020-90
TF28F020-90
TE28F020-150
TF28F020-150
ER-20,
intel 28F020
flash n28f020
p28f020
28F020
E28F020
F28F020
intel PLD
29024
28f020-150
D28F020
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Hp 4619
Abstract: Serial NAND A1225 A1240 A1280 CQFP 256 PIN actel 81H13 actel a1240 A1280-1 2a1280
Text: SBE AC TEL CORP D • OnEHTb DGDDMGS Mb3 ■ ACT ACT 2 Field Programmable Gate Arrays Features • Up to 8000 Gate Array Gates 20,000 PLD /LC A ™ equivalent gates • Replaces up to 210 T T L Packages • Replaces up to 69 20-Pin PA L Packages • Design Library with over 250 Macros
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20-Pin
16-Bit
On241b
100-Pin
00D0475
84-Pin
T-46-1il
Hp 4619
Serial NAND
A1225
A1240
A1280
CQFP 256 PIN actel
81H13
actel a1240
A1280-1
2a1280
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83c575
Abstract: cmps a13 TOP3 package 80C51 80C575 87C575 P80C575EBPN P87C575EBPN enc28 gpcvim
Text: PHILIPS INTERNATIONAL SbE D • 7 H D f i2 b DQ3TD34 D12 p r e l im in a r y a p e v u r v i Philip» Sem iconductors M icrocontroller Products 80C575/83C575/87C575 CMOS single-chip 8-bit microcontroller T -4 9 -1 9 -0 8 PIN CONFIGURATIONS DESCRIPTION FEATURES
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80C575/83C575/87C575
T-49-19-08
80C575/83C575/87C575
8XC575
83C575)
87C575)
16-bit
48tcLCL
83c575
cmps a13
TOP3 package
80C51
80C575
87C575
P80C575EBPN
P87C575EBPN
enc28
gpcvim
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m2131
Abstract: BYV92 100 BYV92 BYV92-300 BYV92-500U T0319 M2132 350AT m2136
Text: BYV92 SERIES M A IN T E N A N C E T Y P E LIPS INTERNATIONAL SbE D • J V 711Dâ2b □□414bb S2b ■ P H I N T - O Z - l l ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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BYV92
BYV92-300
f-10au
T-03-19
711002b
Q0mM73
M2135
M2136
m2131
BYV92 100
BYV92-500U
T0319
M2132
350AT
m2136
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minimelf marking
Abstract: p 4614 4626 1085P
Text: SbE D • 7^2^537 0041bl3 1TD «SfiTH r r z SGS-THOMSON ^ 7 # S T-H-Û7 M t œ n m g i r a œ s TMM 4614 -» TMM 4627 G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 1.8V TO 6.2V D E S C R IP T IO N Low leakage, low impedance, low noise Zener diodes A B S O L U T E R A T IN G S limiting values
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0041bl3
7T5TS37
200mA)
minimelf marking
p 4614
4626
1085P
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I28F400
Abstract: 80L188EB 82360SL intel PLD D773
Text: A D V A N C E IN F O R M A T IO N in te i INTEL CORP MEMORY/PLD/ SbE » • 4fl2bl7b Da773Sa TßH ■ I T L E 28F400BX-TL/BL, 28F004BX-TL/BL - T qt (3> 2 6 4MBIT (256K x16, 512K x8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY I Low Voltage Operation for Very Low
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Da773Sa
28F400BX-TL/BL,
28F004BX-TL/BL
x8/x16
28F400BX-TL,
28F400BX-BL
16-bit
32-bit
28F004BX-TL,
28F004BX-BL
I28F400
80L188EB
82360SL
intel PLD
D773
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28F400BX-B
Abstract: 28F400BX-T 28F004BX-B 28F004BX-T intel PLD PA28F400BX
Text: INTEL CORP HENORY/PLD/ SbE D 4fl5bl7L, 007fc.44D 0 2 e! • i ITL2 D K lF O l^ lîü l T rO O M in te l 28F400BX-T/B, 28F004BX-T/B 4 MBIT (256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Very High-Performance Read — 60/80 ns Maximum Access Time — 30/40 ns Maximum Output Enable
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QQ7b440
28F400BX-T/B,
28F004BX-T/B
x8/x16
28F400BX-T,
28F400BX-B
16-bit
32-bit
28F004BX-T,
28F004BX-B
28F400BX-B
28F400BX-T
28F004BX-B
28F004BX-T
intel PLD
PA28F400BX
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Untitled
Abstract: No abstract text available
Text: SbE T> m ISGTH 7^2*123? 004D1QQ 04G T - ^ 6 -0 7 - I / M54HC273 M74HC273 SCS-THOMSON 0 © [l[L i© ir K S R il0 © S G S-THOMSON OCTAL D-TYPE FLIP FLOP WITH CLEAR • HIGH SPEED fMAX = 48 MH z (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION ICC = 4 M (MAX.) at TA = 25°C
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004D1QQ
M54HC273
M74HC273
54/74LS273
M54/74HC273
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D0414
Abstract: alps 503 a m2131 BYV92 100 BYV92 BYV92-300 BYV92-500U S 0319
Text: BYV92 SERIES M A IN TEN A N C E TYPE ?HILIPS INT ERN ATI ONA L SbE D • 711DÔ2L ODMlMbb ULTRA FAST RECOVERY RECTIFIER DIODES ■ RHIN T - O Z - l l Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery
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BYV92
BYV92-300
m2134
711Dfl2b
m2135
m2136
D0414
alps 503 a
m2131
BYV92 100
BYV92-500U
S 0319
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1n4627
Abstract: No abstract text available
Text: SbE D • 7^2=5837 0D4153fl bTT ■ SGTH S C S -T H O M S O N [* [R » iO T œ s S G 1N 4 6 1 4 -1 N 4627 1N 4099 ~»1N 4118 T~th07 S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 1.8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak age low noise. Zener impedance and Zener voltage
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0D4153fl
250mW
1N4627/1N
1N4118
1n4627
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8n20
Abstract: 8N18 rfm8n
Text: H A J R R RFM 8N18/8N20 RFP8N18/8N20 I S HARRIS SEMICOND SECTOR 5fc>E J> m 43G2E71 0Q41b7fl TTÔ IHAS August 1991 N-Channel Enhancement Mode Power Field Effect Transistors 7 ^ 3 4 */ Packages Features T0-204AA • 8A, 180V and 200V • rDS(on = o .s n • S O A is Pow er-D issipation Limited
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8N18/8N20
RFP8N18/8N20
T0-204AA
43G2E71
0Q41b7fl
RFP8N18
RFP8N20
S-36167
3-36I64
8n20
8N18
rfm8n
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