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    SAMSUNG CAPACITANCE BAR CODE Search Results

    SAMSUNG CAPACITANCE BAR CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SAMSUNG CAPACITANCE BAR CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCSCS1E106

    Abstract: TCSCS1C106 TCSCS1V335 TCSCN1A226 TCSCS1V TCSCE1A476 TCSCN1C105 TCSCS1C685 TCSCS1A106 TCSCS0J106
    Text: SCN Series Solid Tantalum Chip Capacitors FEATURES Molded Case available in four case codes. Compatible with automatic pick and place equipment. Meets or Exceeds EIA standard 53BAAC PERFORMANCE / ELECTRICAL CHARACTERISTICS •Operating Temperature: -55℃ to +85℃ To +125℃ with voltage derating


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    PDF 53BAAC 35WVDC 178mm 330mm TCSCS1E106 TCSCS1C106 TCSCS1V335 TCSCN1A226 TCSCS1V TCSCE1A476 TCSCN1C105 TCSCS1C685 TCSCS1A106 TCSCS0J106

    SAMSUNG DDR4

    Abstract: FR24 FR29 speed pid.c SAMSUNG tv scheme FRQ24
    Text: ADVANCE INFORMATION KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.


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    PDF KS0123 SAMSUNG DDR4 FR24 FR29 speed pid.c SAMSUNG tv scheme FRQ24

    Solid state CCIR ca 152

    Abstract: SAMSUNG DDR4 2943666671 FRQ24 SCH-01 SCL 1058 Video cvbs 656 PID07 BEAD, WOUND FERRITE, 2943666671 samsung ddr3
    Text: KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.


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    PDF KS0123 May/04/2000 Solid state CCIR ca 152 SAMSUNG DDR4 2943666671 FRQ24 SCH-01 SCL 1058 Video cvbs 656 PID07 BEAD, WOUND FERRITE, 2943666671 samsung ddr3

    TCSCS1C106

    Abstract: TCSCS TCSCS1C KSD 303 TCSCN TCSCS1A476 TCSCE1C TCSCS1a106 TCSCS1A tcscs1
    Text: 0104 SOLID TANTALUM CAPACITORS ISO 9001 International Organization for Standardization Registered by UL to ISO 9001 under UL’s accreditation by Raad voor de Certificatie RvC , the Dutch Council for Certification. Registration NO:A1901(1994.6.17) WE WILL PROVIDE A CUSTOMER WITH


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    PDF A1901 D-75228 D-75173 TCSCS1C106 TCSCS TCSCS1C KSD 303 TCSCN TCSCS1A476 TCSCE1C TCSCS1a106 TCSCS1A tcscs1

    conclusion of zener diode voltage report

    Abstract: 1314 MARKING DIODE lrc zener diode
    Text: 乐山无线电股份有限公司 Leshan Radio Company, Ltd. 产 品 规 格 书 Specification of Products Samsung VD TO CUSTOMER CUSTOMER P.N. LRC P.N. LRC099-04BT1G DESCRIPTION SC-70-6 ESD Protection Array APPROVE BY 接受印 ACKNOWLEDGEMENT 兹证明此份资料已经收到


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    PDF LRC099-04BT1G SC-70-6 LRC099-04BT1G 350mm3 J-STD-020B, conclusion of zener diode voltage report 1314 MARKING DIODE lrc zener diode

    Untitled

    Abstract: No abstract text available
    Text: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition


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    PDF Si1021R SC-75A OT-416) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    PDF Si1022R SC-75A OT-416) 2002/95/EC Si1022R-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1032R/X Vishay Siliconix N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching


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    PDF Si1032R/X 2002/95/EC SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.420 at VGS = 4.5 V ID (A) 0.606 Qg (Typ.) 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.150 a APPLICATIONS SC75-3L G • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,


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    PDF Si1046R SC75-3L Si1046R-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1031R/X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 • Halogen-free According to IEC 61249-2-21


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    PDF Si1031R/X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si1002R

    Abstract: No abstract text available
    Text: Si1002R www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) 0.560 at VGS = 4.5 V 0.5 0.620 at VGS = 2.5 V 0.2 0.700 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (TYP.) 0.72 nC • •


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    PDF Si1002R SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


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    PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


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    PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: S3C2800 32-BIT RISC MICROPROCESSOR USER'S MANUAL Revision 0 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible


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    PDF S3C2800 32-BIT S3C2800 208-LQFP-2828 208-LQFP-2828

    Untitled

    Abstract: No abstract text available
    Text: S3C2800 32-BIT RISC MICROPROCESSOR USER'S MANUAL Revision 1.2 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible


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    PDF S3C2800 32-BIT S3C2800 208-LQFP-2828 208-LQFP-2828

    samsung marking wc

    Abstract: No abstract text available
    Text: S3C2800 32-BIT RISC MICROPROCESSOR USER'S MANUAL Revision 1.1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible


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    PDF S3C2800 32-BIT S3C2800 208-LQFP-2828 208-LQFP-2828 samsung marking wc

    ST ARM CORE 1825

    Abstract: No abstract text available
    Text: S3C2800 32-BIT RISC MICROPROCESSOR USER'S MANUAL Revision 0 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible


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    PDF S3C2800 32-BIT S3C2800 208-LQFP-2828 208-LQFP-2828 ST ARM CORE 1825

    schematic diagram samsung crt monitor

    Abstract: ARM250 schematic diagram display samsung ks24c08 AMD socket AM3 pin diagram AMD socket AM3 diagram MAX232C schematic diagram samsung led amd am3 S3C2400X01
    Text: S3C2800 32-BIT RISC MICROPROCESSOR APPLICATION NOTE Revision 0 Important Notice Information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


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    PDF S3C2800 32-BIT S3C2800 SMDK2800 schematic diagram samsung crt monitor ARM250 schematic diagram display samsung ks24c08 AMD socket AM3 pin diagram AMD socket AM3 diagram MAX232C schematic diagram samsung led amd am3 S3C2400X01

    Untitled

    Abstract: No abstract text available
    Text: KS0123 Multimedia ELECTRONICS DIGITAL VIDEO ENCODER The KS0123 multi - standard video encoder converts CCIR 656 8 - bit multiplexed digital component video into analog baseband signals. It output ccomposite video C V BS and S - Video simultaneoulsy at three


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    PDF KS0123 KS0123 33b4b 32-PLCC-REC. 44-PLCC-SQ.

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 23E D • 7=^4142 0000a2b 2 ■ r - KS82C289 'Z 'x - j Z 'G BUS ARBITER FEATURES/BEN EFITS D ESCRIPTIO N • Supports serial, parallel, and rotating priority resolving schemes The Samsung KS82C289 20-pin CM OS Bus Arbiter signals to request, possess, and release the system bus.


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    PDF 0000a2b KS82C289 KS82C289 20-pin 20-pln 82C289

    Untitled

    Abstract: No abstract text available
    Text: DYNAMIC RAM CONTROLLERS KS84C21/C22 Preliminary FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic R A M DRAM controllers. They simplify the interface between the microprocessor and the DRAM


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    PDF KS84C21/C22 KS84C21 KS84C22 68-Pin 84-Pin 84CXX 84C21 84C22

    KS84C21

    Abstract: MEC 2MHZ SS52M 430-0144
    Text: KS84C21/C22 ¡ H SAM SUNG DYNAMIC RAM CONTROLLERS Preliminary Semiconductor September 1988 FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic RAM DRAM controllers. They simplify


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    PDF KS84C21/C22 KS84C21 KS84C22 MEC 2MHZ SS52M 430-0144

    Untitled

    Abstract: No abstract text available
    Text: KS82C289 BUS ARBITER FEATURES/BENEFITS DESCRIPTION • Supports serial, parallel, and rotating priority resolving schemes The Samsung KS82C289 20-pin CMOS Bus Arbiter signals to request, possess, and release the system bus. External logic determines w hich bus cycle requires the


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    PDF KS82C289 KS82C289 20-pin 82C289