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    onsemi 2SA2040-TL-E

    TRANS PNP 50V 8A TP-FA
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    DigiKey 2SA2040-TL-E Digi-Reel 8,205 1
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    2SA2040-TL-E Cut Tape 8,205 1
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    TME 2SA2040-TL-E 1
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    Chip One Stop 2SA2040-TL-E Cut Tape 34
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    Chip-Germany GmbH 2SA2040-TL-E 1,268
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    ROHM Semiconductor 2SA2048KT146Q

    TRANS PNP 30V 1A SMT3
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    DigiKey 2SA2048KT146Q Digi-Reel 4,567 1
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    2SA2048KT146Q Cut Tape 4,567 1
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    2SA2048KT146Q Reel 3,000 3,000
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    Infineon Technologies AG IRF135SA204

    MOSFET N-CH 135V 160A D2PAK-7
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    DigiKey IRF135SA204 Reel 2,400 800
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    Rochester Electronics IRF135SA204 28,817 1
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    Chip One Stop IRF135SA204 Cut Tape 800
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    Swissbit SFSA2048V1BR2TO-I-MS-236-STD

    SSD 2GB SLIM-SATA SLC SATA II 5V
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    DigiKey SFSA2048V1BR2TO-I-MS-236-STD Tray 5 1
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    STMicroelectronics STEVAL-ISA204V1

    EVAL BOARD FOR PM8804
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    DigiKey STEVAL-ISA204V1 Bulk 1 1
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    Newark STEVAL-ISA204V1 Bulk 3 1
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    TME STEVAL-ISA204V1 1
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    SA204 Datasheets (63)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA204 Sino-American Silicon Products 2.0A Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF
    SA204160F35HAR CTS CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    SA204163F35HAR CTS CRYSTAL 16.3840MHZ 10PF SMD Original PDF
    SA204168F35HAR CTS CRYSTAL 16.8000MHZ 10PF SMD Original PDF
    SA204169F35HAR CTS CRYSTAL 16.9344MHZ 10PF SMD Original PDF
    SA20416EF35HAR CTS CRYSTAL 16.3676MHZ 10PF SMD Original PDF
    SA20416NF35HAR CTS CRYSTAL 16.6667MHZ 10PF SMD Original PDF
    SA204180F35HAR CTS CRYSTAL 18.0000MHZ 10PF SMD Original PDF
    SA204184F35HAR CTS CRYSTAL 18.4320MHZ 10PF SMD Original PDF
    SA204192F35HAR CTS CRYSTAL 19.2000MHZ 10PF SMD Original PDF
    SA204194F35HAR CTS CRYSTAL 19.4400MHZ 10PF SMD Original PDF
    SA204196F35HAR CTS CRYSTAL 19.6800MHZ 10PF SMD Original PDF
    SA20419BF35HAR CTS CRYSTAL 19.6608MHZ 10PF SMD Original PDF
    SA204200F35HAR CTS CRYSTAL 20.0000MHZ 10PF SMD Original PDF
    SA204204F35HAR CTS CRYSTAL 20.4800MHZ 10PF SMD Original PDF
    SA204207F35HAR CTS CRYSTAL 20.7360MHZ 10PF SMD Original PDF
    SA204221F35HAR CTS CRYSTAL 22.1184MHZ 10PF SMD Original PDF
    SA204225F35HAR CTS CRYSTAL 22.5792MHZ 10PF SMD Original PDF
    SA204240F35HAR CTS CRYSTAL 24.0000MHZ 10PF SMD Original PDF
    SA204243F35HAR CTS CRYSTAL 24.3050MHZ 10PF SMD Original PDF

    SA204 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


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    S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    W78M32V-XBX 8Mx32 120ns 13x22mm PDF

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL PDF

    10001000XXX

    Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
    Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 PDF

    SA158

    Abstract: SA214 8adrr
    Text: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡


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    S29PL127H SA158 SA214 8adrr PDF

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


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    S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


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    MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212 PDF

    10001XXXXX

    Abstract: No abstract text available
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29PL-J 16-Bit) S29PL-J 10001XXXXX PDF

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


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    IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE PDF

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 PDF

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N PDF

    HPPB

    Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
    Text: MBM29QM12DH -60 データシート 生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。


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    MBM29QM12DH MBM29QM12DH DS05-20909-2 DS05-20909-2 HPPB DS05 FPT-56P-M01 MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97 PDF

    S29WS128J-MCP

    Abstract: S29WS128J S29WS-J S29WS064J
    Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    S29WS-J 16-Bit) S29WS-J S29WS128J-MCP S29WS128J S29WS064J PDF

    ns032j0lbjw00

    Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
    Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29NS-J 16-Bit) S29NS-J ns032j0lbjw00 B6 3308 S29NS032J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00 PDF

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29LV2562M 120R C8800 PDF

    CX20493-58

    Abstract: FBMA-L11-201209-221LMA30T alviso-GM SN51100 FW82801FBM CX20468 lg r40 MOTHERBOARD CIRCUIT diagram motherboard fw82801fbm DIAGRAM CIRCUIT 3361P usb to sata ckt diagram
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Dothan uFCPGA with Intel Alviso_GM+ICH6-M core logic 2006-09-15 3 3 REV:1.0 4 4 Title Compal Electronics, Inc. Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINSSize


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    Sep08/16 LA-3361 CX20493-58 FBMA-L11-201209-221LMA30T alviso-GM SN51100 FW82801FBM CX20468 lg r40 MOTHERBOARD CIRCUIT diagram motherboard fw82801fbm DIAGRAM CIRCUIT 3361P usb to sata ckt diagram PDF