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    SAMSUNG TOGGLE MODE NAND Search Results

    SAMSUNG TOGGLE MODE NAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-XP85B102DX-000 Amphenol Cables on Demand Amphenol SF-XP85B102DX-000 SFP28 25GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (Duplex LC Connector) by Amphenol XGIGA [XP85B102DX] Datasheet
    SF-QXP85B402D-000 Amphenol Cables on Demand Amphenol SF-QXP85B402D-000 QSFP28 100GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (MTP/MPO Connector) by Amphenol XGIGA [QXP85B402D] Datasheet
    FO-DLSCDLLC00-002 Amphenol Cables on Demand Amphenol FO-DLSCDLLC00-002 SC-LC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x SC Male to 2 x LC Male 2m Datasheet
    FO-LSDUALSCSM-003 Amphenol Cables on Demand Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m Datasheet

    SAMSUNG TOGGLE MODE NAND Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
    Text: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF


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    KAE00C400M 16Mx8) 4Mx16) 111-Ball SAMSUNG MCP samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR PDF

    toggle mode nand samsung

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG K5Q6432YCM-T010 T010 SAMSUNG NAND Flash Qualification Report 64mb nand flash
    Text: K5Q6432YCM - T010 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Dec. 19th 2000 Advanced Information 0.1 Changed Device name K5Q6420YCM-TO70 -> K5Q6432YCM-T010


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    K5Q6432YCM 2Mx16) K5Q6420YCM-TO70 K5Q6432YCM-T010 100ns. 200uA 250uAo 69-Ball 08MAX toggle mode nand samsung samsung toggle mode NAND NAND FLASH SAMSUNG K5Q6432YCM-T010 T010 SAMSUNG NAND Flash Qualification Report 64mb nand flash PDF

    NAND FLASH SAMSUNG

    Abstract: samsung toggle mode NAND toggle mode nand samsung K5Q6432YCM-T010 T010 DQ01
    Text: K5Q6432YCM - T010 Preliminary Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Dec. 19th 2000 Advanced Information 0.1 Changed Device name


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    K5Q6432YCM 2Mx16) K5Q6420YCM-TO70 K5Q6432YCM-T010 100ns. f10us 69-Ball 08MAX NAND FLASH SAMSUNG samsung toggle mode NAND toggle mode nand samsung K5Q6432YCM-T010 T010 DQ01 PDF

    MCP 67 MV- A2

    Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
    Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1


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    KAA00B209M-TGxx 16Mx16) Flash/32M 2Mx16) UtRAM/128M 2Mx16x4Banks) 127-Ball 80x12 08MAX MCP 67 MV- A2 SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density PDF

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


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    KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60 PDF

    SAMSUNG MCP

    Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
    Text: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002


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    KAA00B606A 16Mx16) Flash/64M 4Mx16) UtRAM/128M 2Mx16x4Banks) 90/100ns 127-Ball 80x12 SAMSUNG MCP MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec PDF

    samsung toggle mode NAND

    Abstract: s3c2450 SMDK2450 Samsung EMMC "boot mode" movinand S3C64 samsung emmc boot Samsung eMMC irom application note s3c245
    Text: Application Note Internal ROM Booting S3C2450/51/16X RISC Microprocessor Oct 16, 2008 Preliminary REV 0.041 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available.


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    S3C2450/51/16X SMDK2450/51/16 samsung toggle mode NAND s3c2450 SMDK2450 Samsung EMMC "boot mode" movinand S3C64 samsung emmc boot Samsung eMMC irom application note s3c245 PDF

    s3c2450

    Abstract: samsung EMMC user guide Samsung board Board design guide eMMC SAMSUNG emmc samsung emmc boot movinand irom application note iNAND eMMC 4 41 emmc spec SAMSUNG moviNAND
    Text: Application Note Internal ROM Booting S3C2450X RISC Microprocessor June 25, 2008 Preliminary REV 0.03 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available.


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    S3C2450X SMDK2450 s3c2450 samsung EMMC user guide Samsung board Board design guide eMMC SAMSUNG emmc samsung emmc boot movinand irom application note iNAND eMMC 4 41 emmc spec SAMSUNG moviNAND PDF

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


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    KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100 PDF

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


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    KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402 PDF

    JTAG2440

    Abstract: s3c2410 JTAG2410
    Text: JTAG-Booster for Samsung S3C24xx P.O: Box 1103 Kueferstrasse 8 Tel. +49 7667 908-0 sales@fsforth.de • • • • D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for Samsung S3C24xx Copyright  1995.2003:


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    S3C24xx D-79200 D-79206 S3C24xxa JTAG2440 s3c2410 JTAG2410 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


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    KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp PDF

    lpddr2

    Abstract: lpddr2 datasheet samsung lpddr2 samsung* lpddr2 LPDDR2 1Gb Memory lpddr2 spec lpddr1 samsung toggle mode NAND lpddr2 samsung DDR3L lpddr2
    Text: Green Memory Moving into Driver’s Seat Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing Mueez Deen, Director of Mobile Memory Marketing Steven Peng, SSD Technical Marketing Samsung Semiconductor, Inc. 1/? Agenda Industry Trends: IT & Mobile


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    Samsung 2Gb 3V MLC Nand flash

    Abstract: KFM5616Q1A-DEB5
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


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    MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Samsung 2Gb 3V MLC Nand flash KFM5616Q1A-DEB5 PDF

    F221h

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


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    MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 F221h PDF

    KFM5616Q1A-DEB6

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


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    MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 KFM5616Q1A-DEB6 PDF

    Toggle DDR NAND flash

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


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    MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 Toggle DDR NAND flash PDF

    Toggle DDR NAND flash

    Abstract: samsung toggle mode NAND
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


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    MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Toggle DDR NAND flash samsung toggle mode NAND PDF

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


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    MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 PDF

    Toggle DDR NAND flash Samsung

    Abstract: 0000h 63FBGA KFM1216Q2A-DEB5
    Text: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY


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    MuxOneNAND512 KFM1216Q2A-DEB5) 512Mb KFM1216Q2A-DEB5 63FBGA 63-FBGA-9 Toggle DDR NAND flash Samsung 0000h KFM1216Q2A-DEB5 PDF

    samsung toggle mode NAND

    Abstract: No abstract text available
    Text: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY


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    MuxOneNAND512 KFM1216Q2A-DEB5) 512Mb KFM1216Q2A-DEB5 63FBGA 63-FBGA-9 samsung toggle mode NAND PDF

    samsung toggle mode NAND

    Abstract: No abstract text available
    Text: MuxOneNAND512 KFM1216Q2A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB6) 1.0 FLASH MEMORY


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    MuxOneNAND512 KFM1216Q2A-DEB6) 512Mb KFM1216Q2A-DEB6 63FBGA 63-FBGA-9 samsung toggle mode NAND PDF

    Untitled

    Abstract: No abstract text available
    Text: Lucent Technologies ND14 NAND FlashTAD— CID/AECS Information Manual August 1998 2 General Specifications 2.1 User Hardware Basics 2.1.1 Power Supply System power supply requirements are 5.0 VDC. For additional information, see the following sections of the DSP1609 data sheet: Table 2. DSP1609 Power Supply


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    DSP1609 PDF