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    SI1012R Price and Stock

    Vishay Siliconix SI1012R-T1-GE3

    MOSFET N-CH 20V 500MA SC75A
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    DigiKey SI1012R-T1-GE3 Reel 165,000 3,000
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    SI1012R-T1-GE3 Cut Tape 4,902 1
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    • 10 $0.366
    • 100 $0.2547
    • 1000 $0.16165
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    SI1012R-T1-GE3 Digi-Reel 1
    • 1 $0.43
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    RS SI1012R-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI1012R-T1-GE3 36,000 1
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    Vishay Siliconix SI1012R-T1-E3

    MOSFET N-CH 20V 500MA SC75A
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    DigiKey SI1012R-T1-E3 Cut Tape 1
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    SI1012R-T1-E3 Digi-Reel 1
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    SI1012R-T1-E3 Reel 3,000
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    Bristol Electronics SI1012R-T1-E3 3,500
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    SI1012R-T1-E3 1,585 9
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    Quest Components SI1012R-T1-E3 1,268
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    Vishay Intertechnologies SI1012R-T1-GE3

    Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75A T/R - Product that comes on tape, but is not reeled (Alt: 69W7168)
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    Avnet Americas SI1012R-T1-GE3 Ammo Pack 10 Weeks, 4 Days 1
    • 1 $0.43
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    SI1012R-T1-GE3 Reel 3,000
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    SI1012R-T1-GE3 Reel 3,000
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    Verical SI1012R-T1-GE3 6,000 3,000
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    Arrow Electronics SI1012R-T1-GE3 6,000 6 Weeks 3,000
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    Newark SI1012R-T1-GE3 Cut Tape 17,394 1
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    SI1012R-T1-GE3 Bulk 2,343 1
    • 1 $0.464
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    SI1012R-T1-GE3 Reel 3,000
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    SI1012R-T1-GE3 Reel 3,000
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    Bristol Electronics SI1012R-T1-GE3 2,088
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    Quest Components SI1012R-T1-GE3 6,782
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    SI1012R-T1-GE3 38
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    TTI SI1012R-T1-GE3 Reel 48,000 3,000
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    TME SI1012R-T1-GE3 1,842 3
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    Avnet Asia SI1012R-T1-GE3 8 Weeks 3,000
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    Chip1Stop SI1012R-T1-GE3 6,000
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    EBV Elektronik SI1012R-T1-GE3 7 Weeks 3,000
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    Vishay BLH SI1012R-T1-GE3

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    Bristol Electronics SI1012R-T1-GE3 8,478 8
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    • 100 $0.3375
    • 1000 $0.135
    • 10000 $0.0911
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    Vishay Intertechnologies SI1012R-T1-E3

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    Bristol Electronics SI1012R-T1-E3 5,357
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    Quest Components SI1012R-T1-E3 4,285
    • 1 $0.848
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    • 1000 $0.2544
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    Find more SI1012R price and stock on Findchips.com

    SI1012R Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si1012R Vishay Intertechnology N-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1012R Vishay Siliconix MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth, Original PDF
    SI1012R Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1012R-E3 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-75A Original PDF
    Si1012R-T1 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL Original PDF
    Si1012R-T1 Vishay Intertechnology N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1012R-T1-E3 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL Original PDF
    SI1012R-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A Original PDF
    SI1012R-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A Original PDF

    SI1012R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC-75

    Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 Si1012R-Ted 08-Apr-05 SC-75 SC-89 Si1012R-T1 Si1012X-T1

    Si1012X-T1-GE3

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 18-Jul-08 Si1012X-T1-GE3

    Si1012R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1012R S-51298Rev. 27-Jul-05

    Si1012R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1012R 400mA 150mA, 200mA, 250mA 19-Feb-04

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI1012X-T1-GE3

    Abstract: si1012r-t1-ge3
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI1012X-T1-GE3 si1012r-t1-ge3

    Untitled

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11

    AN609

    Abstract: Si1012R n mosfet pspice parameters
    Text: Si1012R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1012R AN609 02-Apr-07 n mosfet pspice parameters

    Untitled

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 S-50366--Rev. 28-Feb-05

    SC-75

    Abstract: SC-75A SC-89 PC2255
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11 SC-75 SC-89 PC2255

    Si1012R-T1-E3

    Abstract: Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-75A SC-89 SI1012R-T1-GE3
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 Si1012R-T1-E3 Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 SI1012R-T1-GE3

    SI1012X-T1-E3

    Abstract: Si1012X-T1-GE3 SI1012R/X SC-75 SC-75A SC-89 Si1012R-T1-E3 S-81543-Rev
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 18-Jul-08 SI1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 Si1012R-T1-E3 S-81543-Rev

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-75

    Abstract: SC-75A SC-89 Si1012R Si1012X
    Text: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF Si1012R/X S-02464--Rev. 25-Oct-00 SC-75 SC-75A SC-89 Si1012R Si1012X

    Si1012R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1012R 18-Jul-08

    SC89-3

    Abstract: si1012r-t1-ge3
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11 SC89-3 si1012r-t1-ge3

    SC-75

    Abstract: SC-75A SC-89 Si1012R Si1012X
    Text: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF Si1012R/X S-02464--Rev. 25-Oct-00 SC-75 SC-75A SC-89 Si1012R Si1012X

    Untitled

    Abstract: No abstract text available
    Text: TPS61020, TPS61024 TPS61025, TPS61027 3,25 mm x 3,25 mm www.ti.com SLVS451A – SEPTEMBER 2003 – REVISED APRIL 2004 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES • • • • • • • • • • • DESCRIPTION 96% Efficient Synchronous Boost Converter


    Original     		PDF TPS61020, TPS61024 TPS61025, TPS61027 SLVS451A 200-mA 500-mA

    marking BDR

    Abstract: No abstract text available
    Text: TPS61020, TPS61024 TPS61025, TPS61027 3,25 mm x 3,25 mm www.ti.com SLVS451A – SEPTEMBER 2003 – REVISED APRIL 2004 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES • • • • • • • • • • • DESCRIPTION 96% Efficient Synchronous Boost Converter


    Original     		PDF TPS61020, TPS61024 TPS61025, TPS61027 SLVS451A 200-mA 500-mA marking BDR

    MARKING BDR

    Abstract: SLVS451
    Text: TPS61020, TPS61024 TPS61025, TPS61027 3,25 mm x 3,25 mm www.ti.com SLVS451 – SEPTEMBER 2003 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES DESCRIPTION • 96% Efficient Synchronous Boost Converter – 200-mA Output Current From 0.9-V Input


    Original     		PDF TPS61020, TPS61024 TPS61025, TPS61027 SLVS451 200-mA 500-mA QFN-10 MARKING BDR SLVS451

    LED IR for Tx, RX pair

    Abstract: TFBS4711 TFBS4650 TFBS4652 TFBS6614 TFDU4100 TFDU4300 TFDU6102 TFDU8108 VFIR controller
    Text: Reference Layouts and Circuit Diagrams Vishay Semiconductors Reference Layouts and Circuit Diagrams For testing and comparing test results a common base is necessary. The layout of a test board can have a quite big influence on parameters, especially on rise and fall time and also on jitter.


    Original     		PDF RS232 OIM4232. 20-Sep-06 LED IR for Tx, RX pair TFBS4711 TFBS4650 TFBS4652 TFBS6614 TFDU4100 TFDU4300 TFDU6102 TFDU8108 VFIR controller

    marking BDR

    Abstract: 10SON
    Text: TPS61020, TPS61024 TPS61025, TPS61027, TPS61028 3,25 mm x 3,25 mm www.ti.com SLVS451C – SEPTEMBER 2003 – REVISED JUNE 2005 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES • • • • • • • • • • • DESCRIPTION 96% Efficient Synchronous Boost Converter


    Original     		PDF TPS61020, TPS61024 TPS61025, TPS61027, TPS61028 SLVS451C 200-mA 500-mA marking BDR 10SON

    VR41

    Abstract: EPCOS 1400 09 O
    Text: TPS61020, TPS61024, TPS61025 TPS61026, TPS61027, TPS61028 TPS61029 3,25 mm x 3,25 mm www.ti.com SLVS451D – SEPTEMBER 2003 – REVISED FEBRUARY 2006 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER FEATURES 1 • 96% Efficient Synchronous Boost Converter • Output Voltage Remains Regulated When


    Original     		PDF TPS61020, TPS61024, TPS61025 TPS61026, TPS61027, TPS61028 TPS61029 SLVS451D TPS6102x VR41 EPCOS 1400 09 O

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS