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    SA 673 SEMICONDUCTOR Search Results

    SA 673 SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SA 673 SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    572B-T160L

    Abstract: B2329 ABB B45 BB342
    Text: MLX75411, MLX75412 Avocet HDR Image Sensors Datasheet Application Examples Features and Benefits 1 1 1 1 1 1 1 1 1 1 1 Automotive Driver Assistance Systems ADAS 1 Lane departure warning (LDW) 1 Forward collision warning (FCW) 1 Automatic high-beam assist


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    MLX75411, MLX75412 154dB 1024x512 ISO14001 Jun/11 572B-T160L B2329 ABB B45 BB342 PDF

    ic08k

    Abstract: LTC1417 serial and parallel Analog to digital converter LTC1096 LTC1096L LTC1098 LTC1098L LTC1099 LTC1196 LTC1198
    Text: Data Conversion InfoCard 8 Analog-to-Digital Converters Analog-to-Digital Converters Parallel Serial Single 8-Bit LTC1096 5V, Micropower, SO-8 LTC1096L 3V, Micropower, SO-8 LTC1196 3V to 5V, 1Msps, SO-8 10-Bit LTC1092 5V, 38ksps LTC1197 5V, 500ksps, SO-8 LTC1197L 3V, 250ksps, MSOP


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    LTC1096 LTC1096L LTC1196 10-Bit LTC1092 38ksps LTC1197 500ksps, LTC1197L 250ksps, ic08k LTC1417 serial and parallel Analog to digital converter LTC1098 LTC1098L LTC1099 LTC1198 PDF

    sla 4051

    Abstract: Philips PCF8833 mv silicon c320 sla 4052 140668 601330 C3657 intel 8951 MX C339 Philips ID33
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8833 STN RGB - 132 x 132 × 3 driver Objective specification 2003 Feb 14 Philips Semiconductors Objective specification STN RGB - 132 × 132 × 3 driver PCF8833 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION


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    PCF8833 SCA75 403512/01/pp112 sla 4051 Philips PCF8833 mv silicon c320 sla 4052 140668 601330 C3657 intel 8951 MX C339 Philips ID33 PDF

    HCTS393DMSR

    Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS
    Text: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


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    HCTS393MS MIL-STD-1835 CDIP2-T14 05A/cm2 HCTS393 TA14490A. HCTS393DMSR HCTS393HMSR HCTS393KMSR HCTS393MS PDF

    HCTS393D

    Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS HCTS393DMSR
    Text: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


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    HCTS393MS MIL-STD-1835 CDIP2-T14 05A/cm2 HCTS393 TA14490A. HCTS393D HCTS393HMSR HCTS393KMSR HCTS393MS HCTS393DMSR PDF

    PMBFJ111

    Abstract: PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472
    Text: b b S B ' m 0024052 TÔT * A P X Philips Semiconductors PMBFJ111/PMBFJ112/ PMBFJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE PINNING - SOT23 PIN CONFIGURATION FEATURES b?E 1> DESCRIPTION


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    PMBFJ111/PMBFJ112/ PMBFJ113 PMBFJ111) MBB114 PMBFJ112) PMBFJ113) DD54DSS PMBFJ111/PMBFJ112/PMBFJ113 PMBFJ111 PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472 PDF

    SG3524AN

    Abstract: an170 philips TCA280 NE 555 timer TDA1543A MC 1310 stereo decoder fsk generator using timer 555 LM 272 dual op amp NE5080 application tda1541
    Text: Philips Semiconductors Functional Index General-Purpose/Linear ICs Preface. Section 1 General Information .


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BR2505 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. BR2510 T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE RANGE - 5 0 to 1000 Volts CURRENT - 25 Amperes FEATURES


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    BR2505 BR2510 ratings-400 IL-STD-202E, BR2505 PDF

    TSM 1416

    Abstract: TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691
    Text: b t .S a ' ìa i Philips Semiconductors 0024774 _ T i b • APX Product specification NPN 2 GHz wideband transistor BFG16A N APIER P H I L I P S / D I S C R E T E FEATURES b?E D PINNING • High power gain PIN DESCRIPTION • Good thermal stability


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    G024774 BFG16A OT223 OT223. TSM 1416 TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691 PDF

    4910E

    Abstract: MGF4914E MGF4918E
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to


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    F4910E 4910E MGF4914E MGF4918E PDF

    PMBFJ111

    Abstract: No abstract text available
    Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23


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    0024DS2 J111/P J112/ FJ113 PMBFJ111) PMBFJ112) PMBFJ113) DD24D55 PMBFJ111/PMBFJ112/PMBFJ113 PMBFJ111 PDF

    CY7C167

    Abstract: CY7C167-25DC i781 7C167
    Text: CYPRESS SE MI CONDUCT OR 250^2 MfciE D oodbM^ i acYP CY7CX67 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected CMOS for optimum speed/power High speed • — 25 ns Low active power — 275 mW Low standby power — 83 m ff


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    CY7C167 CY7C167 CY7C167-45DC CY7C167-45LC CY7C167-45VC CY7C167-45DMB CY7C167-45LMB T-46-23-05 CY7C167-25DC i781 7C167 PDF

    CMOS Gilbert Cell Mixer

    Abstract: SA636 gilbert cell mixer hartley oscillator SA636DK NE605 SA636D 10.7mhz crystal oscillator gilbert mixer
    Text: b 7E D NAPC/PHILIPS SEflICON» W t bbSa^EM □ □ flè 'ìS l Qb4 • S I C 3 Philips Semiconductors RF Communications Products Objective specification Low voltage high performance mixer FM IF system with high-speed RSSI DESCRIPTION FEATURES The SA636 is a low-voltage high performance


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    SA636 20-lead 600kHz. RCR-28 20log CMOS Gilbert Cell Mixer gilbert cell mixer hartley oscillator SA636DK NE605 SA636D 10.7mhz crystal oscillator gilbert mixer PDF

    1999Volts

    Abstract: No abstract text available
    Text: * PHILIPS E C G INC ECG Semiconductors 17E • ECG2052 CM OS 3Vz Digit DVM with Multiplexed 7-Segment Output Features • Operates from single 5 V supply


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    bb5312fl ECG2052 ECG2052 Li53Tafl 00GSL 1999Volts PDF

    LF386

    Abstract: lf396 100 6n capacitor lf296 LF396A LF198 LF198A LF298 LF398 LF398A
    Text: THOMSON SEMICONDUCTORS LF198, LF198A LF298 LF398, LF398A J-FET SAM PLE A N D HOLD CIRCUITS T h e LF198, LF298, L F 3 9 8 a re m o n o lith ic sa m p le a n d h o ld c irc u its w h ic h u tilize J -F E T te c h n o lo g y to o b ta in ultra h igh d c a ccuracy w ith fa s t a c q u isitio n o f signal


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    LF198, LF198A LF298 LF398, LF398A LF298, LF398are LF198 LF386 lf396 100 6n capacitor lf296 LF396A LF198A LF398 LF398A PDF

    U0100

    Abstract: No abstract text available
    Text: 4bE D • b 7 2 M 2 4 Q D D 1 G D 2 M 124 H O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor 7 MSM28C64A_ T - y ^ / i 8K x 8 BIT C M O S ELEC TR ICA LLY ERA SA B LE & P R O G R A M A B LE ROM G EN ER A L DESCRIPTION The MSM28C64ARS is a CMOS electrically erasable and programmable read only memory


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    MSM28C64A_ MSM28C64ARS 312ps/byte. MSM28C64A T-46-13-27 MSM28C64A U0100 PDF

    MCE Semiconductor

    Abstract: No abstract text available
    Text: KS82C88A MICROPROCESSOR BUS CONTROLLER FEATURES/BENEFITS DESCRIPTION • Pin and functional compatibility with the Industry standard 8288 The KS82C88A Bus Controller is a 20-pin CMOS compo­ nent which includes command and control timing generation as well as a bipolar bus drive capability while


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    KS82C88A 10MHz KS82C88A 20-pin 82C88A 10MHz MCE Semiconductor PDF

    2ss9014

    Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
    Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013


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    71b4142 SS9012 825mW) -500mA) SS9013 Breakdo4142 SS9014 fe-14 1-10C 2ss9014 ss8015 A 671 transistor SS9013 U007 transistor ss9014 T-31-21 50nr PDF

    diode s4 6d

    Abstract: No abstract text available
    Text: S A M S U N G S E M I C O N D U C T O R INC 05 KS54HCTLS C O A KS74HCTLS D E § 7 ci b m M a PD0hS3D Octal D-Type Flip-Flops with 3-State Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with S4/74LS logic family • Low power consumption characteristic ot CMOS


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    KS54HCTLS KS74HCTLS S4/74LS KS74HCTLS: KS54HCTLS: 300-mil 7Tb414S 90-XO 14-Pin diode s4 6d PDF

    Untitled

    Abstract: No abstract text available
    Text: 6A Adjustable, and Fixed 33V and 5V Linear Regulators D e scrip tio n The CS5206 -X series of linear regu­ lators provides 6A at adjustable and fixed voltages of 3.3V and 5V with an accuracy of ±1% and ±2% respectively. The adjustable version uses tw o external resistors to set


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    CS5206 T0-220 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.


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    MSM51V16400 304-Word MSM51V16400 cycles/64m BME40 PDF

    T2D 96 diode

    Abstract: SAA7350GP philips saa7350gp SAA7350 T2D DIODE T2D DIODE 49 T2D 98 DIODE T2D 65 DIODE T2D DIODE 42 T2D DIODE 96
    Text: P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n 20-bit input bitstream conversion DAC for digital audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface form ats Japanese and l2S • Choice of two system clock


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    20-bit SAA7350 TDA1547 SAA7350 2896MHz 9344MHz T2D 96 diode SAA7350GP philips saa7350gp T2D DIODE T2D DIODE 49 T2D 98 DIODE T2D 65 DIODE T2D DIODE 42 T2D DIODE 96 PDF

    Lo 3.3V

    Abstract: No abstract text available
    Text: Philips S em iconductors P relim inary specification 9-bit D-type flip-flop with 5-volt tolerant inputs/outputs; positive-edge trigger 3-State 74LVC823A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC823A is a high performance, low-power, low-voltage


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    74LVC823A 74LVC823A SA00423 Lo 3.3V PDF

    SAA7350

    Abstract: SAA7350GP SAA1350 philips saa7350gp A17A CAA79 TDA1547 SD12
    Text: philips Semiconductors Preliminary Specification 20-bit input bitstream conversion PAC for digitai audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface formats Japanese and l2S • Choice of two system clock frequencies • Sampling frequency from 16 kHz


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    20-bit SAA7350 TDA1547 SAA7350 SAA7350GP SAA1350 philips saa7350gp A17A CAA79 TDA1547 SD12 PDF