torque
Abstract: delta phase angle SA10S20N SA10S20N-001 GCM2
Text: SA10S20N-001 Specifications ITEMS UNIT SA10S20N-001 Step Angle Degree 18 Number of Phase Phase 4 Drive System - Bipolar Voltage V 5 Winding Resistance Ohm 20 Detent Torque g-cm 3 Holding Torque g-cm 20 Rotor Inertia g-cm2 0.03 Weight g Approximately 5 Characteristics
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SA10S20N-001
torque
delta
phase angle
SA10S20N
SA10S20N-001
GCM2
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w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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nec 765 fdc
Abstract: W83877ATF W83877AF W83877F PC97 RECS-80 APM 2510 irsl200 NEC marking 8215 date code
Text: W83877ATF WINBOND I/O W83877ATF Data Sheet Revision History Pages Dates Version 1 n.a. 07/29/97 0.50 2 1,3,6,49,50,98,140, 141,142,170 04/10/98 0.51 Version on Web Main Contents First published. A1 Typo correction and data calibrated 3 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All
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W83877ATF
W83877ATF
nec 765 fdc
W83877AF
W83877F
PC97
RECS-80
APM 2510
irsl200
NEC marking 8215 date code
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LM320A
Abstract: SD13 SD14 SD15 SN74LV4320A SN74LV4320AGKFR A10-A00 D07-D00 SCE1
Text: SN74LV4320A LOWĆPOWER, DUALĆSUPPLY, LEVELĆTRANSLATING CompactFlash INTERFACE WITH 16ĆBIT DATA, 11ĆBIT ADDRESS, AND 13ĆBIT CONTROL LINES SCES628 − APRIL 2005 D Member of the Texas Instruments D D D D D Ioff Supports Partial-Power-Down Mode Widebus+ Family
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SN74LV4320A
16BIT
11BIT
13BIT
SCES628
15-kV
IEC61000-4-2,
LM320A
SD13
SD14
SD15
SN74LV4320A
SN74LV4320AGKFR
A10-A00
D07-D00
SCE1
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL16x4D
M410000002
DL161
DL162
DL163
m410000009
AM29DL164DT
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CA 324G
Abstract: DL322 DL323 DL324
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
CA 324G
DL322
DL323
DL324
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DL161
Abstract: DL162 DL163 AM29DL164DT M4200
Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am42DL16x2D
FLA069--69-Ball
DL161
DL162
DL163
AM29DL164DT
M4200
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A29L320ATV-70F
Abstract: 48pin flash programmer circuit 48pin TSOP A29L320ATV A29L320AUV-70UF A29L320ATV-70UF A29L320AUG-70F A29L320A
Text: A29L320A Series 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue April 12, 2006
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A29L320A
48TFBGA)
A29L320ATV-70F
48pin flash programmer circuit
48pin TSOP
A29L320ATV
A29L320AUV-70UF
A29L320ATV-70UF
A29L320AUG-70F
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AMD marking CODE flash AM29DL323DB
Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Text: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.
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Am29DL322D/323D/324D
S29JL032H
Am29DL32xD
S29PL032J
AMD marking CODE flash AM29DL323DB
56-Pin
S29JL032
DL322
DL323
DL324
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DL162
Abstract: DL163
Text: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Preliminary Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 History Issue Date Initial issue
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A29DL16x
16-Bit)
48TFBGA)
DL162
DL163
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Untitled
Abstract: No abstract text available
Text: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit
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A82DL16x4T
Bit/1Mx16
256Kx16
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DL162
Abstract: DL163
Text: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xC
16-Bit)
FBC048.
DL162
DL163
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EN29SL160
Abstract: cFeon EN
Text: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all
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EN29SL160
EN29SL160
cFeon EN
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ns032j0lbjw00
Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
ns032j0lbjw00
B6 3308
S29NS032J
VDC048
VDE044
LF35
Am29N643
NS064J0LBJW00
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DL322
Abstract: DL323 DL324 M41000002R
Text: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL32x8G
DL322
DL323
DL324
M41000002R
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DL322
Abstract: DL323 DL324
Text: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am49DL32xBG
DL322
DL323
DL324
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SA20S
Abstract: SA20 SAI25S SA20S2 SA-20 SA10 SA14 SA14S2 34000
Text: ì Non Adjustable Shock Absorbers Series SAIO SA10S S A I2 SA14 SA14S SA14S2 SA20 SA20S SA20S2 SAI25 SAI25S SAI25S2 Impact speeds 0.3 - 4.5 m /s 0.15 - 2.2 m /s for SA10 Series Operating Temperature Range -4 0 - +82°c ( - 1 0 - +70°c for SA 10 Series)
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SA14S2
SA20S
SA20S2
SAI25
SAI25S
SAI25S2
SA20
SA-20
SA10
SA14
34000
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L323C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL32xC
16-Bit)
29DL32xC
L323C
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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GC102
Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
Text: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support
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377747S
12/16MHZ
16MHz
12MHz
GC101/GC102
16MHz.
/RAS40
/RAS6080
RAS40
GC102
8088 motherboard schematics
ASC 8.000MHz crystal oscillator
cpu 416-2 DP
CQA03
coa030
sd 7406
ero 1818
74ALS245
TI HA 7406
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MAKING CODE 1H sod
Abstract: No abstract text available
Text: TMS34094 ISA BUS INTERFACE S PV S 006A - FEBRUARY 1992 - REVISED JUNE 1992 • Simplifies Design of High-Performance ISA PC Graphics Systems • Single-Integrated Circuit Interfaces TMS34020 to ISA Bus • Conforms to ISA Portions of the EISA Rev. 3.11 Specifications
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TMS34094
TMS34020
16-Bit
160-PIN
MAKING CODE 1H sod
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Untitled
Abstract: No abstract text available
Text: TMS34094 ISA BUS INTERFACE S P V S 0 0 6 A -F E B R U A R Y 1 9 9 2 - R E V IS E D JU NE 1992 160-PIN PC PLASTIC QUAD-FLAT PACKAGE EIAJ (TOP VIEW) Simplifies Design of High-Performance ISA PC Graphics Systems 160 Single-Integrated Circuit Interfaces TMS34020 to ISA Bus
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TMS34094
160-PIN
TMS34020
16-Bit
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — M inimizes system level power requirem ents ■ M anufactured on 0.35|xm process technology
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Am29F080B
40-pin
29F080
44-pin
29F080B
16-038-TSOP-1
TSR040â
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