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    SAMSUNG 128MB DDR SDRAM 0.3 Search Results

    SAMSUNG 128MB DDR SDRAM 0.3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877DBVG Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DBVG8 Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877ANLG8 Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    SAMSUNG 128MB DDR SDRAM 0.3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDR333

    Abstract: DDR400 DDR500 K4H281638L K4H281638L-LCCC
    Text: DDR SDRAM K4H281638L 128Mb L-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    PDF K4H281638L 128Mb DDR333 DDR400 DDR500 K4H281638L K4H281638L-LCCC

    K4H281638L

    Abstract: k4h281638l-lccc DDR333 DDR400 DDR500
    Text: DDR SDRAM K4H281638L 128Mb L-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    PDF K4H281638L 128Mb K4H281638L k4h281638l-lccc DDR333 DDR400 DDR500

    M470L3224HU0

    Abstract: No abstract text available
    Text: 128MB, 256MB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb H-die 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF 128MB, 256MB 184pin 16Mx16 K4H561638H M470L3224HU0

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC/ECC 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF 128MB, 256MB, 512MB 184pin 256Mb 64/72-bit 32Mx8 K4H560838F

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF 128MB, 256MB 184pin 16Mx16 K4H561638F

    K4H281638O-LCCC

    Abstract: 8Mb samsung SDRAM K4H281638O
    Text: Rev. 1.0, May. 2010 K4H281638O 128Mb O-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4H281638O 128Mb 66TSOP- K4H281638O-LCCC 8Mb samsung SDRAM K4H281638O

    Untitled

    Abstract: No abstract text available
    Text: 184pin Unbuffered DIMM SERIAL PRESENCE DETECT 184pin Unbuffered DIMM SPD Specification 128Mb B-die base Rev. 0.3 June. 2000 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 PC200 PC266 Bte24 M381L1713BT1-CA0/B0/A2

    16MX8

    Abstract: 32MX72 DDR200 DDR266
    Text: 184pin Registered DIMM SERIAL PRESENCE DETECT 184pin Registered DIMM SPD Specification 128Mb B-die base Rev. 0.3 June. 2000 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M383L3313BT1-CA0/B0/A2 16MX8 32MX72

    16MX8

    Abstract: 32MX64 DDR200 DDR266 DDR333
    Text: SERIAL PRESENCE DETECT 184pin Unbuffered DIMM 184pin Unbuffered DIMM SPD Specification 128Mb C-die base Rev. 0.3 Nov. 2001 Revision 0.0 (February 2001) 1. First release for internal use only. Revision 0.1 (May 2001) 1. Byte 91 : Changed PCB revision no same as PCB revision no in Byte 85.


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    PDF 184pin 128Mb DDR333 M368L3313CT1-CA0/B0/A2/B3 32MX64 16MX8 K4H280838C-TCA0/B0/A2/B3 16MX8 32MX64 DDR200 DDR266

    k4B2G1646

    Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
    Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


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    16MX8

    Abstract: 32MX72 DDR200 DDR266 ddr266cl25
    Text: 184pin Registered DIMM SERIAL PRESENCE DETECT 184pin Registered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M383L3313BT1-CA0/B0/A2 16MX8 32MX72 ddr266cl25

    M368L1713BT1-CA0

    Abstract: 16MX64 16MX8 DDR200 DDR266
    Text: 184pin Unbuffered DIMM SERIAL PRESENCE DETECT 184pin Unbuffered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M368L1713BT1-CA0/B0/A2 M368L1713BT1-CA0 16MX64 16MX8

    ddr266

    Abstract: 16MX8 32MX64 DDR200
    Text: 184pin Unbuffered DIMM SERIAL PRESENCE DETECT 184pin Unbuffered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M368L3313BT1-CA0/B0/A2 16MX8 32MX64

    16MX8

    Abstract: DDR200 DDR266
    Text: 184pin Registered DIMM SERIAL PRESENCE DETECT 184pin Registered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M383L1713BT1-CA0/B0/A2 16MX8

    16MX8

    Abstract: DDR200 DDR266
    Text: 184pin Unbuffered DIMM SERIAL PRESENCE DETECT 184pin Unbuffered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M381L1713BT1-CA0/B0/A2 16MX8

    M312L6523DZ3

    Abstract: K4H561638J-LCCC k4h561638j K4H641638N k4h560438j K4H560838J-LCCC DDR266 DDR333 DDR400 K4H560438H
    Text: General Information DDR SDRAM DDR SDRAM Product Guide December 2007 Memory Division December 2007 General Information DDR SDRAM A. DDR SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 H X X X X X X X - X X X X Speed SAMSUNG Memory DRAM Temperature & Power


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    PDF 128Mb, 4K/64ms 256Mb, 60Ball 512Mb) 00MAX M312L6523DZ3 K4H561638J-LCCC k4h561638j K4H641638N k4h560438j K4H560838J-LCCC DDR266 DDR333 DDR400 K4H560438H

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


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    PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


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    PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    DDR200

    Abstract: 16MX64 8MX16 DDR266
    Text: 184pin Unbuffered DIMM SERIAL PRESENCE DETECT 184pin Unbuffered DIMM SPD Specification 128Mb B-die base Rev. 0.2 April. 2000 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M368L1714BT1-CA0/B0/A2 16MX64 8MX16

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


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    PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    ddr266

    Abstract: 8MX16 DDR200
    Text: 184pin Unbuffered DIMM SERIAL PRESENCE DETECT 184pin Unbuffered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M368L0914BT1-CA0/B0/A2 8MX16

    32MX72

    Abstract: DDR200 DDR266
    Text: 184pin Registered DIMM SERIAL PRESENCE DETECT 184pin Registered DIMM SPD Specification 128Mb B-die base Rev. 0.4 Jan. 2001 Revision 0.0 (December 1999) 1. First release for internal use only. Revision 0.1 (February 2000) 1. First edition for external release.


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    PDF 184pin 128Mb Byte10 DDR200 DDR266 Bte24 M383L3310BT1-CA0/B0/A2 32MX72

    K4H280838D-TCB3

    Abstract: No abstract text available
    Text: 128Mb D-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.3 Jan.31. 2001 128Mb D-die(x4/8) DDR SDRAM 128Mb D-die(x4/8) Revision History Version 0 (November, 2001) - First version for internal review Version 0.1 (December, 2001) - Changed spec. from target to preliminry


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    PDF 128Mb K4H280838D-TCB3