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    E28F020 Price and Stock

    Intel Corporation E28F020120

    - Trays (Alt: E28F020120)
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    Avnet Americas E28F020120 Tray 4 Weeks 125
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    Rochester Electronics E28F020120 92,324 1
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    Intel Corporation E28F020-90

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    Quest Components E28F020-90 236
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    Intel Corporation E28F020-150

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    Quest Components E28F020-150 177
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    E28F020-150 149
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    Others E28F020-90

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    Chip 1 Exchange E28F020-90 1,857
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    Others TE28F020-120

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    E28F020 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    E28F020-120 Intel 28F020 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
    E28F020-150 Intel 28F020 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
    E28F020-150 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
    E28F020-150 Intel 2048K CMOS Flash Memory Scan PDF
    E28F020-200 Intel 2048K CMOS Flash Memory Scan PDF
    E28F020-200 Intel 2048K CMOS Flash Memory Scan PDF
    E28F020-70 Intel 2048(256 x 8) CMOS flash memory. Access speed 70 ns Original PDF
    E28F020-80 Intel EEPROM Parallel Async Original PDF
    E28F020-90 Intel 28F020 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
    E28F020-90 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original PDF

    E28F020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E28F010

    Abstract: E28F020
    Text: CIC-32TS-32D-A6-YAM-S 32-Lead TSOP to a 32-Pin DIP 7/97 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F010 E28F020 E28F001BX SOCKET: Yamaichi IC191-0322-001 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $90.00 $81.00 $76.50 $67.50 TYPICAL DIMENSIONS: (Drawings not to scale)


    Original     		PDF CIC-32TS-32D-A6-YAM-S 32-Lead 32-Pin E28F010 E28F020 E28F001BX IC191-0322-001 NC/A17/RP E28F010 E28F020

    E28F010

    Abstract: E28F020
    Text: CIC-32TS-32D-A6-YAM-S 32-Lead TSOP to a 32-Pin DIP 3/98 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F010 E28F020 E28F001BX SOCKET: Yamaichi IC191-0322-001 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $90.00 $81.00 $76.50 $67.50 TYPICAL DIMENSIONS: (Drawings not to scale)


    Original     		PDF CIC-32TS-32D-A6-YAM-S 32-Lead 32-Pin E28F010 E28F020 E28F001BX IC191-0322-001 NC/A17/RP E28F010 E28F020

    a56 transistor

    Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor:


    Original     		PDF FM3-83 EMP20 a56 transistor DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics

    M28F512-12C3

    Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
    Text: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild


    Original     		PDF 11F-16, M28F512-12C3 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64

    intel 80c186

    Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		PDF 28F020 2048K 32-Pin 32-Lead ER-28 AP-316 AP-325 ER-20 -80V05 intel 80c186 F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020

    TSOP56

    Abstract: 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 October 7, 1997 Intel Corporation 1900 Prairie City Rd. Folsom, CA 95630 Dear Programmer Vendor: I am pleased to inform Intel Corp. that your device programming hardware and software has passed programmer


    Original     		PDF FM3-83 TSOP56 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE

    pioneer PAL 007 A

    Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
    Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions


    Original     		PDF

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010

    PLCC pin configuration

    Abstract: 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket
    Text: SOCKET ADAPTERS CALIFORNIA INTEGRATION COORDINATORS Flash Programming Adapters • ■ ■ ■ ■ ■ ■ ■ ■ ■ Signal integrity - using 6 layer board design - decoupling capacitors optional High quality - durable and easy-touse sockets Long life - plug-in socket option


    Original     		PDF FlashIC-56TS-44D-B6-YAM-S CIC-56TS-44D-C6-YAM-S CIC-56TS-48D-A6-YAM-S CIC-56TS-40D-D6-YAM-S CIC-56TS-48D-B6-YAM-S CIC-56TS-40D-E6-YAM-S CIC-44PS-40D-A6-YAM PLCC pin configuration 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket

    39BASE-0101

    Abstract: 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Data I/O Corp. 10525 Willows Rd. NE Redmond, WA 98073 REF: Intel and Data I/O Corp. Test Services Agreement dated 08/15/95 Dear PROM Programmer Vendor: I am pleased to inform Data I/O Corp. that your PROM programming hardware and software has passed


    Original     		PDF FM3-83 39BASE-0101 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901

    E28F016SV-70

    Abstract: E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 SMS Mikrocomputer Systeme GmbH Im Grund 15 D-88239 Wangen, Germany REF: Intel and SMS Mikrocomputer Systeme GmbH Test Services Agreement dated 05/08/96 Dear PROM Programmer Vendor:


    Original     		PDF FM3-83 D-88239 PLUS48 PLUS48 E28F016SV-70 E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s

    report on PLCC

    Abstract: TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP
    Text: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM


    Original     		PDF FM3-83 report on PLCC TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP

    TN80C196KC20

    Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
    Text: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.


    Original     		PDF PLCC44 PLCC68 TN80C196KC20 TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020

    34064p

    Abstract: 28F010T "WORM"
    Text: intei A P ' 3 4 3 APPLICATION NOTE Solutions for High Density Applications Using Intel Flash Memory MARKUS A. LEVY DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION March 1994 Order Number: 292079-005 6-185 Solutions For High Density Applications Using Intel Flash Memory


    OCR Scan     		PDF

    SSC16E

    Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program


    OCR Scan     		PDF 28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020

    intel 28F020

    Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
    Text: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program


    OCR Scan     		PDF 007L5< 2048K Nonvol020-200 F28F020-150 F28F020-200 TE28F020-90 TF28F020-90 TE28F020-150 TF28F020-150 ER-20, intel 28F020 flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020

    intel eprom Intelligent algorithm

    Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
    Text: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read


    OCR Scan     		PDF 28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N

    28f020-150

    Abstract: 28F020-200 intel 28F020
    Text: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical


    OCR Scan     		PDF 28F020 2048K TE28F020-150 TF28F020-150 TE28F020-90 TF28F020-90 ER-20, ER-24, ER-28, RR-60, 28f020-150 28F020-200 intel 28F020

    P28F020-150

    Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for


    OCR Scan     		PDF 28F020 2048K AP-325 -80V05, -80V05 28F020

    n28f020-150

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		PDF 28F020 2048K -80V05, -80V05 n28f020-150

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		PDF 28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150