SUP53P06-20
Abstract: SUP53
Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT
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SUP53P06-20
O-220AB
SUP53P06-20-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUP53P06-20
SUP53
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Si4459ADY
Abstract: No abstract text available
Text: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested
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Si4459ADY
Si4459ADY-T1-GE3
150ed
08-Apr-05
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Si3483CDV
Abstract: Si3483CDV-T1-E3
Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch
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Si3483CDV
Si3483CDV-T1-E3
08-Apr-05
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SUP53P06-20
Abstract: No abstract text available
Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT
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SUP53P06-20
O-220AB
SUP53P06-20-E3
18-Jul-08
SUP53P06-20
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Si7611DN-T1-GE3
Abstract: No abstract text available
Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7611DN
Si7611DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7611DN
Si7611DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested
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Si4459ADY
Si4459ADY-T1-GE3
11-Mar-11
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SUP53P06-20
Abstract: SUP53P06-20-E3 SUP53P06
Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT
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SUP53P06-20
O-220AB
SUP53P06-20-E3
08-Apr-05
SUP53P06-20
SUP53P06-20-E3
SUP53P06
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Si4126DY
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
150electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI9926CD
Abstract: No abstract text available
Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS
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Si9926CDY
Si9926CDY-T1-E3
18-Jul-08
SI9926CD
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS
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Si4124DY
Si4124DY-T1-E3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
11-Mar-11
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SI3483CDV
Abstract: Si3483CDV-T1-E3
Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch
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Si3483CDV
Si3483CDV-T1-E3
18-Jul-08
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DG2747
Abstract: vishay siliconix code marking DG2748 JESD78 marking 2748 DG2747DN
Text: DG2747/DG2748/DG2749 Vishay Siliconix 0.4-Ω, Low Voltage, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2747, DG2748, and DG2749 are high performance, low on-resistance analog switches of dual SPST configuration. • Wide operation voltage range: 1.6 V to 4.3 V
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DG2747/DG2748/DG2749
DG2747,
DG2748,
DG2749
JESD78
DG2747/2748/2749
18-Jul-08
DG2747
vishay siliconix code marking
DG2748
JESD78
marking 2748
DG2747DN
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Si3457CDV
Abstract: Si3457CDV-T1-E3
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT
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Si3457CDV
Si3457CDV-T1-E3
08-Apr-05
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6860-1
Abstract: SI-4124 16a55
Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS
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Si4124DY
Si4124DY-T1-E3
08-Apr-05
6860-1
SI-4124
16a55
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si4126
Abstract: Si4126DY 265b S8089
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
11-Mar-11
si4126
265b
S8089
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Si7994DP
Abstract: si7994
Text: New Product Si7994DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0056 at VGS = 10 V 60 0.007 at VGS = 4.5 V 60 VDS (V) 30 • Halogen-free Qg (Typ.) • TrenchFET Power MOSFET APPLICATIONS • System Power DC/DC
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Si7994DP
Si7994DP-T1-GE3
08-Apr-05
si7994
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Si7611DN-T1-GE3
Abstract: No abstract text available
Text: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7611DN
Si7611DN-T1-GE3
08-Apr-05
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Si9926CDY
Abstract: SI9926CDY-T1-E3 8089-2 SI9926CD
Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS
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Si9926CDY
Si9926CDY-T1-E3
08-Apr-05
8089-2
SI9926CD
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S-80894-Rev
Abstract: Si3457CDV Si3457CDV-T1-E3
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT
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Si3457CDV
Si3457CDV-T1-E3
18-Jul-08
S-80894-Rev
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SUP53P06-20
Abstract: SUP53P06
Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT
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SUP53P06-20
O-220AB
SUP53P06-20-E3
11-Mar-11
SUP53P06-20
SUP53P06
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PDF
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