DL2032
Abstract: Duracell DL2032 DL2450 duracell cr2450 duracell CR2025 DL2025 DL2016 dl2025 cr2032 duracell CR2032 DL2430
Text: Lithium Coin Battery Duracell Batteries Lithium Duracell IEC ANSI Voltage Overall Ht.(MM) DL1025 DL1216 DL1616 DL1620 DL2016 DL2025 DL2032 DL2430 DL2450 CR1616 CR1620 CR2016 CR2025 CR2032 CR2430 CR2450 5009LC 5000LC 5003LC 5004LC 5011LC 5029LC 3.0 3.0 3.0
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DL1025
DL1216
DL1616
DL1620
DL2016
DL2025
DL2032
DL2430
DL2450
CR1616
DL2032
Duracell DL2032
DL2450
duracell cr2450
duracell CR2025
DL2025
DL2016
dl2025 cr2032
duracell CR2032
DL2430
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL16x4D
M410000002
DL161
DL162
DL163
m410000009
AM29DL164DT
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DL161
Abstract: DL162 DL163 AM29DL164DT M4200
Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am42DL16x2D
FLA069--69-Ball
DL161
DL162
DL163
AM29DL164DT
M4200
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DL162
Abstract: DL163
Text: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Preliminary Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 History Issue Date Initial issue
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A29DL16x
16-Bit)
48TFBGA)
DL162
DL163
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Untitled
Abstract: No abstract text available
Text: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit
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A82DL16x4T
Bit/1Mx16
256Kx16
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DL162
Abstract: DL163
Text: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xC
16-Bit)
FBC048.
DL162
DL163
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A82DL1632TG-70UF
Abstract: DL1632
Text: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit
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A82DL16x2T
Bit/1Mx16
128Kx16
MO-219
A82DL1632TG-70UF
DL1632
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164D48
Abstract: DL162 DL163 D163D
Text: DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL162D/163D/164D
16-Bit)
Am29DL16xC
Am29DL16xD
164D48
DL162
DL163
D163D
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S29JL032
Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Text: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.
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Am29DL16xD
S29JL032H
S29PL032J
S29PL-J
21533E6
S29JL032
DL161
DL162
DL163
D162DT90
D163DB70
D164DB70
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Am29 Flash Family
Abstract: AM29 FLASH AMD 2m flash memory
Text: Simultaneous Read/Write Flash FAQ TECHNOLOGY • How does it work? À While one bank of the device is engaged in a write or erase operation, the other bank of the device can simultaneously send code to the system, significantly improving system performance.
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Untitled
Abstract: No abstract text available
Text: Conventional Rectiier Power Transformers Chassis Mount SM Signal’s rectifier power transformers provide a wide variety of outputs. This series of conservatively designed transformers is manufactured using traditional materials and layer wound techniques.
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115/230V
80VCT
40VCT
105/115/125V;
115/230V
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DL802
Abstract: DL246 80VCT DL1050 36VCT 18VCT
Text: Conventional Rectifier Power Transformers • Chassis Mount SM Signal’s Rectifier Power transformers provide a wide variety of outputs. This series of conservatively designed transformers are manufactured using traditional materials and layer wound techniques.
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1500VRMS
105/115/125V;
115/230V
24hrs)
DL802
DL246
80VCT
DL1050
36VCT
18VCT
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Untitled
Abstract: No abstract text available
Text: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit
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A82DL16x2T
Bit/1Mx16
128Kx16
MO-219
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A29DL163UV70F
Abstract: No abstract text available
Text: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue
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A29DL16x
16-Bit)
48TFBGA)
A29DL163UV70F
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Untitled
Abstract: No abstract text available
Text: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit
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A82DL16x2T
Bit/1Mx16
128Kx16
MO-219
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emcp 162
Abstract: DL10 DL12 emcp TEA 2111 WT111 eMCP qualification dh29 code
Text: WC64P603EV-XQ3X RISC 603e MODULE, SECONDARY L2 CACHE ADVANCED * MAIN FEATURES • Based on RISC 603e 3.3V Microprocessor ■ Processor Clock Frequencies: 66.6, 80, 100 MHz ■ Footprint compatible with 603e µp CQFP package ■ Bus Clock Frequencies: Up to 66.6 MHz
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WC64P603EV-XQ3X
32-bit
Bus/64-bit
16KByte
512KByte
64Kx72)
Packaging240
P603E
240-Pin
emcp 162
DL10
DL12
emcp
TEA 2111
WT111
eMCP qualification
dh29 code
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL162C/Am29DL163C
16-Bit)
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DL161
Abstract: DL162 DL163
Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am42DL16x2D
Num58
Am42DL1642D
DL161
DL162
DL163
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Duracell
Abstract: CR1620 DLI620
Text: DURACELL SIZE DL1620 CR1620 Lithium Manganese Dioxide Battery SPECIFICATIONS Min. No Load Voltage 3.1V Min. On Load Voltage 2.1V on 150Q at 1s Rated Capacity 70mAh on 30k Q to 2V Min. Life 180Hrs on 6.8k Q to 2V Volume 0.4cm3 Weight 1.3g Typical Discharge
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DLI620
CR1620
70mAh
180Hrson
Duracell
CR1620
DLI620
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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TLBI
Abstract: No abstract text available
Text: C 3 WC64P603EV-XQ3X WHITE /MICROELECTRONICS RISC 603e M ODULE, SECONDARY L2 CACHE ADVANCED * MAI N FEATURES • Based on R IS C 6 0 3 e 3 .3 V M icro p ro cessor ■ Footprint com patible w ith 603e [jp C Q FP package ■ ■ Processor C lo ck Frequencies: 66.6, 8 0 ,1 0 0 M Hz
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WC64P603EV-XQ3X
32-bit
Bus/64-bit
16KByte
240-Pin
80MHz
100MHz
TLBI
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.
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Am29DL16xC
16-Bit)
20-year
FBC048.
40-pin
29DL16xC
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