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    SAMSUNG 256MB NAND FLASH QUALIFICATION REPORT Search Results

    SAMSUNG 256MB NAND FLASH QUALIFICATION REPORT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DRV8872DDARQ1 Texas Instruments Automotive 3.6A Brushed DC Motor Driver With Fault Reporting 8-SO PowerPAD -40 to 125 Visit Texas Instruments Buy
    DRV8872DDAR Texas Instruments 3.6A Brushed DC Motor Driver With Fault Reporting (PWM Ctrl) 8-SO PowerPAD -40 to 125 Visit Texas Instruments Buy
    DRV8872DDA Texas Instruments 3.6A Brushed DC Motor Driver With Fault Reporting (PWM Ctrl) 8-SO PowerPAD -40 to 125 Visit Texas Instruments Buy
    TPS2013APWP Texas Instruments 2.6A, 2.7 to 5.5V Single High-Side MOSFET Switch IC, No Fault Reporting, Active-Low Enable 14-HTSSOP -40 to 85 Visit Texas Instruments Buy
    TPS2015D Texas Instruments 1.1A, 4-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC Visit Texas Instruments
    TPS2024IDRQ1 Texas Instruments Automotive 2.7V to 5.5V, 2A Power Distribution Switch with Hot-Swap Compatible, Fault Report 8-SOIC -40 to 85 Visit Texas Instruments Buy

    SAMSUNG 256MB NAND FLASH QUALIFICATION REPORT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl
    Text: APPLICATION NOTE for NAND Flash Memory Revision 2.0 Memory Product & Technology Division 1999. 12. 28 Product Planning & Application Engineering The Leader in Memory Technology 1 ELECTRONICS TABLE OF CONTENTS ¡ áINTRODUCTION 5. UTILIZING THE DEVICE IN THE


    Original     		PDF 128Mb 256Mb) 256Mb 512Mb 500us SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl

    Untitled

    Abstract: No abstract text available
    Text: Halogen Free Value Added SATA-Disk Module I Specification for 7P/180D March 1, 2011 Version 1.2 Apacer Technology Inc. th th 4 Fl., 75 Xintai 5 Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889 Value Added SATA-Disk ModuleⅠ


    Original     		PDF 7P/180D

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    Toggle DDR NAND flash

    Abstract: samsung toggle mode NAND
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Toggle DDR NAND flash samsung toggle mode NAND

    KFM5616Q1A-DEB6

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 KFM5616Q1A-DEB6

    Samsung 2Gb 3V MLC Nand flash

    Abstract: KFM5616Q1A-DEB5
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Samsung 2Gb 3V MLC Nand flash KFM5616Q1A-DEB5

    OneNAND

    Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 256Mb 67FBGA KFG5616Q1A-PEB6 48TSOP1 KFG5616U1A-DIB6 KFG5616U1A-PIB6 OneNAND SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h

    schematic lcd monitor samsung 18,5 inch

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Report oneNand flash oneNand SAMSUNG 256Mb NAND Flash Qualification Reliability 4GB MLC NAND NAND flash memory internal flash corruption KFG5616Q1A-DEB5 mlc nand flash lsb msb
    Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB5 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND256 KFG5616x1A-xxB5) KFG5616Q1A-DEB5 256Mb 67FBGA KFG5616Q1A-PEB5 48TSOP1 KFG5616U1A-DIB5 KFG5616U1A-PIB5 schematic lcd monitor samsung 18,5 inch SAMSUNG 256Mb NAND Flash Qualification Report oneNand flash oneNand SAMSUNG 256Mb NAND Flash Qualification Reliability 4GB MLC NAND NAND flash memory internal flash corruption KFG5616Q1A-DEB5 mlc nand flash lsb msb

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6

    F221h

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 F221h

    Toggle DDR NAND flash

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 Toggle DDR NAND flash

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7

    onenand

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB5) KFG5616Q1A-DEB5 256Mb 67FBGA KFG5616Q1A-PEB5 48TSOP1 KFG5616D1A-DEB5 KFG5616D1A-PEB5 onenand

    Flash MCp nand DRAM 107-ball

    Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
    Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00J007M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball 80x13 Flash MCp nand DRAM 107-ball dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-DEB6 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB6


    Original     		PDF OneNAND256 KFG5616x1A-DEB6) OneNAND256 KFG5616Q1A-DEB6 KFG5616D1A-DEB6 KFG5616U1A-DIB6 67FBGA /48TSOP1

    SAMSUNG MCP

    Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
    Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657DCM-F015 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball SAMSUNG MCP Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball

    SAMSUNG MCP

    Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
    Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0


    Original     		PDF KBE00D002M-F407 16Mx16) 2Mx16x4Banks) 128Mb 137-Ball 80x14 SAMSUNG MCP F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA

    SAMSUNG MCP

    Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
    Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00E007M-FGGV 256Mb 16Mx16) 4Mx16x4Banks) 107-Ball 80x13 SAMSUNG MCP KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball

    SAMSUNG 256Mb NAND Flash Qualification Reliability

    Abstract: K9K5608U0M-YCB0 48-PIN K9F5608U0M
    Text: K9K5608U0M-YCB0, K9K5608U0M-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 1. Initial issue Draft Date Remark June 19th 2000 Final - The followings are disprepancy items between K9F5608U0M 256Mb single die and K9K5608U0M (256Mb DDP).


    Original     		PDF K9K5608U0M-YCB0, K9K5608U0M-YIB0 K9F5608U0M 256Mb K9K5608U0M 256Mb 48-PIN 1220F SAMSUNG 256Mb NAND Flash Qualification Reliability K9K5608U0M-YCB0 K9F5608U0M

    Untitled

    Abstract: No abstract text available
    Text: Halogen Free Value Added SATA-Disk Module I Specification for 7P/90D March 1, 2011 Version 1.1 Apacer Technology Inc. th th 4 Fl., 75 Xintai 5 Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889 Value Added SATA-Disk ModuleⅠ


    Original     		PDF 7P/90D

    Samsung MCP

    Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
    Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657ACM-F015 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Samsung MCP MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report

    SAMSUNG MCP

    Abstract: MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp
    Text: Preliminary MCP MEMORY KAL00B00BM-FGV X V(X) Document Title Multi-Chip Package MEMORY 256M Bit (16Mx16) Nand Flash / 128M Bit (4Mx8x4Banks) Mobile SDRAM*2 Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial draft. - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAL00B00BM-FGV 16Mx16) 256Mb 127-Ball 80x12 08MAX SAMSUNG MCP MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp

    K9F1G08U0D-SCB0

    Abstract: K9F1G08U0D K9F1G08U0C K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D
    Text: FLASH MEMORY K9F1G08U0D K9F1G08U0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08U0D K9F1G08U0C 200us 700us K9F1G08U0D 250us 750us K9F1G08U0D-SCB0 K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D