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    SAMSUNG FLASH QUALIFICATION AND RELIABILITY Search Results

    SAMSUNG FLASH QUALIFICATION AND RELIABILITY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG FLASH QUALIFICATION AND RELIABILITY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
    Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.


    Original     		PDF 128Mb industria1980 30pcs 48TSOP1 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0

    SAMSUNG NOR Flash Qualification Report

    Abstract: BGA48 M29W008A QRMS9901 LGA-48
    Text: QRMS9901 QUALIFICATION REPORT M36W108A T6X-U35: 8 Mbit x8 Flash Memory and 1 Mbit (x8) SRAM Multiple Memory INTRODUCTION The M36W108A is a Multiple Memory device contains an 8 Mbit (3V) Flash memory and a 1 Mbit SRAM, both organized by 8 bits. The two components are distinguishable by use of the three chip enable lines,


    Original     		PDF QRMS9901 M36W108A T6X-U35: M29W008A T6X-U35 SAMSUNG NOR Flash Qualification Report BGA48 QRMS9901 LGA-48

    SAMSUNG NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor

    K9F1208U0C-PCB0

    Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C o824KB K9F1208U0C-FIB00 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB0T K9F1208U0C-PCB0 marking date code samsung semiconductor K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T

    K9F1208R0C-JIB0

    Abstract: K9F1208U0C K9F1208U0C-PCB0 K9F1208R0C-JIB K9F1208R0C K9F1208R0C-JIB00 SAMSUNG NOR Flash Qualification Report
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208R0C-JIB0T 824KB K9F1208R0C-JIB00 K9F1208R0C-JIB0T K9F1208R0C-JIB0 K9F1208U0C-PCB0 K9F1208R0C-JIB SAMSUNG NOR Flash Qualification Report

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report

    K9F1G08U0D-SCB0

    Abstract: K9F1G08U0D K9F1G08U0C K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D
    Text: FLASH MEMORY K9F1G08U0D K9F1G08U0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08U0D K9F1G08U0C 200us 700us K9F1G08U0D 250us 750us K9F1G08U0D-SCB0 K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D

    K9F2G08U0M-PCB0

    Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
    Text: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K4G08U1M K9F2G08U0M K9XXG08UXM 200mV K9F2G08U0M-PCB0 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M

    K9F2G08U0B-PCB0

    Abstract: K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B-PCB0 K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung

    K9F2G08U0B

    Abstract: K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B K9F2G08B0B-P
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B-P

    K9F1208U0C-PCB

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB

    K9F8G08U0A-P

    Abstract: K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0
    Text: Advance FLASH MEMORY K9WBG08U5A K9F8G08U0A K9F8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U5A K9F8G08U0A 100ns) K9F8G08U0A-P K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History History Draft Date Remark 0.0 1. Initial issue July. 5. 2001


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    Untitled

    Abstract: No abstract text available
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001


    Original     		PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0

    K9F1208U0C-PCB0

    Abstract: K9F1208U0C k9f1208u0cpcb0 k9f1208r0c K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C 100ns) K9F1208U0C-PCB0 K9F1208U0C k9f1208u0cpcb0 K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J

    K9F1208U0C-PCB0

    Abstract: K9F1208U0C K9F1208* technical K9F1208X0C K9F1208B0C-P K9F1208R0C k9f1208u0cpcb0 K9F1208B0C K9F1208R0C-J K9F1208U0C-P
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C 100ns) K9F1208U0C-PCB0 K9F1208U0C K9F1208* technical K9F1208X0C K9F1208B0C-P k9f1208u0cpcb0 K9F1208B0C K9F1208R0C-J K9F1208U0C-P

    K9F1G08U0M-YCB0

    Abstract: K9F1G08Q0M-YCB0 Flash Memory SAMSUNG K9F1G08U0M-Y K9F1G08U0M-FCB0 K9F1G08U0M-VCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16X0M K9F1G08X0M
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original     		PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 K9F1G08U0M-YCB0 K9F1G08Q0M-YCB0 Flash Memory SAMSUNG K9F1G08U0M-Y K9F1G08U0M-FCB0 K9F1G08U0M-VCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16X0M K9F1G08X0M

    K9F2808Q0B

    Abstract: K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y K9F2808U0B-YCB0 flash memory 16M
    Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001


    Original     		PDF K9F2808Q0B-DCB0 K9F2808U0B-VCB0 K9F2808Q0B K9F2808U0B-YCB0 K9F2808U0B-DCB0 K9F2808U0B K9F2808Q0B 200us 300us 100ns K9F2808Q0B-D K9F2808U0B-Y flash memory 16M

    K9F2808U0B-YCB0

    Abstract: K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y
    Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001


    Original     		PDF K9F2808Q0B-DCB0 K9F2808U0B-VCB0 K9F2808Q0B K9F2808U0B-YCB0 K9F2808U0B-DCB0 K9F2808U0B K9F2808Q0B 200us 300us 100ns K9F2808Q0B-D K9F2808U0B-Y

    Untitled

    Abstract: No abstract text available
    Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001


    Original     		PDF K9F2808Q0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-YCB0 K9F2808U0B-DCB0 K9F2808Q0B K9F2808U0B K9F2808Q0B 200us 300us 100ns

    INCOMING RAW MATERIAL INSPECTION form

    Abstract: IC 34992 ucl 11
    Text: QUALITY ASSURANCE and RELIABILITY PROGRAM 1. Introduction Samsung utilizes rigorous qualification and reliability programs to monitor the integrity of its devices. All industry' standard and various non-standard stresses are run. Testing is done not only to collect data, but also to detect


    OCR Scan     		PDF

    FTG-12

    Abstract: INCOMING RAW MATERIAL FILM INSPECTION procedure ADE-6 Sample form for INCOMING Inspection of RAW MATERIAL mosfet 1500v MTBF UCL 2003 INCOMING RAW MATERIAL INSPECTION method
    Text: QUALITY ASSURANCE and RELIABILITY PROGRAM 1. Introduction Samsung utilizes rigorous qualification and reliability programs to m onitor the integrity o f its devices. All industry standard and various non-standard stresses are run. Testing is done not only to collect data, but also to detect


    OCR Scan     		PDF